Tenko Yamashita

Person

Schenectady, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Stacked transistor structure with reflection layer
- Patent number 12,142,599
- Issue date Nov 12, 2024
- International Business Machines Corporation
- Teresa J. Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Punch through stopper in bulk finFET device
- Patent number 12,119,393
- Issue date Oct 15, 2024
- Adeia Semiconductor Solutions LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor-based synapse network structure with metal shielding betw...
- Patent number 12,033,061
- Issue date Jul 9, 2024
- International Business Machines Corporation
- Chen Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Gate-all-around field effect transistor having multiple threshold v...
- Patent number 12,015,069
- Issue date Jun 18, 2024
- International Business Machines Corporation
- Ruqiang Bao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Circuit wiring techniques for stacked transistor structures
- Patent number 11,894,303
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Dongbing Shao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Automatic generation of ground rule verification macros
- Patent number 11,847,398
- Issue date Dec 19, 2023
- International Business Machines Corporation
- Jingyu Lian
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Hybrid complementary metal-oxide semiconductor field effect transis...
- Patent number 11,769,796
- Issue date Sep 26, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor with dielectric fin extension
- Patent number 11,764,259
- Issue date Sep 19, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain contact cut last process to enable wrap-around-con...
- Patent number 11,757,012
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Andrew Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing gate resistance in stacked vertical transport field effect...
- Patent number 11,756,957
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read-only memory for chip security that is MOSFET process compatible
- Patent number 11,744,065
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Tenko Yamashita
Information Patent Grant
Air gap spacer formation for nano-scale semiconductor devices
- Patent number 11,658,062
- Issue date May 23, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET complementary metal-oxide-semiconductor (CMOS) devices
- Patent number 11,652,006
- Issue date May 16, 2023
- International Business Machines Corporation
- Tenko Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creation of stress in the channel of a nanosheet transistor
- Patent number 11,575,003
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked vertical transport field effect transistors with anchors
- Patent number 11,569,229
- Issue date Jan 31, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin top hard mask formation after wafer flipping process
- Patent number 11,563,003
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance source drain contact formation with trench metastabl...
- Patent number 11,562,906
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read-only memory with vertical transistors
- Patent number 11,545,499
- Issue date Jan 3, 2023
- International Business Machines Corporation
- Tenko Yamashita
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor divice having a carbon containing insulation layer fo...
- Patent number 11,515,392
- Issue date Nov 29, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with uniform source/drain epitaxy
- Patent number 11,502,202
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Punch through stopper in bulk finFET device
- Patent number 11,404,560
- Issue date Aug 2, 2022
- TESSERA LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a backside ground or power plane in a stacked vertical tran...
- Patent number 11,295,985
- Issue date Apr 5, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET complementary metal-oxide-semiconductor (CMOS) devices
- Patent number 11,244,872
- Issue date Feb 8, 2022
- International Business Machines Corporation
- Tenko Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistor having multiple threshold v...
- Patent number 11,245,020
- Issue date Feb 8, 2022
- International Business Machines Corporation
- Ruqiang Bao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical transistors having improved control of top source or drain...
- Patent number 11,239,342
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VFET bottom epitaxy formed with anchors
- Patent number 11,171,221
- Issue date Nov 9, 2021
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation for stacked vertical transport field-effect trans...
- Patent number 11,164,791
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked vertical transport field effect transistor contact formation
- Patent number 11,164,799
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor with a bottom contact that exhibit...
- Patent number 11,152,507
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analog nonvolatile memory cells using dopant activation
- Patent number 11,145,380
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Heng Wu
