Takeshi Ishiguro

Person

Aizuwakamatsu, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with oxide-nitride stack
- Patent number 11,935,839
- Issue date Mar 19, 2024
- Icemos Technology Corporation
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened high voltage superjunction MOSFET
- Patent number 11,757,001
- Issue date Sep 12, 2023
- IceMos Technology Limited
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened high voltage superjunction MOSFET
- Patent number 11,362,179
- Issue date Jun 14, 2022
- IceMos Technology Ltd.
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with oxide-nitride stack
- Patent number 11,362,042
- Issue date Jun 14, 2022
- Icemos Technology Corporation
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-directional trenching of a die in manufacturing superjunction...
- Patent number 9,543,380
- Issue date Jan 10, 2017
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate pad and gate feed breakdown voltage enhancement
- Patent number 9,536,941
- Issue date Jan 3, 2017
- Kenji Sugiura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming superjunction high voltage devices using wafer bo...
- Patent number 9,461,109
- Issue date Oct 4, 2016
- Icemos Technology, Ltd.
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stripe orientation for trenches and contact windows
- Patent number 9,349,725
- Issue date May 24, 2016
- Kenji Sugiura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing superjunction devices
- Patent number 9,147,751
- Issue date Sep 29, 2015
- Icemos Technology Ltd.
- Samuel Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
800 V superjunction device
- Patent number 8,963,239
- Issue date Feb 24, 2015
- Icemos Technology, Ltd.
- Samuel Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction devices having narrow surface layout of terminal stru...
- Patent number 8,946,814
- Issue date Feb 3, 2015
- Icemos Technology Ltd.
- Samuel Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a trench type semiconductor device having...
- Patent number 8,580,651
- Issue date Nov 12, 2013
- Icemos Technology Ltd.
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-angle rotation for ion implantation of trenches in superjunct...
- Patent number 8,114,751
- Issue date Feb 14, 2012
- Icemos Technology Ltd.
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-directional trenching of a die in manufacturing superjunction...
- Patent number 8,012,806
- Issue date Sep 6, 2011
- Icemos Technology Ltd.
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-angle rotation for ion implantation of trenches in superjunct...
- Patent number 7,846,821
- Issue date Dec 7, 2010
- Icemos Technology Ltd.
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench depth monitor for semiconductor manufacturing
- Patent number 7,795,045
- Issue date Sep 14, 2010
- Icemos Technology Ltd.
- Hugh J. Griffin
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Methods for manufacturing a trench type semiconductor device having...
- Patent number 7,723,172
- Issue date May 25, 2010
- Icemos Technology Ltd.
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having field stabilization film and method
- Patent number 7,632,760
- Issue date Dec 15, 2009
- Semiconductor Components Industries, LLC
- Shanghui Larry Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral FET structure with improved blocking voltage and on resista...
- Patent number 6,982,461
- Issue date Jan 3, 2006
- Semiconductor Components Industries, LLC
- Zia Hossain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device and structure therefor
- Patent number 6,613,622
- Issue date Sep 2, 2003
- Semiconductor Components Industries LLC
- Rajesh S. Nair
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device and structure therefor
- Patent number 6,589,845
- Issue date Jul 8, 2003
- Semiconductor Components Industries LLC
- Rajesh S. Nair
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NMOSFET with negative voltage capability formed in P-type substrate...
- Patent number 6,555,877
- Issue date Apr 29, 2003
- Semiconductor Components Industries LLC
- Mohamed Imam
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

