Takeshi Meguro

Person

Kitaibaraki-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Epitaxial wafer for hetero-junction bipolar transistor and hetero-j...
- Patent number 10,312,324
- Issue date Jun 4, 2019
- Sumitomo Chemical Company, Limited
- Takeshi Meguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer for heterojunction bipolar transistor and heterojun...
- Patent number 9,865,715
- Issue date Jan 9, 2018
- Sumitomo Chemical Company, Limited
- Shinjiro Fujio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor epitaxial wafer and nitride semiconductor device
- Patent number 9,293,539
- Issue date Mar 22, 2016
- SCIOCS COMPANY LIMITED
- Harunori Sakaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device
- Patent number 8,664,697
- Issue date Mar 4, 2014
- Hitachi Cable, Ltd.
- Takeshi Meguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor free-standing substrate and method for making...
- Patent number 8,466,471
- Issue date Jun 18, 2013
- Hitachi Cable, Ltd.
- Takayuki Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III nitride semiconductor freestanding substrate and manufact...
- Patent number 8,102,026
- Issue date Jan 24, 2012
- Hitachi Cable, Ltd.
- Takeshi Eri
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor substrate
- Patent number 7,986,030
- Issue date Jul 26, 2011
- Hitachi Cable, Ltd.
- Takeshi Meguro
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing nitride semiconductor substrate
- Patent number 7,867,881
- Issue date Jan 11, 2011
- Hitachi Cable, Ltd.
- Takeshi Meguro
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor substrate and method of making same
- Patent number 7,670,856
- Issue date Mar 2, 2010
- Hitachi Cable, Ltd.
- Takayuki Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lamp
- Patent number 7,211,955
- Issue date May 1, 2007
- Matsushita Electric Industrial Co., Ltd.
- Takeshi Meguro
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for manufacturing discharge tube and discharge lamp
- Patent number 6,729,925
- Issue date May 4, 2004
- Matsushita Electric Industrial Co., Ltd.
- Takeshi Meguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a discharge tube
- Patent number 6,568,216
- Issue date May 27, 2003
- Matsushita Electric Industrial Co., Ltd.
- Takeshi Meguro
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Method for manufacturing a discharge tube
- Patent number 6,487,878
- Issue date Dec 3, 2002
- Matsushita Electric Industrial Co., Ltd.
- Takeshi Meguro
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Mounting structure and mounting process from semiconductor devices
- Patent number 6,274,389
- Issue date Aug 14, 2001
- Loctite (R&D) Ltd.
- Kazutoshi Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solder
- Patent number 5,690,890
- Issue date Nov 25, 1997
- Matsushita Electric Industrial Co., Ltd.
- Yasuji Kawashima
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR WAFER FOR HETEROJUNCTION BIPOLAR TRANSISTOR AND HETER...
- Publication number 20210210602
- Publication date Jul 8, 2021
- SCIOCS COMPANY LIMITED
- Takeshi MEGURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER FOR HETERO-JUNCTION BIPOLAR TRANSISTOR AND HETERO-J...
- Publication number 20180061948
- Publication date Mar 1, 2018
- Sumitomo Chemical Company, Limited
- Takeshi MEGURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER FOR HETEROJUNCTION BIPOLAR TRANSISTOR AND HETEROJUN...
- Publication number 20170200816
- Publication date Jul 13, 2017
- Sumitomo Chemical Company, Limited
- Shinjiro FUJIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR EPITAXIAL WAFER AND NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20150194493
- Publication date Jul 9, 2015
- Hitachi Metals, Ltd.
- Harunori SAKAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE
- Publication number 20130009212
- Publication date Jan 10, 2013
- Takeshi MEGURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP-III NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND MANUFACT...
- Publication number 20100258812
- Publication date Oct 14, 2010
- Hitachi Cable, Ltd.
- Takeshi Eri
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor substrate
- Publication number 20100084745
- Publication date Apr 8, 2010
- Hitachi Cable, Ltd.
- Takeshi Meguro
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20090233423
- Publication date Sep 17, 2009
- Takeshi MEGURO
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor free-standing substrate and method for making...
- Publication number 20090160026
- Publication date Jun 25, 2009
- Hitachi Cable, Ltd.
- Takayuki Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor substrate and method of making same
- Publication number 20080157282
- Publication date Jul 3, 2008
- Hitachi Cable, Ltd.
- Takayuki SUZUKI
- C30 - CRYSTAL GROWTH
Information Patent Application
Self-standing GaN single crystal substrate, method of making same,...
- Publication number 20070131967
- Publication date Jun 14, 2007
- HITACHI CABLE, LTD.
- Yusuke Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lamp
- Publication number 20060061281
- Publication date Mar 23, 2006
- Matsushita Electric Industrial Co., Ltd.
- Takeshi Meguro
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
Method for manufacturing a discharge tube
- Publication number 20020178752
- Publication date Dec 5, 2002
- Matsushita Electric Industrial Co., Ltd.
- Takeshi Meguro
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Application
Method for manufacturing discharge tube and discharge lamp
- Publication number 20020098767
- Publication date Jul 25, 2002
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Takeshi Meguro
- H01 - BASIC ELECTRIC ELEMENTS

Takeshi Meguro

Person

Patents Grantslast 30 patents

Epitaxial wafer for hetero-junction bipolar transistor and hetero-j...

Epitaxial wafer for heterojunction bipolar transistor and heterojun...

Nitride semiconductor epitaxial wafer and nitride semiconductor device

Transistor device

Nitride semiconductor free-standing substrate and method for making...

Group-III nitride semiconductor freestanding substrate and manufact...

Nitride semiconductor substrate

Method of manufacturing nitride semiconductor substrate

Nitride semiconductor substrate and method of making same

Lamp

Method for manufacturing discharge tube and discharge lamp

Method for manufacturing a discharge tube

Method for manufacturing a discharge tube

Mounting structure and mounting process from semiconductor devices

Solder

Patents Applicationslast 30 patents

SEMICONDUCTOR WAFER FOR HETEROJUNCTION BIPOLAR TRANSISTOR AND HETER...

EPITAXIAL WAFER FOR HETERO-JUNCTION BIPOLAR TRANSISTOR AND HETERO-J...

EPITAXIAL WAFER FOR HETEROJUNCTION BIPOLAR TRANSISTOR AND HETEROJUN...

NITRIDE SEMICONDUCTOR EPITAXIAL WAFER AND NITRIDE SEMICONDUCTOR DEVICE

TRANSISTOR DEVICE

GROUP-III NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND MANUFACT...

Nitride semiconductor substrate

METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

Nitride semiconductor free-standing substrate and method for making...

Nitride semiconductor substrate and method of making same

Self-standing GaN single crystal substrate, method of making same,...

Lamp

Method for manufacturing a discharge tube

Method for manufacturing discharge tube and discharge lamp