Tatsuya Kishi

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Authentication device, authentication method, and computer program...
- Patent number 9,460,316
- Issue date Oct 4, 2016
- Kabushiki Kaisha Toshiba
- Tetsufumi Tanamoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element
- Patent number 9,196,822
- Issue date Nov 24, 2015
- Kabushiki Kaisha Toshiba
- Shigeto Fukatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and manufacturing method of the same
- Patent number 9,166,151
- Issue date Oct 20, 2015
- Kabushiki Kaisha Toshiba
- Akiyuki Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element
- Patent number 9,076,960
- Issue date Jul 7, 2015
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect element and method of manufacturing magneto...
- Patent number 9,042,166
- Issue date May 26, 2015
- Kabushiki Kaisha Toshiba
- Masaru Toko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element, magnetic memory device, spin transistor, a...
- Patent number 8,958,239
- Issue date Feb 17, 2015
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,895,162
- Issue date Nov 25, 2014
- Kabushiki Kaisha Toshiba
- Katsuya Nishiyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and method of manufacturing the same
- Patent number 8,884,389
- Issue date Nov 11, 2014
- Kabushiki Kaisha Toshiba
- Masaru Toko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and producing method thereof
- Patent number 8,878,321
- Issue date Nov 4, 2014
- Kabushiki Kaisha Toshiba
- Hisanori Aikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and method of manufacturing the same
- Patent number 8,716,818
- Issue date May 6, 2014
- Kabushiki Kaisha Toshiba
- Masatoshi Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,686,521
- Issue date Apr 1, 2014
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element having an adjustment layer for reducing a l...
- Patent number 8,634,238
- Issue date Jan 21, 2014
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory including a magnetoresistive element
- Patent number 8,530,987
- Issue date Sep 10, 2013
- Kabushiki Kaisha Toshiba
- Hisanori Aikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element and magnetic random access memory
- Patent number 8,378,437
- Issue date Feb 19, 2013
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element
- Patent number 8,363,462
- Issue date Jan 29, 2013
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,299,552
- Issue date Oct 30, 2012
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element and magnetic random access memory
- Patent number 8,279,663
- Issue date Oct 2, 2012
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect device and magnetic memory
- Patent number 8,223,533
- Issue date Jul 17, 2012
- Kabushiki Kaisha Toshiba
- Jyunichi Ozeki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,218,355
- Issue date Jul 10, 2012
- Kabushiki Kaisha Toshiba
- Eiji Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetoresistive random access memory...
- Patent number 8,154,915
- Issue date Apr 10, 2012
- Kabushiki Kaisha Toshiba
- Masatoshi Yoshikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin memory and spin transistor
- Patent number 8,139,403
- Issue date Mar 20, 2012
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetoresistive random access memory...
- Patent number 8,139,405
- Issue date Mar 20, 2012
- Kabushiki Kaisha Toshiba
- Masatoshi Yoshikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,098,514
- Issue date Jan 17, 2012
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Magnetoresistive element
- Patent number 8,036,025
- Issue date Oct 11, 2011
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect element and magnetic random access memory
- Patent number 8,014,193
- Issue date Sep 6, 2011
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element
- Patent number 8,009,465
- Issue date Aug 30, 2011
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element, magnetic memory having said magnetic memor...
- Patent number 7,965,544
- Issue date Jun 21, 2011
- Kabushiki Kaisha Toshiba
- Eiji Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetoresistive random access memory...
- Patent number 7,957,184
- Issue date Jun 7, 2011
- Kabushiki Kaisha Toshiba
- Masatoshi Yoshikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetoresistive random access...
- Patent number 7,924,607
- Issue date Apr 12, 2011
- Kabushiki Kaisha Toshiba
- Masatoshi Yoshikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element with intermediate oxide layer conta...
- Patent number 7,920,361
- Issue date Apr 5, 2011
- Kabushiki Kaisha Toshiba
- Masatoshi Yoshikawa
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
AUTHENTICATION DEVICE, AUTHENTICATION METHOD, AND COMPUTER PROGRAM...
- Publication number 20140372671
- Publication date Dec 18, 2014
- Kabushiki Kaisha Toshiba
- Tetsufumi TANAMOTO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND METHOD OF MANUFACTURING MAGNETO...
- Publication number 20140284736
- Publication date Sep 25, 2014
- Kabushiki Kaisha Toshiba
- Masaru TOKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY ELEMENT
- Publication number 20140264669
- Publication date Sep 18, 2014
- Kabushiki Kaisha Toshiba
- Masahiko NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20140070343
- Publication date Mar 13, 2014
- Kabushiki Kaisha Toshiba
- Shigeto FUKATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETO-RESISTIVE ELEMENT
- Publication number 20140035073
- Publication date Feb 6, 2014
- Kabushiki Kaisha Toshiba
- Masaru TOKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD OF THE SAME
- Publication number 20130313506
- Publication date Nov 28, 2013
- Kabushiki Kaisha Toshiba
- Akiyuki MURAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20130181305
- Publication date Jul 18, 2013
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
- Publication number 20130099338
- Publication date Apr 25, 2013
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
- Publication number 20130099337
- Publication date Apr 25, 2013
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, SPIN TRANSISTOR, A...
- Publication number 20130077388
- Publication date Mar 28, 2013
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130069186
- Publication date Mar 21, 2013
- Kabushiki Kaisha Toshiba
- Masaru TOKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND PRODUCING METHOD THEREOF
- Publication number 20130069184
- Publication date Mar 21, 2013
- Kabushiki Kaisha Toshiba
- Hisanori AIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130001652
- Publication date Jan 3, 2013
- Masatoshi Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY
- Publication number 20120241884
- Publication date Sep 27, 2012
- Hisanori AIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120088125
- Publication date Apr 12, 2012
- NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY
- Katsuya NISHIYAMA
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20120008381
- Publication date Jan 12, 2012
- Toshihiko Nagase
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20110309418
- Publication date Dec 22, 2011
- KABUSHIKI KAISHA TOSHIBA
- Masahiko NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN MEMORY AND SPIN TRANSISTOR
- Publication number 20110228596
- Publication date Sep 22, 2011
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY...
- Publication number 20110222335
- Publication date Sep 15, 2011
- Kabushiki Kaisha Toshiba
- Masatoshi YOSHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY...
- Publication number 20110211389
- Publication date Sep 1, 2011
- Kabushiki Kaisha Toshiba
- Masatoshi YOSHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY HAVING SAID MAGNETIC MEMOR...
- Publication number 20100290270
- Publication date Nov 18, 2010
- Kabushiki Kaisha Toshiba
- Eiji KITAGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20100244163
- Publication date Sep 30, 2010
- Tadaomi Daibou
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY...
- Publication number 20100230770
- Publication date Sep 16, 2010
- Kabushiki Kaisha Toshiba
- Masatoshi YOSHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20100118600
- Publication date May 13, 2010
- Toshihiko Nagase
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC MEMORY
- Publication number 20100080050
- Publication date Apr 1, 2010
- Kabushiki Kaisha Toshiba
- Jyunichi OZEKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20090251951
- Publication date Oct 8, 2009
- Masatoshi Yoshikawa
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20090244792
- Publication date Oct 1, 2009
- Kabushiki Kaisha Toshiba
- Masahiko NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20090243008
- Publication date Oct 1, 2009
- Eiji Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20090224342
- Publication date Sep 10, 2009
- Masahiko NAKAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20090140358
- Publication date Jun 4, 2009
- Masahiko Nakayama
- G11 - INFORMATION STORAGE

Tatsuya Kishi

Person

Patents Grantslast 30 patents

Authentication device, authentication method, and computer program...

Magnetoresistive effect element

Magnetoresistive element and manufacturing method of the same

Magnetic memory element

Magnetoresistive effect element and method of manufacturing magneto...

Magnetic memory element, magnetic memory device, spin transistor, a...

Magnetoresistive element and magnetic memory

Magnetoresistive element and method of manufacturing the same

Magnetoresistive element and producing method thereof

Magnetoresistive element and method of manufacturing the same

Magnetoresistive element and magnetic memory

Magnetic memory element having an adjustment layer for reducing a l...

Magnetic memory including a magnetoresistive element

Magnetoresistive effect element and magnetic random access memory

Magnetoresistive element

Magnetoresistive element and magnetic memory

Magnetoresistance effect element and magnetic random access memory

Magnetoresistive effect device and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetoresistive random access memory...

Spin memory and spin transistor

Magnetoresistive element and magnetoresistive random access memory...

Magnetoresistive element and magnetic memory

Magnetoresistive element

Magnetoresistance effect element and magnetic random access memory

Magnetoresistive element

Magnetic memory element, magnetic memory having said magnetic memor...

Magnetoresistive element and magnetoresistive random access memory...

Magnetoresistance effect element and magnetoresistive random access...

Magnetoresistive effect element with intermediate oxide layer conta...

Patents Applicationslast 30 patents

AUTHENTICATION DEVICE, AUTHENTICATION METHOD, AND COMPUTER PROGRAM...

MAGNETORESISTIVE EFFECT ELEMENT AND METHOD OF MANUFACTURING MAGNETO...

MAGNETIC MEMORY ELEMENT

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETO-RESISTIVE ELEMENT

MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD OF THE SAME

MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, SPIN TRANSISTOR, A...

MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME

MAGNETORESISTIVE ELEMENT AND PRODUCING METHOD THEREOF

MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME

MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

SPIN MEMORY AND SPIN TRANSISTOR

MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY...

MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY...

MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY HAVING SAID MAGNETIC MEMOR...

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY...

MAGNETORESISTIVE ELEMENT

MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETORESISTIVE ELEMENT