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Tetsuya Nakai
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Saitama, JP
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last 30 patents
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Patent Grant
Method of removing defects of single crystal material and single cr...
Patent number
6,447,600
Issue date
Sep 10, 2002
Mitsubishi Materials Silicon Corporation
Jun Furukawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
SOI substrate having monocrystal silicon layer on insulating film
Patent number
5,891,265
Issue date
Apr 6, 1999
Mitsubishi Denki Kabushiki Kaisha
Tetsuya Nakai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing a SOI substrate having a monocrystalline si...
Patent number
5,741,717
Issue date
Apr 21, 1998
Mitsubishi Denki Kabushiki Kaisha
Tetsuya Nakai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing substrate having semiconductor on insulator
Patent number
5,616,507
Issue date
Apr 1, 1997
Mitsubishi Denki Kabushiki Kaisha
Tetsuya Nakai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing substrate having semiconductor on insulator
Patent number
5,441,899
Issue date
Aug 15, 1995
Mitsubishi Denki Kabushiki Kaisha
Tetsuya Nakai
H01 - BASIC ELECTRIC ELEMENTS