Tangali S. Sudarshan

Person

Columbia, SC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of growing high quality, thick SiC epitaxial films by elimin...
- Patent number 10,260,166
- Issue date Apr 16, 2019
- University of South Carolina
- Tangali S. Sudarshan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optically switched graphene/4H-SiC junction bipolar transistor
- Patent number 9,966,491
- Issue date May 8, 2018
- University of South Carolina
- MVS Chandrashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing high quality, thick SiC epitaxial films by elimin...
- Patent number 9,885,124
- Issue date Feb 6, 2018
- University of South Carolina
- Tangali S. Sudarshan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods of growing a silicon carbide epitaxial layer on a substrate...
- Patent number 9,842,898
- Issue date Dec 12, 2017
- University of South Carolina
- Tangali S. Sudarshan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods, wires, and apparatus for slicing hard materials
- Patent number 9,782,846
- Issue date Oct 10, 2017
- University of South Carolina
- Tangali Sudarshan
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Pretreatment method for reduction and/or elimination of basal plane...
- Patent number 9,644,288
- Issue date May 9, 2017
- University of South Carolina
- Tangali S. Sudarshan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Pretreatment method for reduction and/or elimination of basal plane...
- Patent number 9,644,287
- Issue date May 9, 2017
- University of South Carolina
- Tangali S. Sudarshan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Diffused junction termination structures for silicon carbide devices
- Patent number 9,570,560
- Issue date Feb 14, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pretreatment method for reduction and/or elimination of basal plane...
- Patent number 8,900,979
- Issue date Dec 2, 2014
- University of South Carolina
- Tangali S. Sudarshan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods, wires, and apparatus for slicing hard materials
- Patent number 8,820,308
- Issue date Sep 2, 2014
- University of South Carolina
- Tangali Sudarshan
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Methods, wires, and apparatus for slicing hard materials
- Patent number 8,820,309
- Issue date Sep 2, 2014
- Univeristy of South Carolina
- Tangali Sudarshan
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Diffused junction termination structures for silicon carbide device...
- Patent number 8,637,386
- Issue date Jan 28, 2014
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of growing a silicon carbide epitaxial layer on a substrate...
- Patent number 8,574,528
- Issue date Nov 5, 2013
- University of South Carolina
- Tangali S. Sudarshan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods, wires, and apparatus for slicing hard materials
- Patent number 8,291,895
- Issue date Oct 23, 2012
- University of South Carolina
- Tangali Sudarshan
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
System and method for fabricating diodes
- Patent number 7,061,021
- Issue date Jun 13, 2006
- The University of South Carolina
- Tangali S. Sudarshan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of wetting metals
- Patent number 4,780,176
- Issue date Oct 25, 1988
- University of South Carolina
- Tangali S. Sudarshan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Elimination of Basal Plane Dislocation and Pinning the Conversion P...
- Publication number 20200056302
- Publication date Feb 20, 2020
- University of South Carolina
- ANUSHA BALACHANDRAN
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Growing High Quality, Thick SiC Epitaxial Films by Elimin...
- Publication number 20180044816
- Publication date Feb 15, 2018
- University of South Carolina
- Tangali S. Sudarshan
- C30 - CRYSTAL GROWTH
Information Patent Application
OPTICALLY SWITCHED GRAPHENE/4H-SiC JUNCTION BIPOLAR TRANSISTOR
- Publication number 20160315211
- Publication date Oct 27, 2016
- University of South Carolina
- MVS Chandrashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEFECT ENGINEERED HIGH QUALITY MULTILAYER EPITAXIAL GRAPHENE GROWTH...
- Publication number 20150368827
- Publication date Dec 24, 2015
- University of South Carolina
- Tangali S. Sudarshan
- C30 - CRYSTAL GROWTH
Information Patent Application
Pretreatment Method for Reduction and/or Elimination of Basal Plane...
- Publication number 20150128850
- Publication date May 14, 2015
- University of South Carolina
- Tangali S. Sudarshan
- C30 - CRYSTAL GROWTH
Information Patent Application
Pretreatment Method for Reduction and/or Elimination of Basal Plane...
- Publication number 20150129897
- Publication date May 14, 2015
- University of South Carolina
- Tangali S. Sudarshan
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS, WIRES, AND APPARATUS FOR SLICING HARD MATERIALS
- Publication number 20150000590
- Publication date Jan 1, 2015
- Tangali Sudarshan
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Application
Method of Growing High Quality, Thick SiC Epitaxial Films by Elimin...
- Publication number 20140338588
- Publication date Nov 20, 2014
- Tangali S. Sudarshan
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods of Growing a Silicon Carbide Epitaxial Layer on a Substrate...
- Publication number 20140231826
- Publication date Aug 21, 2014
- Tangali S. Sudarshan
- C30 - CRYSTAL GROWTH
Information Patent Application
Diffused Junction Termination Structures for Silicon Carbide Devices
- Publication number 20140097450
- Publication date Apr 10, 2014
- The University of South Carolina
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pretreatment Method for Reduction and/or Elimination of Basal Plane...
- Publication number 20130143396
- Publication date Jun 6, 2013
- University of South Carolina
- Tangali S. Sudarshan
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS, WIRES, AND APPARATUS FOR SLICING HARD MATERIALS
- Publication number 20130092143
- Publication date Apr 18, 2013
- University of South Carolina
- Tangali Sudarshan
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Application
METHODS, WIRES, AND APPARATUS FOR SLICING HARD MATERIALS
- Publication number 20130068209
- Publication date Mar 21, 2013
- University of South Carolina
- Tangali Sudarshan
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Application
METHODS OF GROWING A SILICON CARBIDE EPITAXIAL LAYER ON A SUBSTRATE...
- Publication number 20110059003
- Publication date Mar 10, 2011
- University of South Carolina
- Tangali S. Sudarshan
- C30 - CRYSTAL GROWTH
Information Patent Application
DIFFUSED JUNCTION TERMINATION STRUCTURES FOR SILICON CARBIDE DEVICE...
- Publication number 20100289032
- Publication date Nov 18, 2010
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide and Related Wide Bandgap Semiconductor Based Optica...
- Publication number 20100276699
- Publication date Nov 4, 2010
- University of South Carolina
- Feng Zhao
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Methods, Wires, and Apparatus for Slicing Hard Materials
- Publication number 20090064983
- Publication date Mar 12, 2009
- Tangali Sudarshan
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR

