Taro Nagahama

Person

Tsukuba-Shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 9,219,227
- Issue date Dec 22, 2015
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 9,087,980
- Issue date Jul 21, 2015
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,705,269
- Issue date Apr 22, 2014
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,680,632
- Issue date Mar 25, 2014
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect element, magnetic memory
- Patent number 8,502,331
- Issue date Aug 6, 2013
- Kabushiki Kaisha Toshiba
- Eiji Kitagawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,208,292
- Issue date Jun 26, 2012
- Kabushiki Kaisha Toshiba
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,107,281
- Issue date Jan 31, 2012
- Kabushiki Kaisha Toshiba
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunnel magnetoresistance element having a double underlayer of amor...
- Patent number 7,514,160
- Issue date Apr 7, 2009
- National Institute of Advanced Industrial Science and Technology
- Taro Nagahama
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunnel magnetoresistance element
- Patent number 7,220,498
- Issue date May 22, 2007
- National Institute of Advanced Industrial Science and Technology
- Taro Nagahama
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20150076635
- Publication date Mar 19, 2015
- KABUSHIKI KAISHA TOSHIBA
- Tadaomi DAIBOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20140159177
- Publication date Jun 12, 2014
- WPI-AIMR, Tohoku University
- Tadaomi DAIBOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MAN...
- Publication number 20130288397
- Publication date Oct 31, 2013
- Eiji Kitagawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120241881
- Publication date Sep 27, 2012
- TOHOKU UNIVERSITY
- Tadaomi DAIBOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120099369
- Publication date Apr 26, 2012
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120069640
- Publication date Mar 22, 2012
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MAN...
- Publication number 20120068285
- Publication date Mar 22, 2012
- Kabushiki Kaisha Toshiba
- Eiji KITAGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20110073970
- Publication date Mar 31, 2011
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Application
TUNNEL MAGNETORESISTANCE ELEMENT
- Publication number 20070128470
- Publication date Jun 7, 2007
- National Inst. of Advanced Ind. Science and Tech.
- Taro Nagahama
- G01 - MEASURING TESTING
Information Patent Application
Tunnel magnetoresistive element
- Publication number 20040144995
- Publication date Jul 29, 2004
- Taro Nagahama
- G01 - MEASURING TESTING

Taro Nagahama

Person

Patents Grantslast 30 patents

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive effect element, magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Tunnel magnetoresistance element having a double underlayer of amor...

Tunnel magnetoresistance element

Patents Applicationslast 30 patents

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MAN...

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MAN...

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

TUNNEL MAGNETORESISTANCE ELEMENT

Tunnel magnetoresistive element