Tao HAN

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Formation of epi source/drain material on transistor devices and th...
- Patent number 10,777,463
- Issue date Sep 15, 2020
- GLOBALFOUNDRIES Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer with laminate liner
- Patent number 10,755,918
- Issue date Aug 25, 2020
- GLOBALFOUNDRIES, INC.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing finfet devices using narrow and wide gate c...
- Patent number 10,586,860
- Issue date Mar 10, 2020
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming replacement gate structures on transistor devices
- Patent number 10,453,936
- Issue date Oct 22, 2019
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-layer spacers for field-effect transistors
- Patent number 10,431,665
- Issue date Oct 1, 2019
- GLOBALFOUNDRIES Inc.
- Tao Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with robust low-k sidewall spacers and method...
- Patent number 10,192,791
- Issue date Jan 29, 2019
- GLOBALFOUNDRIES Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminated spacers for field-effect transistors
- Patent number 10,008,456
- Issue date Jun 26, 2018
- GLOBALFOUNDRIES Inc.
- Tao Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-layer spacers for field-effect transistors
- Patent number 9,947,769
- Issue date Apr 17, 2018
- GLOBALFOUNDRIES Inc.
- Tao Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits using flowable chemical...
- Patent number 9,831,098
- Issue date Nov 28, 2017
- GLOBALFOUNDRIES, INC.
- Xinyuan Dou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer spacer used in finFET
- Patent number 9,419,101
- Issue date Aug 16, 2016
- GLOBALFOUNDRIES Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FORMATION OF EPI SOURCE/DRAIN MATERIAL ON TRANSISTOR DEVICES AND TH...
- Publication number 20200227320
- Publication date Jul 16, 2020
- GLOBALFOUNDRIES INC.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER WITH LAMINATE LINER
- Publication number 20200161122
- Publication date May 21, 2020
- GLOBALFOUNDRIES INC.
- Man GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC PRODUCT COMPRISING AN INSULATING GATE SEPARATION STRUCTURE POSIT...
- Publication number 20190355832
- Publication date Nov 21, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD OF MANUFACTURING FINFET DEVICES USING NARROW AND WIDE GATE...
- Publication number 20190341475
- Publication date Nov 7, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON TRANSISTOR DEVICES
- Publication number 20190131429
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE-LAYER SPACERS FOR FIELD-EFFECT TRANSISTORS
- Publication number 20180151690
- Publication date May 31, 2018
- GLOBALFOUNDRIES INC.
- Tao Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS USING FLOWABLE CHEMICAL...
- Publication number 20170018452
- Publication date Jan 19, 2017
- GLOBALFOUNDRIES, Inc.
- Xinyuan Dou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF SEMICONDUCTOR STRUCTURES USING OXIDIZED POLYCRYSTALL...
- Publication number 20150270159
- Publication date Sep 24, 2015
- GLOBALFOUNDRIES INC.
- Haigou HUANG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Formation of epi source/drain material on transistor devices and th...

Spacer with laminate liner

Method of manufacturing finfet devices using narrow and wide gate c...

Methods of forming replacement gate structures on transistor devices

Multiple-layer spacers for field-effect transistors

Semiconductor devices with robust low-k sidewall spacers and method...

Laminated spacers for field-effect transistors

Multiple-layer spacers for field-effect transistors

Methods for fabricating integrated circuits using flowable chemical...

Multi-layer spacer used in finFET

Patents Applicationslast 30 patents

FORMATION OF EPI SOURCE/DRAIN MATERIAL ON TRANSISTOR DEVICES AND TH...

SPACER WITH LAMINATE LINER

IC PRODUCT COMPRISING AN INSULATING GATE SEPARATION STRUCTURE POSIT...

A METHOD OF MANUFACTURING FINFET DEVICES USING NARROW AND WIDE GATE...

METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON TRANSISTOR DEVICES

MULTIPLE-LAYER SPACERS FOR FIELD-EFFECT TRANSISTORS

METHODS FOR FABRICATING INTEGRATED CIRCUITS USING FLOWABLE CHEMICAL...

FABRICATION OF SEMICONDUCTOR STRUCTURES USING OXIDIZED POLYCRYSTALL...