Tetsuji Nagayama

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing semiconductor device
- Patent number 6,057,243
- Issue date May 2, 2000
- Sony Corporation
- Tetsuji Nagayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming connection hole
- Patent number 5,997,757
- Issue date Dec 7, 1999
- Sony Corporation
- Tetsuji Nagayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device in which an anti-reflective layer is formed by...
- Patent number 5,831,321
- Issue date Nov 3, 1998
- Sony Corporation
- Tetsuji Nagayama
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method for forming a semiconductor device in which an anti reflecti...
- Patent number 5,674,356
- Issue date Oct 7, 1997
- Sony Corporation
- Tetsuji Nagayama
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Multilayer resist pattern forming method
- Patent number 5,632,910
- Issue date May 27, 1997
- Sony Corporation
- Tetsuji Nagayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry etching method
- Patent number 5,419,809
- Issue date May 30, 1995
- Sony Corporation
- Tetsuji Nagayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor device
- Patent number 5,378,311
- Issue date Jan 3, 1995
- Sony Corporation
- Tetsuji Nagayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor device using a hydrogen-enriched...
- Patent number 5,369,061
- Issue date Nov 29, 1994
- Sony Corporation
- Tetsuji Nagayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry etching method for W polycide using sulfur deposition
- Patent number 5,368,686
- Issue date Nov 29, 1994
- Sony Corporation
- Tetsuya Tatsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry etching method
- Patent number 5,354,421
- Issue date Oct 11, 1994
- Sony Corporation
- Tetsuya Tatsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry etching method
- Patent number 5,268,070
- Issue date Dec 7, 1993
- Sony Corporation
- Tetsuji Nagayama
- H01 - BASIC ELECTRIC ELEMENTS

Tetsuji Nagayama

Person

Patents Grantslast 30 patents

Method for producing semiconductor device

Method of forming connection hole

Semiconductor device in which an anti-reflective layer is formed by...

Method for forming a semiconductor device in which an anti reflecti...

Multilayer resist pattern forming method

Dry etching method

Method of producing semiconductor device

Method of producing semiconductor device using a hydrogen-enriched...

Dry etching method for W polycide using sulfur deposition

Dry etching method

Dry etching method