Tetsu Oi

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Lithium oxide based amorphous material and process for preparation...
- Patent number 4,390,460
- Issue date Jun 28, 1983
- Hitachi, Ltd.
- Katsuki Miyauchi
- G02 - OPTICS
Information Patent Grant
Amorphous lithium fluoaluminate
- Patent number 4,367,267
- Issue date Jan 4, 1983
- Hitachi, Ltd.
- Tetsu Oi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Scintillator with ZnWO.sub.4 single crystal
- Patent number 4,365,155
- Issue date Dec 21, 1982
- Hitachi, Ltd.
- Tetsu Oi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a pipe-shaped single crystal
- Patent number 4,323,418
- Issue date Apr 6, 1982
- Hitachi, Ltd.
- Toshio Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing ferrite single crystals
- Patent number 4,305,777
- Issue date Dec 15, 1981
- Hitachi, Ltd.
- Toshio Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal for scintillator
- Patent number 4,279,772
- Issue date Jul 21, 1981
- Hitachi Chemical Company, Ltd.
- Kazumasa Takagi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabrication of rear chip for hall effect magnetic head
- Patent number 4,186,481
- Issue date Feb 5, 1980
- Hitachi, Ltd.
- Takaharu Noguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for producing an InSb thin film element
- Patent number 4,177,298
- Issue date Dec 4, 1979
- Hitachi, Ltd.
- Junji Shigeta
- C30 - CRYSTAL GROWTH

Person

Patents Grantslast 30 patents

Lithium oxide based amorphous material and process for preparation...

Amorphous lithium fluoaluminate

Scintillator with ZnWO.sub.4 single crystal

Method for growing a pipe-shaped single crystal

Method of producing ferrite single crystals

Crystal for scintillator

Method for fabrication of rear chip for hall effect magnetic head

Method for producing an InSb thin film element