Teruhisa Ikuta

Person

Nara, JP

People

Patents Grantslast 30 patents

Information Patent Grant
ESD protective element and plasma display including the ESD protect...
- Patent number 8,823,106
- Issue date Sep 2, 2014
- Panasonic Corporation
- Teruhisa Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral insulated gate bipolar transistor having a retrograde dopin...
- Patent number 8,304,858
- Issue date Nov 6, 2012
- Panasonic Corporation
- Teruhisa Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral insulated gate bipolar transistor having a retrograde dopin...
- Patent number 8,093,131
- Issue date Jan 10, 2012
- Panasonic Corporation
- Teruhisa Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown voltage semiconductor device and fabrication method...
- Patent number 7,973,361
- Issue date Jul 5, 2011
- Panasonic Corporation
- Yoshinobu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral insulated gate bipolar transistor having a retrograde dopin...
- Patent number 7,944,022
- Issue date May 17, 2011
- Panasonic Corporation
- Teruhisa Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral insulated gate bipolar transistor having a retrograde dopin...
- Patent number 7,719,086
- Issue date May 18, 2010
- Panasonic Corporation
- Teruhisa Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,485,972
- Issue date Feb 3, 2009
- Panasonic Corporation
- Teruhisa Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 7,408,234
- Issue date Aug 5, 2008
- Matsushita Electric Industrial Co., Ltd.
- Hisao Ichijo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,342,283
- Issue date Mar 11, 2008
- Matsushita Electric Industrial Co., Ltd.
- Hisao Ichijo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral semiconductor device
- Patent number 7,323,747
- Issue date Jan 29, 2008
- Matsushita Electric Industrial, Co., Ltd.
- Teruhisa Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral semiconductor device and method for producing the same
- Patent number 7,238,987
- Issue date Jul 3, 2007
- Matsushita Electric Industrial Co., Ltd.
- Teruhisa Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,157,772
- Issue date Jan 2, 2007
- Matsushita Electric Industrial Co., Ltd.
- Hiroyoshi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage semiconductor device including a floating block
- Patent number 6,989,566
- Issue date Jan 24, 2006
- Matsushita Electric Industrial Co., Ltd.
- Masaaki Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage semiconductor device
- Patent number 6,750,506
- Issue date Jun 15, 2004
- Matsushita Electric Industrial Co., Ltd.
- Masaaki Noda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Lateral insulated gate bipolar transistor having a retrograde dopin...
- Publication number 20110169046
- Publication date Jul 14, 2011
- Panasonic Corporation
- Teruhisa Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTIVE ELEMENT, SEMICONDUCTOR DEVICE, AND PLASMA DISPLAY
- Publication number 20110169092
- Publication date Jul 14, 2011
- Teruhisa IKUTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL INSULATED GATE BIPOLAR TRANSISTOR HAVING A RETROGRADE DOPIN...
- Publication number 20110081751
- Publication date Apr 7, 2011
- PANASONIC CORPORATION
- Teruhisa Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral insulated gate bipolar transistor having a retrograde dopin...
- Publication number 20100213509
- Publication date Aug 26, 2010
- Panasonic Corporation
- Teruhisa Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL INSULATED GATE BIPOLAR TRANSISTOR HAVING A RETROGRADE DOPIN...
- Publication number 20080135972
- Publication date Jun 12, 2008
- Matsushita Electric Industrial Co., Ltd.
- Teruhisa Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral semiconductor device
- Publication number 20070075393
- Publication date Apr 5, 2007
- Matsushita Electric Industrial Co., Ltd.
- Teruhisa Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060255406
- Publication date Nov 16, 2006
- Matsushita Electric Industrial Co., Ltd.
- Hisao Ichijo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High breakdown voltage semiconductor device and fabrication method...
- Publication number 20060220130
- Publication date Oct 5, 2006
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Yoshinobu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060202240
- Publication date Sep 14, 2006
- Matsushita Electric Industrial Co., Ltd.
- Teruhisa Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral semiconductor device and method for producing the same
- Publication number 20060118902
- Publication date Jun 8, 2006
- Matsushita Electric Industrial Co., Ltd.
- Teruhisa Ikuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20060017105
- Publication date Jan 26, 2006
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Hiroyoshi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20060001122
- Publication date Jan 5, 2006
- Hisao Ichijo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage semiconductor device
- Publication number 20020179974
- Publication date Dec 5, 2002
- Masaaki Noda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage semiconductor device
- Publication number 20010004124
- Publication date Jun 21, 2001
- Masaaki Noda
- H01 - BASIC ELECTRIC ELEMENTS

Teruhisa Ikuta

Person

Patents Grantslast 30 patents

ESD protective element and plasma display including the ESD protect...

Lateral insulated gate bipolar transistor having a retrograde dopin...

Lateral insulated gate bipolar transistor having a retrograde dopin...

High breakdown voltage semiconductor device and fabrication method...

Lateral insulated gate bipolar transistor having a retrograde dopin...

Lateral insulated gate bipolar transistor having a retrograde dopin...

Semiconductor device

Semiconductor device and method for manufacturing the same

Semiconductor device

Lateral semiconductor device

Lateral semiconductor device and method for producing the same

Semiconductor device and method of fabricating the same

High-voltage semiconductor device including a floating block

High-voltage semiconductor device

Patents Applicationslast 30 patents

Lateral insulated gate bipolar transistor having a retrograde dopin...

ESD PROTECTIVE ELEMENT, SEMICONDUCTOR DEVICE, AND PLASMA DISPLAY

LATERAL INSULATED GATE BIPOLAR TRANSISTOR HAVING A RETROGRADE DOPIN...

Lateral insulated gate bipolar transistor having a retrograde dopin...

LATERAL INSULATED GATE BIPOLAR TRANSISTOR HAVING A RETROGRADE DOPIN...

Lateral semiconductor device

Semiconductor device

High breakdown voltage semiconductor device and fabrication method...

Semiconductor device

Lateral semiconductor device and method for producing the same

Semiconductor device and method of fabricating the same

Semiconductor device and method for manufacturing the same

High-voltage semiconductor device

High-voltage semiconductor device