Takuyo Nakamura

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing silicon carbide epitaxial wafer
- Patent number 11,948,794
- Issue date Apr 2, 2024
- Mitsubishi Electric Corporation
- Masashi Sakai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Test condition determining apparatus and test condition determining...
- Patent number 10,886,184
- Issue date Jan 5, 2021
- Mitsubishi Electric Corporation
- Takuyo Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide epitaxial wafer
- Patent number 10,229,830
- Issue date Mar 12, 2019
- Mitsubishi Electric Corporation
- Kenichi Hamano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 9,530,703
- Issue date Dec 27, 2016
- Mitsubishi Electric Corporation
- Hiroshi Sugimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device manufacturing method
- Patent number 8,932,944
- Issue date Jan 13, 2015
- Mitsubishi Electric Corporation
- Yoichiro Tarui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 8,525,189
- Issue date Sep 3, 2013
- Mitsubishi Electric Corporation
- Yoichiro Tarui
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR INSPECTION APPARATUS, METHOD OF INSPECTING SEMICONDUC...
- Publication number 20240353351
- Publication date Oct 24, 2024
- Mitsubishi Electric Corporation
- Takuyo NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER
- Publication number 20220028688
- Publication date Jan 27, 2022
- Mitsubishi Electric Corporation
- Masashi SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER, METHOD FOR MANUFACTURING SILICON C...
- Publication number 20200321437
- Publication date Oct 8, 2020
- Mitsubishi Electric Corporation
- Masashi SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST CONDITION DETERMINING APPARATUS AND TEST CONDITION DETERMINING...
- Publication number 20190221485
- Publication date Jul 18, 2019
- Mitsubishi Electric Corporation
- Takuyo NAKAMURA
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER
- Publication number 20180226246
- Publication date Aug 9, 2018
- Mitsubishi Electric Corporation
- Kenichi HAMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20150262892
- Publication date Sep 17, 2015
- Mitsubishi Electric Corporation
- Hiroshi Sugimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20130309851
- Publication date Nov 21, 2013
- MITSUBISHI ELECTRIC CORPORATION
- Yoichiro TARUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20120132924
- Publication date May 31, 2012
- Mitsubishi Electric Corporation
- Yoichiro TARUI
- H01 - BASIC ELECTRIC ELEMENTS

Takuyo Nakamura

Person

Patents Grantslast 30 patents

Method of manufacturing silicon carbide epitaxial wafer

Test condition determining apparatus and test condition determining...

Method of manufacturing silicon carbide epitaxial wafer

Method for manufacturing silicon carbide semiconductor device

Silicon carbide semiconductor device manufacturing method

Silicon carbide semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR INSPECTION APPARATUS, METHOD OF INSPECTING SEMICONDUC...

METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER

SILICON CARBIDE EPITAXIAL WAFER, METHOD FOR MANUFACTURING SILICON C...

TEST CONDITION DETERMINING APPARATUS AND TEST CONDITION DETERMINING...

METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR