Tatsuya TANABE

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group III nitride semiconductor wafer and group III nitride semicon...
- Patent number 8,633,514
- Issue date Jan 21, 2014
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III nitride electronic device and III nitride semiconductor epitaxi...
- Patent number 8,541,816
- Issue date Sep 24, 2013
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,461,570
- Issue date Jun 11, 2013
- Sumitomo Electric Industries, Ltd
- Kei Fujii
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group III nitride semiconductor device and epitaxial substrate
- Patent number 8,410,524
- Issue date Apr 2, 2013
- Sumitomo Electric Industries, Ltd.
- Tatsuya Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film deposition method
- Patent number 8,404,571
- Issue date Mar 26, 2013
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III nitride semiconductor wafer and group III nitride semicon...
- Patent number 8,148,751
- Issue date Apr 3, 2012
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor, field-effect transistor, and epi...
- Patent number 7,884,393
- Issue date Feb 8, 2011
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium nitride semiconductor device and epitaxial substrate
- Patent number 7,872,285
- Issue date Jan 18, 2011
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing group III Nitride Transistor
- Patent number 7,749,828
- Issue date Jul 6, 2010
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of crystal growth of compound semiconductor, compound semico...
- Patent number 6,150,677
- Issue date Nov 21, 2000
- Sumitomo Electric Industries, Ltd.
- So Tanaka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICON...
- Publication number 20120161205
- Publication date Jun 28, 2012
- Sumitomo Electric Industries, Ltd.
- Shin HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM DEPOSITION APPARATUS
- Publication number 20120006263
- Publication date Jan 12, 2012
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20110210313
- Publication date Sep 1, 2011
- Sumitomo Electric Industries, Ltd.
- Kei Fujii
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
FILM DEPOSITION METHOD
- Publication number 20110097880
- Publication date Apr 28, 2011
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICON...
- Publication number 20110049573
- Publication date Mar 3, 2011
- Sumitomo Electric Industries, Ltd.
- Shin HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III NITRIDE ELECTRONIC DEVICE AND III NITRIDE SEMICONDUCTOR EPITAXI...
- Publication number 20100230687
- Publication date Sep 16, 2010
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor, Field-Effect Transistor, and Epi...
- Publication number 20100230723
- Publication date Sep 16, 2010
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate
- Publication number 20090194796
- Publication date Aug 6, 2009
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Semiconductor Device and Epitaxial Substrate
- Publication number 20090189186
- Publication date Jul 30, 2009
- Sumitomo Electric Industries, Ltd.
- Tatsuya Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor, Field-Effect Transistor, Epitaxi...
- Publication number 20090189190
- Publication date Jul 30, 2009
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Semiconductor Device and Epitaxial Substrate
- Publication number 20080265258
- Publication date Oct 30, 2008
- Sumitomo Electric Industries, Ltd.
- Tatsuya Tanabe
- H01 - BASIC ELECTRIC ELEMENTS

Tatsuya TANABE

Person

Patents Grantslast 30 patents

Group III nitride semiconductor wafer and group III nitride semicon...

III nitride electronic device and III nitride semiconductor epitaxi...

Semiconductor device and manufacturing method thereof

Group III nitride semiconductor device and epitaxial substrate

Film deposition method

Group III nitride semiconductor wafer and group III nitride semicon...

High electron mobility transistor, field-effect transistor, and epi...

Vertical gallium nitride semiconductor device and epitaxial substrate

Method of manufacturing group III Nitride Transistor

Method of crystal growth of compound semiconductor, compound semico...

Patents Applicationslast 30 patents

GROUP III NITRIDE SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICON...

FILM DEPOSITION APPARATUS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FILM DEPOSITION METHOD

GROUP III NITRIDE SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICON...

III NITRIDE ELECTRONIC DEVICE AND III NITRIDE SEMICONDUCTOR EPITAXI...

High Electron Mobility Transistor, Field-Effect Transistor, and Epi...

Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate

Group III Nitride Semiconductor Device and Epitaxial Substrate

High Electron Mobility Transistor, Field-Effect Transistor, Epitaxi...

Group III Nitride Semiconductor Device and Epitaxial Substrate