Patents Applicationslast 30 patents

Information Patent Application
Radiation Hardened High Voltage Superjunction MOSFET
- Publication number 20230369403
- Publication date Nov 16, 2023
- IceMos Technology Limited
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Power MOSFET on Partial SOI
- Publication number 20230207568
- Publication date Jun 29, 2023
- IceMos Technology Limited
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming MOSFET Optimized for RDS...
- Publication number 20230154977
- Publication date May 18, 2023
- IceMos Technology Limited
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming Charge Balanced Power MO...
- Publication number 20230154976
- Publication date May 18, 2023
- IceMos Technology Limited
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super-Junction MOSFET/IGBT with MEMS Layer Transfer and WBG Drain
- Publication number 20230065348
- Publication date Mar 2, 2023
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming Radiation Hardened Subst...
- Publication number 20230060866
- Publication date Mar 2, 2023
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Breakdown Voltage, Low RDSON Electrical Component with Dissimi...
- Publication number 20230067511
- Publication date Mar 2, 2023
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Direct Wafer Bonding Between Sem...
- Publication number 20230064236
- Publication date Mar 2, 2023
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Providing Rad Hard Power Transis...
- Publication number 20230061775
- Publication date Mar 2, 2023
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming Sacrificial Heteroepitax...
- Publication number 20230061047
- Publication date Mar 2, 2023
- IceMos Technology Limited
- Aymeric Privat
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Radiation Hardened High Voltage Superjunction MOSFET
- Publication number 20220293733
- Publication date Sep 15, 2022
- IceMos Technology Limited
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Oxide-Nitride Stack
- Publication number 20220293531
- Publication date Sep 15, 2022
- Icemos Technology Corporation
- Kiraneswar MUTHUSEENU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIATION HARDENED HIGH VOLTAGE SUPERJUNCTION MOSFET
- Publication number 20220028973
- Publication date Jan 27, 2022
- ICEMOS TECHNOLOGY LTD.
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH OXIDE-NITRIDE STACK
- Publication number 20210233864
- Publication date Jul 29, 2021
- Icemos Technology Corporation
- Kiraneswar MUTHUSEENU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SUPERJUNCTION HIGH VOLTAGE DEVICES USING WAFER BO...
- Publication number 20160268367
- Publication date Sep 15, 2016
- ICEMOS TECHNOLOGY LTD.
- Takeshi ISHIGURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE PAD AND GATE FEED BREAKDOWN VOLTAGE ENHANCEMENT
- Publication number 20160163787
- Publication date Jun 9, 2016
- MICHAEL W. SHORE
- Kenji SUGIURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION DEVICES HAVING NARROW SURFACE LAYOUT OF TERMINAL STRU...
- Publication number 20150111354
- Publication date Apr 23, 2015
- ICEMOS TECHNOLOGY LTD.
- Samuel ANDERSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE PAD AND GATE FEED BREAKDOWN VOLTAGE ENHANCEMENT
- Publication number 20140264619
- Publication date Sep 18, 2014
- MICHAEL W. SHORE
- Kenji SUGIURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
800 V SUPERJUNCTION DEVICE
- Publication number 20140264582
- Publication date Sep 18, 2014
- ICEMOS TECHNOLOGY LTD.
- Samuel ANDERSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRIPE ORIENTATION FOR TRENCHES AND CONTACT WINDOWS
- Publication number 20140264620
- Publication date Sep 18, 2014
- ICEMOS TECHNOLOGY LTD.
- Kenji SUGIURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION DEVICES HAVING NARROW SURFACE LAYOUT OF TERMINAL STRU...
- Publication number 20130299900
- Publication date Nov 14, 2013
- Samuel ANDERSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-DIRECTIONAL TRENCHING OF A DIE IN MANUFACTURING SUPERJUNCTION...
- Publication number 20110254137
- Publication date Oct 20, 2011
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Angle Rotation for Ion Implantation of Trenches in Superjunct...
- Publication number 20110068440
- Publication date Mar 24, 2011
- ICEMOS TECHNOLOGY LTD.
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH DEPTH MONITOR FOR SEMICONDUCTOR MANUFACTURING
- Publication number 20090200547
- Publication date Aug 13, 2009
- ICEMOS TECHNOLOGY LTD.
- Hugh J. Griffin
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
MULTI-ANGLE ROTATION FOR ION IMPLANTATION OF TRENCHES IN SUPERJUNCT...
- Publication number 20090200634
- Publication date Aug 13, 2009
- ICEMOS TECHNOLOGY LTD.
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-DIRECTIONAL TRENCHING OF A DIE IN MANUFACTURING SUPERJUNCTION...
- Publication number 20090085147
- Publication date Apr 2, 2009
- Icemos Technology Corporation
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-DIRECTIONAL TRENCHING OF A PLURALITY OF DIES IN MANUFACTURING...
- Publication number 20090085148
- Publication date Apr 2, 2009
- Icemos Technology Corporation
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION DEVICES HAVING NARROW SURFACE LAYOUT OF TERMINAL STRU...
- Publication number 20080272429
- Publication date Nov 6, 2008
- Icemos Technology Corporation
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MANUFACTURING A TRENCH TYPE SEMICONDUCTOR DEVICE HAVING...
- Publication number 20080258239
- Publication date Oct 23, 2008
- Icemos Technology Corporation
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MANUFACTURING A TRENCH TYPE SEMICONDUCTOR DEVICE HAVING...
- Publication number 20080258226
- Publication date Oct 23, 2008
- Icemos Technology Corporation
- Takeshi Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS

