Tatehito Kobayashi

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with electrode pad having probe mark
- Patent number 7,524,684
- Issue date Apr 28, 2009
- Renesas Technology Corp.
- Tatehito Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with electrode pad having probe mark
- Patent number 7,279,706
- Issue date Oct 9, 2007
- Renesas Technology Corp.
- Tatehito Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device with electrode pad having probe mark
- Publication number 20080241977
- Publication date Oct 2, 2008
- Renesas Technology Corp.
- Tatehito Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with electrode pad having probe mark
- Publication number 20080009083
- Publication date Jan 10, 2008
- Renesas Technology Corp.
- Tatehito Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with electrode pad having probe mark
- Publication number 20050073056
- Publication date Apr 7, 2005
- RENESAS TECHNOLOGY CORP.
- Tatehito Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS