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Takeshi Senda
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Kitakanbara-gun, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Manufacturing method for semiconductor silicon wafer
Patent number
12,046,469
Issue date
Jul 23, 2024
Globalwafers Japan Co., Ltd
Takeshi Senda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicon wafer and method for manufacturing the same
Patent number
10,141,180
Issue date
Nov 27, 2018
Globalwafers Japan Co., Ltd
Koji Araki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Thermal treatment method of silicon wafer and silicon wafer
Patent number
9,059,099
Issue date
Jun 16, 2015
Global Wafers Japan Co., Ltd.
Takeshi Senda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicon wafer and method for heat-treating silicon wafer
Patent number
8,999,864
Issue date
Apr 7, 2015
Global Wafers Japan Co., Ltd.
Takeshi Senda
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Method of manufacturing single crystal silicon wafer from ingot gro...
Patent number
8,476,149
Issue date
Jul 2, 2013
Global Wafers Japan Co., Ltd.
Hiromichi Isogai
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for heat treating a silicon wafer
Patent number
8,399,341
Issue date
Mar 19, 2013
Covalent Materials Corporation
Takeshi Senda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of heat treating silicon wafer
Patent number
8,252,700
Issue date
Aug 28, 2012
Covalent Materials Corporation
Takeshi Senda
C30 - CRYSTAL GROWTH
Information
Patent Grant
Manufacturing method for silicon wafer
Patent number
7,977,219
Issue date
Jul 12, 2011
Covalent Materials Corporation
Hiromichi Isogai
C30 - CRYSTAL GROWTH
Information
Patent Grant
Surface inspection apparatus and surface inspection method for stra...
Patent number
7,679,730
Issue date
Mar 16, 2010
Shibaura Mechatronics Corporation
Hideaki Takano
G01 - MEASURING TESTING
Information
Patent Grant
Manufacturing method for strained silicon wafer
Patent number
7,250,357
Issue date
Jul 31, 2007
Toshiba Ceramics Co., Ltd.
Takeshi Senda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Manufacturing method for strained silicon wafer
Patent number
7,247,583
Issue date
Jul 24, 2007
Toshiba Ceramics Co., Ltd.
Hisatsugu Kurita
C30 - CRYSTAL GROWTH
Information
Patent Grant
Manufacturing method for a silicon substrate having strained layer
Patent number
7,060,597
Issue date
Jun 13, 2006
Toshiba Ceramics Co., Ltd.
Hisatsugu Kurita
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
METHOD OF MANUFACTURING SILICON EPITAXIAL SUBSTRATE AND SILICON EPI...
Publication number
20250051961
Publication date
Feb 13, 2025
GlobalWafers Japan Co., Ltd.
Takeshi SENDA
C30 - CRYSTAL GROWTH
Information
Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR SILICON WAFER
Publication number
20230073641
Publication date
Mar 9, 2023
GlobalWafers Japan Co., Ltd.
Takeshi SENDA
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR SILICON WAFER
Publication number
20230061427
Publication date
Mar 2, 2023
GlobalWafers Japan Co., Ltd.
Takeshi SENDA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR SILICON WAFER
Publication number
20230055929
Publication date
Feb 23, 2023
GlobalWafers Japan Co., Ltd.
Takeshi SENDA
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME
Publication number
20150044422
Publication date
Feb 12, 2015
GLOBALWAFERS JAPAN CO., LTD.
Koji ARAKI
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR HEAT-TREATING SILICON WAFER
Publication number
20130078588
Publication date
Mar 28, 2013
Covalent Silicon Corporation
Takeshi Senda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
THERMAL TREATMENT METHOD OF SILICON WAFER AND SILICON WAFER
Publication number
20120241912
Publication date
Sep 27, 2012
COVALENT MATERIALS CORPORATION
Takeshi SENDA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR HEAT TREATING A SILICON WAFER
Publication number
20120184091
Publication date
Jul 19, 2012
Covalent Materials Corporation
Takeshi Senda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SILICON WAFER AND METHOD FOR HEAT-TREATING SILICON WAFER
Publication number
20120139088
Publication date
Jun 7, 2012
Covalent Materials Corporation
Takeshi Senda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of heat treating silicon wafer
Publication number
20100197146
Publication date
Aug 5, 2010
COVALENT MATERIALS CORPORATION
Takeshi Senda
C30 - CRYSTAL GROWTH
Information
Patent Application
MANUFACTURING METHOD FOR SILICON WAFER
Publication number
20100055884
Publication date
Mar 4, 2010
COVALENT MATERIALS CORPORATION
Hiromichi Isogai
C30 - CRYSTAL GROWTH
Information
Patent Application
SILICON WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR HEA...
Publication number
20100038757
Publication date
Feb 18, 2010
COVALENT MATERIALS CORPORATION
Hiromichi Isogai
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
Publication number
20090004825
Publication date
Jan 1, 2009
Covalent Materials Corporation
Takeshi Senda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
Publication number
20080164572
Publication date
Jul 10, 2008
Covalent Materials Corporation
Eiji Toyoda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SILICON WAFER
Publication number
20070240628
Publication date
Oct 18, 2007
Toshiba Ceramics Co., Ltd
Takashi Watanabe
C30 - CRYSTAL GROWTH
Information
Patent Application
Method of manufacturing silicon wafer
Publication number
20070068447
Publication date
Mar 29, 2007
TOSHIBA CERAMICS CO., LTD.
Koji Izunome
C30 - CRYSTAL GROWTH
Information
Patent Application
Manufacturing method for strained silicon wafer
Publication number
20060057856
Publication date
Mar 16, 2006
TOSHIBA CERAMICS CO., LTD.
Takeshi Senda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Manufacturing method for strained silicon wafer
Publication number
20050170664
Publication date
Aug 4, 2005
TOSHIBA CERAMICS CO., LTD.
Hisatsugu Kurita
C30 - CRYSTAL GROWTH
Information
Patent Application
Manufacturing method for a silicon substrate having strained layer
Publication number
20040235274
Publication date
Nov 25, 2004
TOSHIBA CERAMICS CO., LTD.
Hisatsugu Kurita
C30 - CRYSTAL GROWTH