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
BACKSIDE CONTACTS FOR GATE, SOURCE, AND DRAIN
- Publication number 20240421003
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT WITH PROTRUDING SOURCE/DRAIN
- Publication number 20240413201
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PASSIVE DEVICE INTEGRATION FOR SILICON-ON-INSULATOR S...
- Publication number 20240395664
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT FORMATION
- Publication number 20240321959
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE
- Publication number 20240120380
- Publication date Apr 11, 2024
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES
- Publication number 20240079266
- Publication date Mar 7, 2024
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATING THIN GATE OXIDE AND THICK GATE OXIDE NANOSHEET TRANS...
- Publication number 20240047525
- Publication date Feb 8, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET ARCHITECTURE WITH SEPARATE GATE REGIONS
- Publication number 20240014212
- Publication date Jan 11, 2024
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY FIN CONTACT IN VERTICALLY STACKED TRANSISTORS
- Publication number 20230420458
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Joshua M. Rubin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK SUBSTRATE BACKSIDE POWER RAIL
- Publication number 20230411290
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
READ-ONLY MEMORY FOR CHIP SECURITY THAT IS MOSFET PROCESS COMPATIBLE
- Publication number 20230354592
- Publication date Nov 2, 2023
- International Business Machines Corporation
- Tenko Yamashita
Information Patent Application
HIGH DENSITY MEMORY WITH STACKED NANOSHEET TRANSISTORS
- Publication number 20230309324
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR STRUCTURE WITH REFLECTION LAYER
- Publication number 20230299053
- Publication date Sep 21, 2023
- International Business Machines Corporation
- Teresa J. Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY INTEGRATED SEMICONDUCTOR DEVICE
- Publication number 20230238285
- Publication date Jul 27, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR WITH ANCHORS
- Publication number 20230122234
- Publication date Apr 20, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
READ-ONLY MEMORY FOR CHIP SECURITY THAT IS MOSFET PROCESS COMPATIBLE
- Publication number 20230092137
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Tenko Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
READ-ONLY MEMORY WITH VERTICAL TRANSISTORS
- Publication number 20230076056
- Publication date Mar 9, 2023
- International Business Machines Corporation
- TENKO YAMASHITA
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSIS...
- Publication number 20230060790
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR WITH DIELECTRIC FIN EXTENSION
- Publication number 20230023157
- Publication date Jan 26, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AUTOMATIC GENERATION OF GROUND RULE VERIFICATION MACROS
- Publication number 20220374578
- Publication date Nov 24, 2022
- International Business Machines Corporation
- JINGYU LIAN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PUNCH THROUGH STOPPER IN BULK FINFET DEVICE
- Publication number 20220336643
- Publication date Oct 20, 2022
- TESSERA LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN TOP HARD MASK FORMATION AFTER WAFER FLIPPING PROCESS
- Publication number 20220231021
- Publication date Jul 21, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR-BASED SYNAPSE NETWORK STRUCTURE WITH METAL SHIELDING BETW...
- Publication number 20220188607
- Publication date Jun 16, 2022
- International Business Machines Corporation
- Chen Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FINFET COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) DEVICES
- Publication number 20220139787
- Publication date May 5, 2022
- International Business Machines Corporation
- Tenko Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
READ-ONLY MEMORY WITH VERTICAL TRANSISTORS
- Publication number 20220108996
- Publication date Apr 7, 2022
- International Business Machines Corporation
- TENKO YAMASHITA
- G11 - INFORMATION STORAGE
Information Patent Application
ANALOG NONVOLATILE MEMORY CELLS USING DOPANT ACTIVATION
- Publication number 20210343358
- Publication date Nov 4, 2021
- International Business Machines Corporation
- Heng Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FINFET COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) DEVICES
- Publication number 20210327769
- Publication date Oct 21, 2021
- International Business Machines Corporation
- Tenko Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SUPERIMPOSED TRANSISTORS
- Publication number 20210328014
- Publication date Oct 21, 2021
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING GATE RESISTANCE IN STACKED VERTICAL TRANSPORT FIELD EFFECT...
- Publication number 20210280578
- Publication date Sep 9, 2021
- International Business Machines Corporation
- Heng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CREATION OF STRESS IN THE CHANNEL OF A NANOSHEET TRANSISTOR
- Publication number 20210257450
- Publication date Aug 19, 2021
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS

