Takuzo Ogawa

Person

Hitachi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Field controlled thyristor control circuit with additional FCT in r...
- Patent number 4,354,121
- Issue date Oct 12, 1982
- Hitachi, Ltd.
- Yoshio Terasawa
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Method of selectively diffusing aluminium into a silicon semiconduc...
- Patent number 4,290,830
- Issue date Sep 22, 1981
- Hitachi, Ltd.
- Yasuhiro Mochizuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 4,262,295
- Issue date Apr 14, 1981
- Hitachi, Ltd.
- Sadao Okano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field controlled thyristor with dual resistivity field layer
- Patent number 4,223,328
- Issue date Sep 16, 1980
- Hitachi, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor having low on-state voltage with low areal doping emitter...
- Patent number 4,219,832
- Issue date Aug 26, 1980
- Hitachi, Ltd.
- Masayoshi Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of simultaneously controlling the lifetimes and leakage curr...
- Patent number 4,210,464
- Issue date Jul 1, 1980
- Hitachi, Ltd.
- Tomoyuki Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature-compensated voltage reference diode with intermediate p...
- Patent number 4,200,877
- Issue date Apr 29, 1980
- Hitachi, Ltd.
- Takaya Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase diffusion of aluminum with or without boron
- Patent number 4,193,826
- Issue date Mar 18, 1980
- Hitachi, Ltd.
- Yasuhiro Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparation of semiconductor devices utilizing a two-st...
- Patent number 4,164,436
- Issue date Aug 14, 1979
- Hitachi, Ltd.
- Mitsuru Ura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low forward voltage drop semiconductor device having polycrystallin...
- Patent number 4,146,906
- Issue date Mar 27, 1979
- Hitachi, Ltd.
- Kenji Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photo-coupled semiconductor device
- Patent number 4,136,351
- Issue date Jan 23, 1979
- Hitachi, Ltd.
- Yoshitaka Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping inpurities
- Patent number 4,100,310
- Issue date Jul 11, 1978
- Hitachi, Ltd.
- Mitsuru Ura
- C30 - CRYSTAL GROWTH

Takuzo Ogawa

Person

Patents Grantslast 30 patents

Field controlled thyristor control circuit with additional FCT in r...

Method of selectively diffusing aluminium into a silicon semiconduc...

Semiconductor device

Field controlled thyristor with dual resistivity field layer

Thyristor having low on-state voltage with low areal doping emitter...

Method of simultaneously controlling the lifetimes and leakage curr...

Temperature-compensated voltage reference diode with intermediate p...

Vapor phase diffusion of aluminum with or without boron

Process for preparation of semiconductor devices utilizing a two-st...

Low forward voltage drop semiconductor device having polycrystallin...

Photo-coupled semiconductor device

Method of doping inpurities