Takeshi Hasegawa

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Kariya, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating SiC semiconductor device
- Patent number 6,841,436
- Issue date Jan 11, 2005
- Denso Corporation
- Yoshiyuki Hisada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing silicon carbide device by cleaning silicon carb...
- Patent number 6,589,337
- Issue date Jul 8, 2003
- Denso Corporation
- Yoshiyuki Hisada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide single crystal and silicon...
- Patent number 6,214,108
- Issue date Apr 10, 2001
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Atsuto Okamoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 5,629,534
- Issue date May 13, 1997
- Nippondenso Co., Ltd.
- Hajime Inuzuka
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Expandable powder coating composition, method of coating a substrat...
- Patent number 5,047,439
- Issue date Sep 10, 1991
- Somar Corporation
- Katuya Sano
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...

Patents Applicationslast 30 patents

Information Patent Application
Method of fabricating SiC semiconductor device
- Publication number 20050064639
- Publication date Mar 24, 2005
- Yoshiyuki Hisada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating SiC semiconductor device
- Publication number 20030073270
- Publication date Apr 17, 2003
- Yoshiyuki Hisada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of producing silicon carbide device by cleaning silicon carb...
- Publication number 20020033130
- Publication date Mar 21, 2002
- Yoshiyuki Hisada
- C30 - CRYSTAL GROWTH