Tetsuji Ueno

Person

Suwon-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having analog transistor with improved operati...
- Patent number 8,445,968
- Issue date May 21, 2013
- Samsung Electronics Co., Ltd.
- Tetsuji Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including field effect transistor and method o...
- Patent number 8,338,261
- Issue date Dec 25, 2012
- Samsung Electronics Co., Ltd.
- Myung-Sun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having analog transistor with improved operati...
- Patent number 7,952,147
- Issue date May 31, 2011
- Samsung Electronics Co., Ltd.
- Tetsuji Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including field effect transistor and method o...
- Patent number 7,791,146
- Issue date Sep 7, 2010
- Samsung Electronics Co., Ltd.
- Myung-Sun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an epitaxial semiconductor substrate and me...
- Patent number 7,776,723
- Issue date Aug 17, 2010
- Samsung Electronics Co., Ltd.
- Ho Lee
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor device
- Patent number 7,728,393
- Issue date Jun 1, 2010
- Samsung Electronics Co., Ltd.
- Hwa-Sung Rhee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an at least penta-sided-channel type of FinFET tr...
- Patent number 7,723,193
- Issue date May 25, 2010
- Samsung Electronics Co., Ltd.
- Hwa-Sung Rhee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS semiconductor devices having elevated source and drain regions...
- Patent number 7,714,394
- Issue date May 11, 2010
- Samsung Electronics Co., Ltd.
- Dong-Suk Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming NMOS/PMOS transistors with source/drains includi...
- Patent number 7,682,888
- Issue date Mar 23, 2010
- Samsung Electronics Co., Ltd.
- Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having faceted channels and methods of fabric...
- Patent number 7,671,420
- Issue date Mar 2, 2010
- Samsung Electronics Co., Ltd.
- Dong-Suk Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating CMOS transistor and CMOS transistor fabricate...
- Patent number 7,619,285
- Issue date Nov 17, 2009
- Samsung Electronics Co., Ltd.
- Dong-Suk Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating MOS transistor having epitaxial region
- Patent number 7,611,951
- Issue date Nov 3, 2009
- Samsung Electronics Co., Ltd.
- Tetsuji Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of selectively forming epitaxial semiconductor layer on sin...
- Patent number 7,611,973
- Issue date Nov 3, 2009
- Samsung Electronics Co., Ltd.
- Dong-Suk Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and method of manufacturing the same
- Patent number 7,601,983
- Issue date Oct 13, 2009
- Samsung Electronics Co., Ltd.
- Tetsuji Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming MOS transistor having fully silicided metal gate...
- Patent number 7,582,535
- Issue date Sep 1, 2009
- Samsung Electronics Co., Ltd.
- Seung-Hwan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors for semiconductor device and methods of fabricating the...
- Patent number 7,439,596
- Issue date Oct 21, 2008
- SAMSUNG ELECTRONICS CO, LTD.
- Jae-Yoon Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
At least penta-sided-channel type of FinFET transistor
- Patent number 7,385,247
- Issue date Jun 10, 2008
- Samsung Electronics Co., Ltd.
- Hwa-Sung Rhee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having carbon-containing metal silicide layer...
- Patent number 7,365,010
- Issue date Apr 29, 2008
- Samsung Electronics Co., Ltd.
- Hwa-sung Rhee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating a semiconductor device using a selective epi...
- Patent number 7,361,563
- Issue date Apr 22, 2008
- Samsung Electronics Co., Ltd.
- Dong-Suk Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating CMOS transistor and CMOS transistor fabricate...
- Patent number 7,354,835
- Issue date Apr 8, 2008
- Samsung Electronics Co., Ltd.
- Dong-Suk Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors having reinforcement layer patterns and methods of form...
- Patent number 7,307,274
- Issue date Dec 11, 2007
- Samsung Electronics Co., Ltd.
- Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING ANALOG TRANSISTOR WITH IMPROVED OPERATI...
- Publication number 20130249016
- Publication date Sep 26, 2013
- Tetsuji Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING ANALOG TRANSISTOR WITH IMPROVED OPERATI...
- Publication number 20110233611
- Publication date Sep 29, 2011
- Samsung Electronics Co., Ltd.
- Tetsuji Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTOR AND METHOD O...
- Publication number 20100304543
- Publication date Dec 2, 2010
- Myung-Sun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
At least penta-sided-channel type of finfet transistor
- Publication number 20080242010
- Publication date Oct 2, 2008
- Hwa-Sung Rhee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING CMOS TRANSISTOR AND CMOS TRANSISTOR FABRICATE...
- Publication number 20080135879
- Publication date Jun 12, 2008
- Samsung Electronics Co., Ltd.
- Dong-suk Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BARRIER REGION AND METHOD...
- Publication number 20080121992
- Publication date May 29, 2008
- Samsung Electronics Co., Ltd.
- Ji-hye Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including field effect transistor and method o...
- Publication number 20080067545
- Publication date Mar 20, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Hwa-sung Rhee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Field Effct Transistor and Method of...
- Publication number 20080067609
- Publication date Mar 20, 2008
- Myung-Sun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having analog transistor with improved operati...
- Publication number 20080036006
- Publication date Feb 14, 2008
- Tetsuji Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Including Impurity Doped Region and Methods o...
- Publication number 20080006887
- Publication date Jan 10, 2008
- Tetsuji Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices with Stressed Channel Regions and methods For...
- Publication number 20070057320
- Publication date Mar 15, 2007
- Tetsuji Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating MOS transistor having epitaxial region
- Publication number 20070054457
- Publication date Mar 8, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Tetsuji Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming NMOS/PMOS transistors with source/drains includi...
- Publication number 20070048907
- Publication date Mar 1, 2007
- Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20070023847
- Publication date Feb 1, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Hwa-sung Rhee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low defect epitaxial semiconductor substrate having gettering funct...
- Publication number 20070020893
- Publication date Jan 25, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Tetsuji Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing an epitaxial semiconductor substrate and me...
- Publication number 20060175613
- Publication date Aug 10, 2006
- Ho Lee
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Method of manufacturing semiconductor device
- Publication number 20060172501
- Publication date Aug 3, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Tetsuji Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices having faceted channels and methods of fabric...
- Publication number 20060148154
- Publication date Jul 6, 2006
- Dong-Suk Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS semiconductor devices having elevated source and drain regions...
- Publication number 20060131656
- Publication date Jun 22, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Dong-Suk Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having carbon-containing metal silicide layer...
- Publication number 20060121660
- Publication date Jun 8, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Hwa-sung Rhee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of fabricating a semiconductor device using a selective epi...
- Publication number 20060088968
- Publication date Apr 27, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Dong-Suk Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor and method of manufacturing the same
- Publication number 20060038230
- Publication date Feb 23, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Tetsuji Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors having reinforcement layer patterns and methods of form...
- Publication number 20060038200
- Publication date Feb 23, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor and method of manufacturing the same
- Publication number 20060038243
- Publication date Feb 23, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Tetsuji Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming MOS transistor having fully silicided metal gate...
- Publication number 20060008961
- Publication date Jan 12, 2006
- SAMSUNG ELECTRONICS CO., LTD.
- Seung-Hwan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of selectively forming epitaxial semiconductor layer on sin...
- Publication number 20050279997
- Publication date Dec 22, 2005
- SAMSUNG ELECTRONICS CO., LTD.
- Dong-Suk Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating CMOS transistor and CMOS transistor fabricate...
- Publication number 20050280098
- Publication date Dec 22, 2005
- SAMSUNG ELECTRONICS CO., LTD.
- Dong-suk Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors for semiconductor device and methods of fabricating the...
- Publication number 20050170620
- Publication date Aug 4, 2005
- Jae-Yoon Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
At least penta-sided-channel type of FinFET transistor
- Publication number 20050156202
- Publication date Jul 21, 2005
- Hwa-Sung Rhee
- H01 - BASIC ELECTRIC ELEMENTS

