Taro NISHIGUCHI

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide epitaxial substrate
- Patent number 11,984,480
- Issue date May 14, 2024
- Sumitomo Electronic Industries, Ltd.
- Taro Enokizono
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 11,530,491
- Issue date Dec 20, 2022
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide substrate and method of manufacturing the same
- Patent number 11,242,618
- Issue date Feb 8, 2022
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 11,053,607
- Issue date Jul 6, 2021
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide epitaxial substrate having grooves extending along...
- Patent number 11,004,941
- Issue date May 11, 2021
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate having grooves extending along...
- Patent number 10,770,550
- Issue date Sep 8, 2020
- Sumitomo Electric Industries, Ltd
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 10,741,683
- Issue date Aug 11, 2020
- Sumitomo Electric Industries, Ltd
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor stack
- Patent number 10,734,222
- Issue date Aug 4, 2020
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer and method for manufacturing same
- Patent number 10,612,160
- Issue date Apr 7, 2020
- Sumitomo Electric Industries, Ltd
- Taro Nishiguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor stack
- Patent number 10,580,647
- Issue date Mar 3, 2020
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate having a silicon carbide layer...
- Patent number 10,490,634
- Issue date Nov 26, 2019
- Sumitomo Electric Industries, Ltd
- Keiji Wada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer and method for manufacturing same
- Patent number 10,472,736
- Issue date Nov 12, 2019
- Sumitomo Electric Industries, Ltd
- Taro Nishiguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 10,396,163
- Issue date Aug 27, 2019
- Sumitomo Electric Industries, Ltd
- Keiji Wada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor stack
- Patent number 10,395,924
- Issue date Aug 27, 2019
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide epitaxial substrate, silic...
- Patent number 10,229,836
- Issue date Mar 12, 2019
- Sumitomo Electric Industries, Ltd
- Keiji Wada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide semiconductor substrate and method for manufacturin...
- Patent number 9,966,249
- Issue date May 8, 2018
- Sumitomo Electric Industries, Ltd
- So Tanaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer and method for manufacturing same
- Patent number 9,957,641
- Issue date May 1, 2018
- Sumitomo Electric Industries, Ltd
- Taro Nishiguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 9,947,782
- Issue date Apr 17, 2018
- Sumitomo Electric Industries, Ltd
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide epitaxial substrate, and s...
- Patent number 9,777,404
- Issue date Oct 3, 2017
- Sumitomo Electric Industries, Ltd
- Keiji Wada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing same
- Patent number 9,728,628
- Issue date Aug 8, 2017
- Sumitomo Electric Industries, Ltd
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide substrate
- Patent number 9,631,296
- Issue date Apr 25, 2017
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dislocation in SiC semiconductor substrate
- Patent number 9,583,571
- Issue date Feb 28, 2017
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dislocation in SiC semiconductor substrate
- Patent number 9,450,054
- Issue date Sep 20, 2016
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate and method of manufacturing the same
- Patent number 9,255,344
- Issue date Feb 9, 2016
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dislocation in SiC semiconductor substrate
- Patent number 9,184,239
- Issue date Nov 10, 2015
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing single crystal
- Patent number 9,090,992
- Issue date Jul 28, 2015
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide single crystal, and silico...
- Patent number 9,082,621
- Issue date Jul 14, 2015
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 9,057,147
- Issue date Jun 16, 2015
- Sumitomo Electric Industries, Ltd
- Jun Genba
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dislocations in SiC semiconductor substrate
- Patent number 8,912,550
- Issue date Dec 16, 2014
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide crystal ingot, silicon carbide crystal wafer, and m...
- Patent number 8,642,154
- Issue date Feb 4, 2014
- Sumitomo Electric Insustries, Ltd.
- Tsutomu Hori
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING SILICO...
- Publication number 20240332364
- Publication date Oct 3, 2024
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20240026569
- Publication date Jan 25, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki NISHIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE...
- Publication number 20230369411
- Publication date Nov 16, 2023
- Sumitomo Electric Industries, Ltd.
- Takashi SAKURADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20230272550
- Publication date Aug 31, 2023
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20230261057
- Publication date Aug 17, 2023
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20230059737
- Publication date Feb 23, 2023
- Sumitomo Electric Industries, Ltd.
- Hironori ITOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20210328024
- Publication date Oct 21, 2021
- Sumitomo Electric Industries, Ltd.
- Taro ENOKIZONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20210296443
- Publication date Sep 23, 2021
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE HAVING GROOVES EXTENDING ALONG...
- Publication number 20200365693
- Publication date Nov 19, 2020
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STACK
- Publication number 20200152457
- Publication date May 14, 2020
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20200052074
- Publication date Feb 13, 2020
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STACK
- Publication number 20190341247
- Publication date Nov 7, 2019
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Application
SEMICONDUCTOR STACK
- Publication number 20190088477
- Publication date Mar 21, 2019
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20190019868
- Publication date Jan 17, 2019
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20190013198
- Publication date Jan 10, 2019
- Sumitomo Electric Industries, Ltd.
- Hironori Itoh
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20180363166
- Publication date Dec 20, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20180277635
- Publication date Sep 27, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20180233562
- Publication date Aug 16, 2018
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
- Publication number 20180209064
- Publication date Jul 26, 2018
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20180204942
- Publication date Jul 19, 2018
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, SILIC...
- Publication number 20180096854
- Publication date Apr 5, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20170275779
- Publication date Sep 28, 2017
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20170152609
- Publication date Jun 1, 2017
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, AND S...
- Publication number 20160355949
- Publication date Dec 8, 2016
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20160351667
- Publication date Dec 1, 2016
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20160348274
- Publication date Dec 1, 2016
- Sumitomo Electric Industries, Ltd.
- Jun GENBA
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
- Publication number 20160326668
- Publication date Nov 10, 2016
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHOD OF MAN...
- Publication number 20160273129
- Publication date Sep 22, 2016
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Makoto SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURIN...
- Publication number 20160233080
- Publication date Aug 11, 2016
- Sumitomo Electric Industries, Ltd.
- So Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20160108553
- Publication date Apr 21, 2016
- Sumitomo Electric Industries, Ltd.
- Shin HARADA
- C30 - CRYSTAL GROWTH

