Takeshi Toda

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 9,450,089
- Issue date Sep 20, 2016
- Renesas Electronics Corporation
- Takeshi Toda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device capable of reducing interelectrode leak curren...
- Patent number 8,803,285
- Issue date Aug 12, 2014
- Renesas Electronics Corporation
- Hiroto Ohtake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device including capacitor el...
- Patent number 8,481,399
- Issue date Jul 9, 2013
- Renesas Electronics Corporation
- Masayuki Furumiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including capacitor element provided above wir...
- Patent number 8,039,924
- Issue date Oct 18, 2011
- Renesas Electronics Corporation
- Masayuki Furumiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including triple-stacked structures having the...
- Patent number 7,732,895
- Issue date Jun 8, 2010
- NEC Electronics Corporation
- Takeshi Toda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,633,138
- Issue date Dec 15, 2009
- NEC Electronics Corporation
- Toshiyuki Takewaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150214359
- Publication date Jul 30, 2015
- RENESAS ELECTRONICS CORPORATION
- Takeshi Toda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20140319591
- Publication date Oct 30, 2014
- RENESAS ELECTRONICS CORPORATION
- Takeshi TODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MIM ELEMENT AND METHOD OF MANUFACTUR...
- Publication number 20120015495
- Publication date Jan 19, 2012
- RENESAS ELECTRONIC CORPORATION
- Masayuki Furumiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including MIM element and method of manufactur...
- Publication number 20090014835
- Publication date Jan 15, 2009
- NEC ELECTRONICS CORPORATION
- Masayuki Furumiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including capacitor connected between two cond...
- Publication number 20070267720
- Publication date Nov 22, 2007
- NEC Electronics Corporation
- Takeshi Toda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE CAPABLE OF REDUCING INTERELECTRODE LEAK CURREN...
- Publication number 20070262417
- Publication date Nov 15, 2007
- NEC Corporation
- Hiroto Ohtake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including triple-stacked structures having the...
- Publication number 20070262453
- Publication date Nov 15, 2007
- NEC ELECTRONICS CORPORATION
- Takeshi Toda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20070034924
- Publication date Feb 15, 2007
- NEC ELECTRONICS CORPORATION
- Toshiyuki Takewaki
- H01 - BASIC ELECTRIC ELEMENTS

Takeshi Toda

Person

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device capable of reducing interelectrode leak curren...

Method of manufacturing semiconductor device including capacitor el...

Semiconductor device including capacitor element provided above wir...

Semiconductor device including triple-stacked structures having the...

Semiconductor device and method of manufacturing the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE INCLUDING MIM ELEMENT AND METHOD OF MANUFACTUR...

Semiconductor device including MIM element and method of manufactur...

Semiconductor device including capacitor connected between two cond...

SEMICONDUCTOR DEVICE CAPABLE OF REDUCING INTERELECTRODE LEAK CURREN...

Semiconductor device including triple-stacked structures having the...

Semiconductor device and method of manufacturing the same