Takeo Yamamoto

Person

Nishikamo-gun, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and electronic component using the same
- Patent number 9,997,432
- Issue date Jun 12, 2018
- Denso Corporation
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 8,440,524
- Issue date May 14, 2013
- Toyota Jidosha Kabushiki Kaisha
- Hirokazu Fujiwara
- C21 - METALLURGY OF IRON
Information Patent Grant
SiC semiconductor device having Schottky barrier diode and method f...
- Patent number 8,436,365
- Issue date May 7, 2013
- Denso Corporation
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with Schottky barrier diode an...
- Patent number 8,324,704
- Issue date Dec 4, 2012
- Denso Corporation
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device making method
- Patent number 8,168,485
- Issue date May 1, 2012
- Denso Corporation
- Takeshi Endo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming impurity regions in silicon carbide devices
- Patent number 8,163,637
- Issue date Apr 24, 2012
- Toyota Jidosha Kabushiki Kaisha
- Masaki Konishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device having outer periphery structure
- Patent number 7,915,705
- Issue date Mar 29, 2011
- Denso Corporation
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device having junction barrier Schott...
- Patent number 7,893,467
- Issue date Feb 22, 2011
- Denso Corporation
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SIC semiconductor having junction barrier Schottky diode
- Patent number 7,863,682
- Issue date Jan 4, 2011
- Denso Corporation
- Eiichi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device
- Patent number 7,855,131
- Issue date Dec 21, 2010
- Toyota Jidosha Kabushiki Kaisha
- Hirokazu Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device having junction barrier schott...
- Patent number 7,851,882
- Issue date Dec 14, 2010
- Denso Corporation
- Eiichi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silcon carbide semiconductor device having schottky barrier diode a...
- Patent number 7,838,888
- Issue date Nov 23, 2010
- Denso Corporation
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making silicon carbide semiconductor device having multi-...
- Patent number 7,825,017
- Issue date Nov 2, 2010
- Denso Corporation
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor having junction barrier schottky device
- Patent number 7,816,733
- Issue date Oct 19, 2010
- Denso Corporation
- Eiichi Okuno
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC COMPONENT USING THE SAME
- Publication number 20170213778
- Publication date Jul 27, 2017
- Denso Corporation
- Takeo YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARRIER DIODE AND METHOD F...
- Publication number 20110204383
- Publication date Aug 25, 2011
- DENSO CORPORATION
- Takeo YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURIING METHOD
- Publication number 20110207321
- Publication date Aug 25, 2011
- Toyota Jidosha Kabushiki Kaisha
- Hirokazu FUJIWARA
- C21 - METALLURGY OF IRON
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20110151654
- Publication date Jun 23, 2011
- Toyota Jidosha Kabushiki Kaisha
- Masaki KONISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device with schottky barrier diode an...
- Publication number 20100244049
- Publication date Sep 30, 2010
- DENSO CORPORATION
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of making the same
- Publication number 20100032730
- Publication date Feb 11, 2010
- DENSO CORPORATION
- Takeshi Endo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method of a semiconductor device
- Publication number 20090269908
- Publication date Oct 29, 2009
- Toyota Jidosha Kabushiki Kaisha
- Hirokazu Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method of the same
- Publication number 20090267082
- Publication date Oct 29, 2009
- DENSO CORPORATION
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20090236611
- Publication date Sep 24, 2009
- DENSO CORPORATION
- Takeo YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode having Schottky junction and PN junction and method for manuf...
- Publication number 20090230405
- Publication date Sep 17, 2009
- DENSO CORPORATION
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode
- Publication number 20090224353
- Publication date Sep 10, 2009
- DENSO CORPORATION
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device having junction barrier schott...
- Publication number 20090008651
- Publication date Jan 8, 2009
- DENSO CORPORATION
- Eiichi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device having junction barrier schott...
- Publication number 20080296587
- Publication date Dec 4, 2008
- DENSO CORPORATION
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC semiconductor having junction barrier Schottky device
- Publication number 20080277669
- Publication date Nov 13, 2008
- DENSO CORPORATION
- Eiichi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIS semiconductor having junction barrier schottky device
- Publication number 20080277668
- Publication date Nov 13, 2008
- DENSO CORPORATION
- Eiichi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silcon carbide semiconductor device having schottky barrier diode a...
- Publication number 20080258153
- Publication date Oct 23, 2008
- DENSO CORPORATION
- Takeo YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC semiconductor device having outer periphery structure
- Publication number 20080258152
- Publication date Oct 23, 2008
- DENSO CORPORATION
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having SiC substrate and method for manufactur...
- Publication number 20060273323
- Publication date Dec 7, 2006
- DENSO CORPORATION
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS

Takeo Yamamoto

Person

Patents Grantslast 30 patents

Semiconductor device and electronic component using the same

Semiconductor device manufacturing method

SiC semiconductor device having Schottky barrier diode and method f...

Silicon carbide semiconductor device with Schottky barrier diode an...

Semiconductor device making method

Forming impurity regions in silicon carbide devices

SiC semiconductor device having outer periphery structure

Silicon carbide semiconductor device having junction barrier Schott...

SIC semiconductor having junction barrier Schottky diode

Manufacturing method of a semiconductor device

Silicon carbide semiconductor device having junction barrier schott...

Silcon carbide semiconductor device having schottky barrier diode a...

Method of making silicon carbide semiconductor device having multi-...

SiC semiconductor having junction barrier schottky device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND ELECTRONIC COMPONENT USING THE SAME

SIC SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARRIER DIODE AND METHOD F...

SEMICONDUCTOR DEVICE MANUFACTURIING METHOD

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Silicon carbide semiconductor device with schottky barrier diode an...

Semiconductor device and method of making the same

Manufacturing method of a semiconductor device

Semiconductor device and manufacturing method of the same

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME

Diode having Schottky junction and PN junction and method for manuf...

Diode

Silicon carbide semiconductor device having junction barrier schott...

Silicon carbide semiconductor device having junction barrier schott...

SiC semiconductor having junction barrier Schottky device

SIS semiconductor having junction barrier schottky device

Silcon carbide semiconductor device having schottky barrier diode a...

SiC semiconductor device having outer periphery structure

Semiconductor device having SiC substrate and method for manufactur...