Tenko Yamashita

Person

Patents Grantslast 30 patents

Stacked transistor structure with reflection layer

Punch through stopper in bulk finFET device

Capacitor-based synapse network structure with metal shielding betw...

Gate-all-around field effect transistor having multiple threshold v...

Circuit wiring techniques for stacked transistor structures

Automatic generation of ground rule verification macros

Hybrid complementary metal-oxide semiconductor field effect transis...

Vertical field-effect transistor with dielectric fin extension

Source and drain contact cut last process to enable wrap-around-con...

Reducing gate resistance in stacked vertical transport field effect...

Read-only memory for chip security that is MOSFET process compatible

Air gap spacer formation for nano-scale semiconductor devices

FinFET complementary metal-oxide-semiconductor (CMOS) devices

Creation of stress in the channel of a nanosheet transistor

Stacked vertical transport field effect transistors with anchors

Fin top hard mask formation after wafer flipping process

Low resistance source drain contact formation with trench metastabl...

Read-only memory with vertical transistors

Semiconductor divice having a carbon containing insulation layer fo...

Transistors with uniform source/drain epitaxy

Punch through stopper in bulk finFET device

Forming a backside ground or power plane in a stacked vertical tran...

FinFET complementary metal-oxide-semiconductor (CMOS) devices

Gate-all-around field effect transistor having multiple threshold v...

Vertical transistors having improved control of top source or drain...

VFET bottom epitaxy formed with anchors

Contact formation for stacked vertical transport field-effect trans...

Stacked vertical transport field effect transistor contact formation

Vertical field-effect transistor with a bottom contact that exhibit...

Analog nonvolatile memory cells using dopant activation

Patents Applicationslast 30 patents

BACKSIDE CONTACTS FOR GATE, SOURCE, AND DRAIN

SELF-ALIGNED BACKSIDE CONTACT WITH PROTRUDING SOURCE/DRAIN

SEMICONDUCTOR PASSIVE DEVICE INTEGRATION FOR SILICON-ON-INSULATOR S...

BACKSIDE CONTACT FORMATION

FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE

AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES

CO-INTEGRATING THIN GATE OXIDE AND THICK GATE OXIDE NANOSHEET TRANS...

STACKED FET ARCHITECTURE WITH SEPARATE GATE REGIONS

DUMMY FIN CONTACT IN VERTICALLY STACKED TRANSISTORS

BULK SUBSTRATE BACKSIDE POWER RAIL

READ-ONLY MEMORY FOR CHIP SECURITY THAT IS MOSFET PROCESS COMPATIBLE

HIGH DENSITY MEMORY WITH STACKED NANOSHEET TRANSISTORS

STACKED TRANSISTOR STRUCTURE WITH REFLECTION LAYER

VERTICALLY INTEGRATED SEMICONDUCTOR DEVICE

STACKED VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR WITH ANCHORS

READ-ONLY MEMORY FOR CHIP SECURITY THAT IS MOSFET PROCESS COMPATIBLE

READ-ONLY MEMORY WITH VERTICAL TRANSISTORS

HYBRID COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSIS...

VERTICAL FIELD-EFFECT TRANSISTOR WITH DIELECTRIC FIN EXTENSION

AUTOMATIC GENERATION OF GROUND RULE VERIFICATION MACROS

PUNCH THROUGH STOPPER IN BULK FINFET DEVICE

FIN TOP HARD MASK FORMATION AFTER WAFER FLIPPING PROCESS

CAPACITOR-BASED SYNAPSE NETWORK STRUCTURE WITH METAL SHIELDING BETW...

FINFET COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) DEVICES

READ-ONLY MEMORY WITH VERTICAL TRANSISTORS

ANALOG NONVOLATILE MEMORY CELLS USING DOPANT ACTIVATION

FINFET COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) DEVICES

METHOD FOR MAKING SUPERIMPOSED TRANSISTORS

REDUCING GATE RESISTANCE IN STACKED VERTICAL TRANSPORT FIELD EFFECT...

CREATION OF STRESS IN THE CHANNEL OF A NANOSHEET TRANSISTOR