Takayuki Kubo

Person

Osaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Process for producing silicon single crystal
- Patent number 7,628,854
- Issue date Dec 8, 2009
- Sumco Corporation
- Toshiaki Ono
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal, silicon wafer, and epitaxial wafer
- Patent number 6,878,451
- Issue date Apr 12, 2005
- Sumitomo Mitsubishi Silicon Corporation
- Eiichi Asayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal growth method
- Patent number 6,767,400
- Issue date Jul 27, 2004
- Sumitomo Mitsubishi Silicon Corporation
- Takayuki Kubo
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal growth apparatus
- Patent number 6,764,547
- Issue date Jul 20, 2004
- Sumitomo Mitsubishi Silicon Corporation
- Takayuki Kubo
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal growing apparatus
- Patent number 6,740,160
- Issue date May 25, 2004
- Sumitomo Mitsubishi Silicon Corporation
- Takayuki Kubo
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Production device for high-quality silicon single crystals
- Patent number 6,702,892
- Issue date Mar 9, 2004
- Sumitomo Mitsubishi Silicon Corporation
- Masahiko Okui
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Single crystal pulling apparatus
- Patent number 6,689,213
- Issue date Feb 10, 2004
- Sumitomo Mitsubishi Silicon Corporation
- Takayuki Kubo
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
High-quality silicon single crystal and method of producing the same
- Patent number 6,514,335
- Issue date Feb 4, 2003
- Sumitomo Metal Industries, Ltd.
- Kazuyuki Egashira
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a single crystal silicon
- Patent number 6,468,881
- Issue date Oct 22, 2002
- Sumitomo Metal Industries, Ltd.
- Takayuki Kubo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal pull-up apparatus
- Patent number 6,338,757
- Issue date Jan 15, 2002
- Sumitomo Metal Industries, Ltd.
- Manabu Nishimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing crystals
- Patent number 5,840,116
- Issue date Nov 24, 1998
- Sumitomo Sitix Corporation
- Takayuki Kubo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing silison single crystal
- Patent number 5,477,806
- Issue date Dec 26, 1995
- Sumitomo Sitix Corporation
- Yoshihiro Akashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing crystal
- Patent number 5,402,747
- Issue date Apr 4, 1995
- Sumitomo Metal Industries, Ltd.
- Sumio Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method of growing single crystal
- Patent number 5,363,796
- Issue date Nov 15, 1994
- Sumitomo Metal Industries, Ltd.
- Sumio Kobayashi
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Process for producing silicon single crystal
- Publication number 20070017434
- Publication date Jan 25, 2007
- SUMCO CORPORATION
- Toshiaki Ono
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of making an epitaxial wafer
- Publication number 20040216659
- Publication date Nov 4, 2004
- Eiichi Asayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growing apparatus
- Publication number 20030183163
- Publication date Oct 2, 2003
- Takayuki Kubo
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal, silicon wafer, and epitaxial wafer
- Publication number 20030175532
- Publication date Sep 18, 2003
- Sumitomo Metal Industries, Ltd.
- Eiichi Asayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growth method
- Publication number 20030150373
- Publication date Aug 14, 2003
- Takayuki Kubo
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growth apparatus
- Publication number 20030051661
- Publication date Mar 20, 2003
- Takayuki Kubo
- C30 - CRYSTAL GROWTH
Information Patent Application
Single crystal pulling apparatus
- Publication number 20020170492
- Publication date Nov 21, 2002
- Takayuki Kubo
- C30 - CRYSTAL GROWTH
Information Patent Application
production device for high-quality silicon single crystals
- Publication number 20020139298
- Publication date Oct 3, 2002
- Masahiko Okui
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal, silicon wafer, and epitaxial wafer
- Publication number 20020142171
- Publication date Oct 3, 2002
- SUMITOMO METAL INDUSTRIES, LTD.
- Eiichi Asayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal, silicon wafer, and epitaxial wafer
- Publication number 20020142170
- Publication date Oct 3, 2002
- SUMITOMO METAL INDUSTRIES, LTD.
- Eiichi Asayama
- C30 - CRYSTAL GROWTH

Takayuki Kubo

Person

Patents Grantslast 30 patents

Process for producing silicon single crystal

Silicon single crystal, silicon wafer, and epitaxial wafer

Crystal growth method

Crystal growth apparatus

Crystal growing apparatus

Production device for high-quality silicon single crystals

Single crystal pulling apparatus

High-quality silicon single crystal and method of producing the same

Method for producing a single crystal silicon

Single crystal pull-up apparatus

Method of growing crystals

Method of producing silison single crystal

Method of growing crystal

Apparatus and method of growing single crystal

Patents Applicationslast 30 patents

Process for producing silicon single crystal

Method of making an epitaxial wafer

Crystal growing apparatus

Silicon single crystal, silicon wafer, and epitaxial wafer

Crystal growth method

Crystal growth apparatus

Single crystal pulling apparatus

production device for high-quality silicon single crystals

Silicon single crystal, silicon wafer, and epitaxial wafer

Silicon single crystal, silicon wafer, and epitaxial wafer