Tanuj Saxena

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Termination ballast to suppress hotspot formation in trench field p...
- Patent number 12,349,436
- Issue date Jul 1, 2025
- NXP USA, INC.
- Tanuj Saxena
Information Patent Grant
Transistor with integrated short circuit protection
- Patent number 12,170,254
- Issue date Dec 17, 2024
- NXP USA, INC.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination for trench field plate power MOSFET
- Patent number 11,631,763
- Issue date Apr 18, 2023
- NXP USA, INC.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mirror device structure for power MOSFET and method of manufacture
- Patent number 11,489,072
- Issue date Nov 1, 2022
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination for trench field plate power MOSFET
- Patent number 11,329,150
- Issue date May 10, 2022
- NXP USA, INC.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mirror device structure for power MOSFET and method of manufacture
- Patent number 11,004,970
- Issue date May 11, 2021
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacture of super-junction power semiconductor device
- Patent number 10,811,502
- Issue date Oct 20, 2020
- NXP USA, INC.
- Vishnu Khemka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional power MOSFET structure with a cathode short structure
- Patent number 10,672,902
- Issue date Jun 2, 2020
- NXP USA, INC.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bi-directional switches and method for making same
- Patent number 10,644,146
- Issue date May 5, 2020
- NXP USA, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Die with buried doped isolation region
- Patent number 10,607,880
- Issue date Mar 31, 2020
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination design for trench superjunction power MOSFET
- Patent number 10,431,678
- Issue date Oct 1, 2019
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional power MOSFET structure with a cathode short structure
- Patent number 10,297,684
- Issue date May 21, 2019
- NXP USA, INC.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction power semiconductor device and method for forming
- Patent number 10,153,357
- Issue date Dec 11, 2018
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination design for trench superjunction power MOSFET
- Patent number 10,103,257
- Issue date Oct 16, 2018
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR WITH INTEGRATED SHORT CIRCUIT PROTECTION
- Publication number 20240113045
- Publication date Apr 4, 2024
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION BALLAST TO SUPPRESS HOTSPOT FORMATION IN TRENCH FIELD P...
- Publication number 20220393004
- Publication date Dec 8, 2022
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION FOR TRENCH FIELD PLATE POWER MOSFET
- Publication number 20220231161
- Publication date Jul 21, 2022
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION FOR TRENCH FIELD PLATE POWER MOSFET
- Publication number 20210320200
- Publication date Oct 14, 2021
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIRROR DEVICE STRUCTURE FOR POWER MOSFET AND METHOD OF MANUFACTURE
- Publication number 20210226054
- Publication date Jul 22, 2021
- NXP USA, Inc.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIRROR DEVICE STRUCTURE FOR POWER MOSFET AND METHOD OF MANUFACTURE
- Publication number 20200373426
- Publication date Nov 26, 2020
- NXP USA, Inc.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL BI-DIRECTIONAL SWITCHES AND METHOD FOR MAKING SAME
- Publication number 20200152786
- Publication date May 14, 2020
- NXP USA, Inc.
- Moaniss ZITOUNI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIE WITH BURIED DOPED ISOLATION REGION
- Publication number 20200075393
- Publication date Mar 5, 2020
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL POWER MOSFET STRUCTURE WITH A CATHODE SHORT STRUCTURE
- Publication number 20190237571
- Publication date Aug 1, 2019
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination Design For Trench Superjunction Power MOSFET
- Publication number 20190148541
- Publication date May 16, 2019
- NXP USA, Inc.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL POWER MOSFET STRUCTURE WITH A CATHODE SHORT STRUCTURE
- Publication number 20190103484
- Publication date Apr 4, 2019
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS

Tanuj Saxena

Person

Patents Grantslast 30 patents

Termination ballast to suppress hotspot formation in trench field p...

Transistor with integrated short circuit protection

Termination for trench field plate power MOSFET

Mirror device structure for power MOSFET and method of manufacture

Termination for trench field plate power MOSFET

Mirror device structure for power MOSFET and method of manufacture

Method of manufacture of super-junction power semiconductor device

Bidirectional power MOSFET structure with a cathode short structure

Vertical bi-directional switches and method for making same

Die with buried doped isolation region

Termination design for trench superjunction power MOSFET

Bidirectional power MOSFET structure with a cathode short structure

Superjunction power semiconductor device and method for forming

Termination design for trench superjunction power MOSFET

Patents Applicationslast 30 patents

TRANSISTOR WITH INTEGRATED SHORT CIRCUIT PROTECTION

TERMINATION BALLAST TO SUPPRESS HOTSPOT FORMATION IN TRENCH FIELD P...

TERMINATION FOR TRENCH FIELD PLATE POWER MOSFET

TERMINATION FOR TRENCH FIELD PLATE POWER MOSFET

MIRROR DEVICE STRUCTURE FOR POWER MOSFET AND METHOD OF MANUFACTURE

MIRROR DEVICE STRUCTURE FOR POWER MOSFET AND METHOD OF MANUFACTURE

VERTICAL BI-DIRECTIONAL SWITCHES AND METHOD FOR MAKING SAME

DIE WITH BURIED DOPED ISOLATION REGION

BIDIRECTIONAL POWER MOSFET STRUCTURE WITH A CATHODE SHORT STRUCTURE

Termination Design For Trench Superjunction Power MOSFET

BIDIRECTIONAL POWER MOSFET STRUCTURE WITH A CATHODE SHORT STRUCTURE