Takeshi Eri

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Nitride semiconductor free-standing substrate and method for making...
- Patent number 8,466,471
- Issue date Jun 18, 2013
- Hitachi Cable, Ltd.
- Takayuki Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride semiconductor free-standing substrate and method...
- Patent number 8,310,029
- Issue date Nov 13, 2012
- Hitachi Cable, Ltd.
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III nitride semiconductor freestanding substrate and manufact...
- Patent number 8,102,026
- Issue date Jan 24, 2012
- Hitachi Cable, Ltd.
- Takeshi Eri
- C30 - CRYSTAL GROWTH
Information Patent Grant
Porous substrate and its manufacturing method, and gan semiconducto...
- Patent number 7,829,913
- Issue date Nov 9, 2010
- Hitachi Cable, Ltd.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Group III nitride semiconductor free-standing substrate and method...
- Publication number 20110006397
- Publication date Jan 13, 2011
- Hitachi Cable, Ltd.
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND MANUFACT...
- Publication number 20100258812
- Publication date Oct 14, 2010
- Hitachi Cable, Ltd.
- Takeshi Eri
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor free-standing substrate and method for making...
- Publication number 20090160026
- Publication date Jun 25, 2009
- Hitachi Cable, Ltd.
- Takayuki Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Application
Porous substrate and its manufacturing method, and gan semiconducto...
- Publication number 20060046511
- Publication date Mar 2, 2006
- Masatomo Shibata
- C30 - CRYSTAL GROWTH