Tangali S. Sudarshan

Person

Patents Grantslast 30 patents

Method of growing high quality, thick SiC epitaxial films by elimin...

Optically switched graphene/4H-SiC junction bipolar transistor

Method of growing high quality, thick SiC epitaxial films by elimin...

Methods of growing a silicon carbide epitaxial layer on a substrate...

Methods, wires, and apparatus for slicing hard materials

Pretreatment method for reduction and/or elimination of basal plane...

Pretreatment method for reduction and/or elimination of basal plane...

Diffused junction termination structures for silicon carbide devices

Pretreatment method for reduction and/or elimination of basal plane...

Methods, wires, and apparatus for slicing hard materials

Methods, wires, and apparatus for slicing hard materials

Diffused junction termination structures for silicon carbide device...

Methods of growing a silicon carbide epitaxial layer on a substrate...

Methods, wires, and apparatus for slicing hard materials

System and method for fabricating diodes

Method of wetting metals

Patents Applicationslast 30 patents

Elimination of Basal Plane Dislocation and Pinning the Conversion P...

Method of Growing High Quality, Thick SiC Epitaxial Films by Elimin...

OPTICALLY SWITCHED GRAPHENE/4H-SiC JUNCTION BIPOLAR TRANSISTOR

DEFECT ENGINEERED HIGH QUALITY MULTILAYER EPITAXIAL GRAPHENE GROWTH...

Pretreatment Method for Reduction and/or Elimination of Basal Plane...

Pretreatment Method for Reduction and/or Elimination of Basal Plane...

METHODS, WIRES, AND APPARATUS FOR SLICING HARD MATERIALS

Method of Growing High Quality, Thick SiC Epitaxial Films by Elimin...

Methods of Growing a Silicon Carbide Epitaxial Layer on a Substrate...

Diffused Junction Termination Structures for Silicon Carbide Devices

Pretreatment Method for Reduction and/or Elimination of Basal Plane...

METHODS, WIRES, AND APPARATUS FOR SLICING HARD MATERIALS

METHODS, WIRES, AND APPARATUS FOR SLICING HARD MATERIALS

METHODS OF GROWING A SILICON CARBIDE EPITAXIAL LAYER ON A SUBSTRATE...

DIFFUSED JUNCTION TERMINATION STRUCTURES FOR SILICON CARBIDE DEVICE...

Silicon Carbide and Related Wide Bandgap Semiconductor Based Optica...

Methods, Wires, and Apparatus for Slicing Hard Materials