Tetsuji Ueno

Person

Patents Grantslast 30 patents

Semiconductor device having analog transistor with improved operati...

Semiconductor device including field effect transistor and method o...

Semiconductor device having analog transistor with improved operati...

Semiconductor device including field effect transistor and method o...

Method of manufacturing an epitaxial semiconductor substrate and me...

Semiconductor device

Method of forming an at least penta-sided-channel type of FinFET tr...

CMOS semiconductor devices having elevated source and drain regions...

Methods of forming NMOS/PMOS transistors with source/drains includi...

Semiconductor devices having faceted channels and methods of fabric...

Method of fabricating CMOS transistor and CMOS transistor fabricate...

Method of fabricating MOS transistor having epitaxial region

Methods of selectively forming epitaxial semiconductor layer on sin...

Transistor and method of manufacturing the same

Method of forming MOS transistor having fully silicided metal gate...

Transistors for semiconductor device and methods of fabricating the...

At least penta-sided-channel type of FinFET transistor

Semiconductor device having carbon-containing metal silicide layer...

Methods of fabricating a semiconductor device using a selective epi...

Method of fabricating CMOS transistor and CMOS transistor fabricate...

Transistors having reinforcement layer patterns and methods of form...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING ANALOG TRANSISTOR WITH IMPROVED OPERATI...

SEMICONDUCTOR DEVICE HAVING ANALOG TRANSISTOR WITH IMPROVED OPERATI...

SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTOR AND METHOD O...

At least penta-sided-channel type of finfet transistor

METHOD OF FABRICATING CMOS TRANSISTOR AND CMOS TRANSISTOR FABRICATE...

SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BARRIER REGION AND METHOD...

Semiconductor device including field effect transistor and method o...

Semiconductor Device Including Field Effct Transistor and Method of...

Semiconductor device having analog transistor with improved operati...

Semiconductor Devices Including Impurity Doped Region and Methods o...

Semiconductor Devices with Stressed Channel Regions and methods For...

Method of fabricating MOS transistor having epitaxial region

Methods of forming NMOS/PMOS transistors with source/drains includi...

Semiconductor device and method of manufacturing the same

Low defect epitaxial semiconductor substrate having gettering funct...

Method of manufacturing an epitaxial semiconductor substrate and me...

Method of manufacturing semiconductor device

Semiconductor devices having faceted channels and methods of fabric...

CMOS semiconductor devices having elevated source and drain regions...

Semiconductor device having carbon-containing metal silicide layer...

Methods of fabricating a semiconductor device using a selective epi...

Transistor and method of manufacturing the same

Transistors having reinforcement layer patterns and methods of form...

Transistor and method of manufacturing the same

Method of forming MOS transistor having fully silicided metal gate...

Methods of selectively forming epitaxial semiconductor layer on sin...

Method of fabricating CMOS transistor and CMOS transistor fabricate...

Transistors for semiconductor device and methods of fabricating the...

At least penta-sided-channel type of FinFET transistor