Takumi Shotokuji

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of III-V compound crystal and manufacturing me...
- Patent number 10,910,511
- Issue date Feb 2, 2021
- Osaka University
- Yusuke Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of processing single-crystal substrate
- Patent number 10,157,793
- Issue date Dec 18, 2018
- Disco Corporation
- Hiroshi Morikazu
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Optical device wafer processing method
- Patent number 10,109,527
- Issue date Oct 23, 2018
- Disco Corporation
- Ryugo Oba
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Processing method of single-crystal substrate
- Patent number 10,103,061
- Issue date Oct 16, 2018
- Disco Corporation
- Hiroshi Morikazu
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Wafer processing method
- Patent number 10,096,517
- Issue date Oct 9, 2018
- Disco Corporation
- Tomoki Yoshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer processing method
- Patent number 9,887,140
- Issue date Feb 6, 2018
- Disco Corporation
- Noboru Takeda
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Processing method of optical device wafer
- Patent number 9,761,492
- Issue date Sep 12, 2017
- Disco Corporation
- Takumi Shotokuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of processing single-crystal substrate
- Patent number 9,735,040
- Issue date Aug 15, 2017
- Disco Corporation
- Hiroshi Morikazu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING METHOD OF III-V COMPOUND CRYSTAL AND MANUFACTURING ME...
- Publication number 20190088816
- Publication date Mar 21, 2019
- Disco Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Application
WAFER PROCESSING METHOD
- Publication number 20170301592
- Publication date Oct 19, 2017
- Disco Corporation
- Noboru Takeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER PROCESSING METHOD
- Publication number 20170243786
- Publication date Aug 24, 2017
- Disco Corporation
- Tomoki Yoshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING METHOD OF OPTICAL DEVICE WAFER
- Publication number 20170103921
- Publication date Apr 13, 2017
- Disco Corporation
- Takumi Shotokuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICAL DEVICE WAFER PROCESSING METHOD
- Publication number 20170098579
- Publication date Apr 6, 2017
- Disco Corporation
- Ryugo Oba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PROCESSING SINGLE-CRYSTAL SUBSTRATE
- Publication number 20160270151
- Publication date Sep 15, 2016
- Disco Corporation
- Hiroshi Morikazu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PROCESSING SINGLE-CRYSTAL SUBSTRATE
- Publication number 20160268155
- Publication date Sep 15, 2016
- Disco Corporation
- Hiroshi Morikazu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING METHOD OF SINGLE-CRYSTAL SUBSTRATE
- Publication number 20160260630
- Publication date Sep 8, 2016
- Disco Corporation
- Hiroshi Morikazu
- H01 - BASIC ELECTRIC ELEMENTS

Takumi Shotokuji

Person

Patents Grantslast 30 patents

Manufacturing method of III-V compound crystal and manufacturing me...

Method of processing single-crystal substrate

Optical device wafer processing method

Processing method of single-crystal substrate

Wafer processing method

Wafer processing method

Processing method of optical device wafer

Method of processing single-crystal substrate

Patents Applicationslast 30 patents

MANUFACTURING METHOD OF III-V COMPOUND CRYSTAL AND MANUFACTURING ME...

WAFER PROCESSING METHOD

WAFER PROCESSING METHOD

PROCESSING METHOD OF OPTICAL DEVICE WAFER

OPTICAL DEVICE WAFER PROCESSING METHOD

METHOD OF PROCESSING SINGLE-CRYSTAL SUBSTRATE

METHOD OF PROCESSING SINGLE-CRYSTAL SUBSTRATE

PROCESSING METHOD OF SINGLE-CRYSTAL SUBSTRATE