Takuya Otabe

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Fukuyama-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device comprising high-withstand voltage MOSFET and i...
- Patent number 7,851,853
- Issue date Dec 14, 2010
- Sharp Kabushiki Kaisha
- Satoshi Hikida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for variable resistive element
- Patent number 7,743,488
- Issue date Jun 29, 2010
- Sharp Kabushiki Kaisha
- Yukio Tamai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication method
- Patent number 7,276,175
- Issue date Oct 2, 2007
- Sharp Kabushiki Kaisha
- Takuya Otabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including a capacitor an upper electrod...
- Patent number 6,855,973
- Issue date Feb 15, 2005
- Sharp Kabushiki Kaisha
- Takuya Otabe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING HIGH-WITHSTAND VOLTAGE MOSFET AND I...
- Publication number 20080135973
- Publication date Jun 12, 2008
- Sharp Kabushiki Kaisha
- Satoshi HIKIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method for variable resistive element
- Publication number 20060281277
- Publication date Dec 14, 2006
- Sharp Kabushiki Kaisha
- Yukio Tamai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device fabrication method
- Publication number 20050186334
- Publication date Aug 25, 2005
- Sharp Kabushiki Kaisha
- Takuya Otabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device including a capacitor an upper electrod...
- Publication number 20030057463
- Publication date Mar 27, 2003
- Takuya Otabe
- H01 - BASIC ELECTRIC ELEMENTS