Takumi Moriyama

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory device including self-aligned drain-select...
- Patent number 12,004,347
- Issue date Jun 4, 2024
- SanDisk Technologies LLC
- Nobuyuki Fujimura
Information Patent Grant
Memory die containing through-memory-level via structure and method...
- Patent number 11,127,655
- Issue date Sep 21, 2021
- SanDisk Technologies LLC
- Takumi Moriyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing a silicon nitride ring i...
- Patent number 11,024,645
- Issue date Jun 1, 2021
- SanDisk Technologies LLC
- Takumi Moriyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device using a buried source line with a t...
- Patent number 10,916,556
- Issue date Feb 9, 2021
- SanDisk Technologies LLC
- Kiyohiko Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing a capped insulating sour...
- Patent number 10,854,627
- Issue date Dec 1, 2020
- SanDisk Technologies LLC
- Takumi Moriyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having nitrided direct source strap...
- Patent number 10,720,445
- Issue date Jul 21, 2020
- SanDisk Technologies LLC
- Satoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER...
- Publication number 20240363165
- Publication date Oct 31, 2024
- SANDISK TECHNOLOGIES LLC
- Kento SAKANE
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SILICON OXYCARBIDE LINER...
- Publication number 20240260267
- Publication date Aug 1, 2024
- SANDISK TECHNOLOGIES LLC
- Masanori TSUTSUMI
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SILICON OXYCARBIDE LINER...
- Publication number 20240260266
- Publication date Aug 1, 2024
- SANDISK TECHNOLOGIES LLC
- Naohiro HOSODA
Information Patent Application
BONDED THREE-DIMENSIONAL MEMORY DEVICE HAVING TEMPORARY ELECTRICAL...
- Publication number 20240243061
- Publication date Jul 18, 2024
- SANDISK TECHNOLOGIES LLC
- Takumi MORIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH THROUGH-STACK CONTACT VIA STRU...
- Publication number 20240215243
- Publication date Jun 27, 2024
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Masanori TSUTSUMI
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DISCRETE CHARGE STORAGE E...
- Publication number 20230345727
- Publication date Oct 26, 2023
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Nobuyuki FUJIMURA
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING SELF-ALIGNED DRAIN-SELECT...
- Publication number 20220344365
- Publication date Oct 27, 2022
- SANDISK TECHNOLOGIES LLC
- Nobuyuki FUJIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A SILICON NITRIDE RING I...
- Publication number 20210036004
- Publication date Feb 4, 2021
- SANDISK TECHNOLOGIES LLC
- Takumi MORIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DIE CONTAINING THROUGH-MEMORY-LEVEL VIA STRUCTURE AND METHOD...
- Publication number 20200286815
- Publication date Sep 10, 2020
- SANDISK TECHNOLOGIES LLC
- Takumi Moriyama
- H01 - BASIC ELECTRIC ELEMENTS

Takumi Moriyama

Person

Patents Grantslast 30 patents

Three-dimensional memory device including self-aligned drain-select...

Memory die containing through-memory-level via structure and method...

Three-dimensional memory device containing a silicon nitride ring i...

Three-dimensional memory device using a buried source line with a t...

Three-dimensional memory device containing a capped insulating sour...

Three-dimensional memory device having nitrided direct source strap...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SILICON OXYCARBIDE LINER...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SILICON OXYCARBIDE LINER...

BONDED THREE-DIMENSIONAL MEMORY DEVICE HAVING TEMPORARY ELECTRICAL...

THREE-DIMENSIONAL MEMORY DEVICE WITH THROUGH-STACK CONTACT VIA STRU...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DISCRETE CHARGE STORAGE E...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING SELF-ALIGNED DRAIN-SELECT...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING A SILICON NITRIDE RING I...

MEMORY DIE CONTAINING THROUGH-MEMORY-LEVEL VIA STRUCTURE AND METHOD...