Takeshi Ishiguro

Person

Patents Grantslast 30 patents

Semiconductor device with oxide-nitride stack

Radiation hardened high voltage superjunction MOSFET

Radiation hardened high voltage superjunction MOSFET

Semiconductor device with oxide-nitride stack

Multi-directional trenching of a die in manufacturing superjunction...

Gate pad and gate feed breakdown voltage enhancement

Method of forming superjunction high voltage devices using wafer bo...

Stripe orientation for trenches and contact windows

Methods of manufacturing superjunction devices

800 V superjunction device

Superjunction devices having narrow surface layout of terminal stru...

Methods for manufacturing a trench type semiconductor device having...

Multi-angle rotation for ion implantation of trenches in superjunct...

Multi-directional trenching of a die in manufacturing superjunction...

Multi-angle rotation for ion implantation of trenches in superjunct...

Trench depth monitor for semiconductor manufacturing

Methods for manufacturing a trench type semiconductor device having...

Semiconductor device having field stabilization film and method

Lateral FET structure with improved blocking voltage and on resista...

Method of forming a semiconductor device and structure therefor

Method of forming a semiconductor device and structure therefor

NMOSFET with negative voltage capability formed in P-type substrate...

Patents Applicationslast 30 patents

Radiation Hardened High Voltage Superjunction MOSFET

Semiconductor Device and Method for Power MOSFET on Partial SOI

Semiconductor Device and Method of Forming MOSFET Optimized for RDS...

Semiconductor Device and Method of Forming Charge Balanced Power MO...

Super-Junction MOSFET/IGBT with MEMS Layer Transfer and WBG Drain

Semiconductor Device and Method of Forming Radiation Hardened Subst...

High-Breakdown Voltage, Low RDSON Electrical Component with Dissimi...

Semiconductor Device and Method of Direct Wafer Bonding Between Sem...

Semiconductor Device and Method of Providing Rad Hard Power Transis...

Semiconductor Device and Method of Forming Sacrificial Heteroepitax...

Radiation Hardened High Voltage Superjunction MOSFET

Semiconductor Device with Oxide-Nitride Stack

RADIATION HARDENED HIGH VOLTAGE SUPERJUNCTION MOSFET

SEMICONDUCTOR DEVICE WITH OXIDE-NITRIDE STACK

METHOD OF FORMING SUPERJUNCTION HIGH VOLTAGE DEVICES USING WAFER BO...

GATE PAD AND GATE FEED BREAKDOWN VOLTAGE ENHANCEMENT

SUPERJUNCTION DEVICES HAVING NARROW SURFACE LAYOUT OF TERMINAL STRU...

GATE PAD AND GATE FEED BREAKDOWN VOLTAGE ENHANCEMENT

800 V SUPERJUNCTION DEVICE

STRIPE ORIENTATION FOR TRENCHES AND CONTACT WINDOWS

SUPERJUNCTION DEVICES HAVING NARROW SURFACE LAYOUT OF TERMINAL STRU...

MULTI-DIRECTIONAL TRENCHING OF A DIE IN MANUFACTURING SUPERJUNCTION...

Multi-Angle Rotation for Ion Implantation of Trenches in Superjunct...

TRENCH DEPTH MONITOR FOR SEMICONDUCTOR MANUFACTURING

MULTI-ANGLE ROTATION FOR ION IMPLANTATION OF TRENCHES IN SUPERJUNCT...

MULTI-DIRECTIONAL TRENCHING OF A DIE IN MANUFACTURING SUPERJUNCTION...

MULTI-DIRECTIONAL TRENCHING OF A PLURALITY OF DIES IN MANUFACTURING...

SUPERJUNCTION DEVICES HAVING NARROW SURFACE LAYOUT OF TERMINAL STRU...

METHODS FOR MANUFACTURING A TRENCH TYPE SEMICONDUCTOR DEVICE HAVING...

METHODS FOR MANUFACTURING A TRENCH TYPE SEMICONDUCTOR DEVICE HAVING...