Tetsuo NARITA

Person

Nagakute-city, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,677,005
- Issue date Jun 13, 2023
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Taishi Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor device and method of manufacturing...
- Patent number 11,101,351
- Issue date Aug 24, 2021
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Keita Kataoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor substrate
- Patent number 10,868,124
- Issue date Dec 15, 2020
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Hiroko Iguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method of manufacturing nitride se...
- Patent number 10,763,333
- Issue date Sep 1, 2020
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Kazuyoshi Tomita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing same
- Patent number 10,121,663
- Issue date Nov 6, 2018
- Denso Corporation
- Yoshinori Tsuchiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered substrate with a miscut angle comprising a silicon single c...
- Patent number 9,728,609
- Issue date Aug 8, 2017
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Tetsuo Narita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method of manufacturing a support layer
- Patent number 9,536,996
- Issue date Jan 3, 2017
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Hirofumi Funabashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,337,267
- Issue date May 10, 2016
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Tsutomu Uesugi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210134962
- Publication date May 6, 2021
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Taishi KIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SE...
- Publication number 20190305090
- Publication date Oct 3, 2019
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Kazuyoshi TOMITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING...
- Publication number 20190245045
- Publication date Aug 8, 2019
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Keita KATAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20190181230
- Publication date Jun 13, 2019
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Hiroko IGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE SWITCHING DEVICE AND METHOD MANUFACTURING THE SAME
- Publication number 20190019873
- Publication date Jan 17, 2019
- Toyota Jidosha Kabushiki Kaisha
- Koji SHIOZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20170162391
- Publication date Jun 8, 2017
- Denso Corporation
- Yoshinori TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD OF MANUFACTURING THE SAME
- Publication number 20160043066
- Publication date Feb 11, 2016
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Hirofumi FUNABASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150221759
- Publication date Aug 6, 2015
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Tsutomu UESUGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYERED SUBSTRATE WITH A MISCUT ANGLE COMPRISING A SILICON SINGLE C...
- Publication number 20150053996
- Publication date Feb 26, 2015
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Tetsuo Narita
- C30 - CRYSTAL GROWTH

Tetsuo NARITA

Person

Patents Grantslast 30 patents

Semiconductor device and method for manufacturing the same

Group III nitride semiconductor device and method of manufacturing...

Group III nitride semiconductor substrate

Nitride semiconductor device and method of manufacturing nitride se...

Semiconductor device and method for producing same

Layered substrate with a miscut angle comprising a silicon single c...

Apparatus and method of manufacturing a support layer

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SE...

GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING...

GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

GATE SWITCHING DEVICE AND METHOD MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

APPARATUS AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

LAYERED SUBSTRATE WITH A MISCUT ANGLE COMPRISING A SILICON SINGLE C...