Taro NISHIGUCHI

Person

Patents Grantslast 30 patents

Silicon carbide epitaxial substrate

Silicon carbide epitaxial substrate and method for manufacturing si...

Silicon carbide substrate and method of manufacturing the same

Silicon carbide epitaxial substrate and method for manufacturing si...

Silicon carbide epitaxial substrate having grooves extending along...

Silicon carbide epitaxial substrate having grooves extending along...

Semiconductor device and method for manufacturing same

Semiconductor stack

Epitaxial wafer and method for manufacturing same

Semiconductor stack

Silicon carbide epitaxial substrate having a silicon carbide layer...

Epitaxial wafer and method for manufacturing same

Silicon carbide epitaxial substrate and method for manufacturing si...

Semiconductor stack

Method for manufacturing silicon carbide epitaxial substrate, silic...

Silicon carbide semiconductor substrate and method for manufacturin...

Epitaxial wafer and method for manufacturing same

Semiconductor device and method for manufacturing same

Method for manufacturing silicon carbide epitaxial substrate, and s...

Silicon carbide semiconductor device and method for manufacturing same

Method of manufacturing silicon carbide substrate

Dislocation in SiC semiconductor substrate

Dislocation in SiC semiconductor substrate

Silicon carbide substrate and method of manufacturing the same

Dislocation in SiC semiconductor substrate

Method of manufacturing single crystal

Method for manufacturing silicon carbide single crystal, and silico...

Silicon carbide epitaxial substrate and method of manufacturing sil...

Dislocations in SiC semiconductor substrate

Silicon carbide crystal ingot, silicon carbide crystal wafer, and m...

Patents Applicationslast 30 patents

SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING SILICO...

SILICON CARBIDE EPITAXIAL SUBSTRATE

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE...

SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL SUBSTRATE HAVING GROOVES EXTENDING ALONG...

SEMICONDUCTOR STACK

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SEMICONDUCTOR STACK

SEMICONDUCTOR STACK

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SILICON CARBIDE EPITAXIAL SUBSTRATE

EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, SILIC...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE

METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, AND S...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHOD OF MAN...

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURIN...

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME