Tetsuya Taki

Person

Aichi-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group III intride semiconductor light emitting element
- Patent number 8,076,684
- Issue date Dec 13, 2011
- Toyoda Gosei Co., Ltd.
- Tetsuya Taki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group III nitride-based compound semiconductor light-emitting devic...
- Patent number 7,629,619
- Issue date Dec 8, 2009
- Toyota Gosei Co., Ltd.
- Tetsuya Taki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor light-emitting device and...
- Patent number 7,244,957
- Issue date Jul 17, 2007
- Toyoda Gosei Co., Ltd
- Naoki Nakajo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN based semiconductor light emitting device and method of making...
- Patent number 7,190,001
- Issue date Mar 13, 2007
- Toyoda Gosei Co., Ltd.
- Tetsuya Taki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing p-type group III nitride compound semiconductor
- Patent number 7,041,519
- Issue date May 9, 2006
- Toyoda Gosei Co., Ltd.
- Tetsuya Taki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device having a superlatti...
- Patent number 7,015,515
- Issue date Mar 21, 2006
- Toyoda Gosei Co., Ltd.
- Tetsuya Taki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting element
- Patent number 6,965,126
- Issue date Nov 15, 2005
- Toyoda Gosei Co., Ltd
- Tetsuya Taki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Group III intride semiconductor light emitting element
- Publication number 20070241353
- Publication date Oct 18, 2007
- Toyoda Gosei Co., Ltd.
- Tetsuya Taki
- B82 - NANO-TECHNOLOGY
Information Patent Application
Group III nitride-based compound semiconductor light-emitting devic...
- Publication number 20060169990
- Publication date Aug 3, 2006
- Toyoda Gosei Co., Ltd.
- Tetsuya Taki
- B82 - NANO-TECHNOLOGY
Information Patent Application
Group III-nitride-based compound semiconductor device
- Publication number 20060097283
- Publication date May 11, 2006
- Tetsuya Taki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor light-emitting device and...
- Publication number 20050277218
- Publication date Dec 15, 2005
- Toyoda Gosei Co., Ltd.
- Naoki Nakajo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for fabrication of III nitride-based compound semiconductors
- Publication number 20050076828
- Publication date Apr 14, 2005
- Toyoda Gosei Co., Ltd.
- Tetsuya Taki
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN based semiconductor light emitting device and method of making...
- Publication number 20050056850
- Publication date Mar 17, 2005
- Toyoda Gosei Co., Ltd.
- Tetsuya Taki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing p-type Group III nitride compound semiconductor
- Publication number 20040058465
- Publication date Mar 25, 2004
- TOYODA GOSEI CO., LTD
- Tetsuya Taki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting element
- Publication number 20030001165
- Publication date Jan 2, 2003
- Tetsuya Taki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing group III nitride compound semiconductor device
- Publication number 20020197827
- Publication date Dec 26, 2002
- Tetsuya Taki
- C30 - CRYSTAL GROWTH

Tetsuya Taki

Person

Patents Grantslast 30 patents

Group III intride semiconductor light emitting element

Group III nitride-based compound semiconductor light-emitting devic...

Group III nitride compound semiconductor light-emitting device and...

GaN based semiconductor light emitting device and method of making...

Method for producing p-type group III nitride compound semiconductor

Group III nitride compound semiconductor device having a superlatti...

Light-emitting element

Patents Applicationslast 30 patents

Group III intride semiconductor light emitting element

Group III nitride-based compound semiconductor light-emitting devic...

Group III-nitride-based compound semiconductor device

Group III nitride compound semiconductor light-emitting device and...

Process for fabrication of III nitride-based compound semiconductors

GaN based semiconductor light emitting device and method of making...

Method for producing p-type Group III nitride compound semiconductor

Light-emitting element

Method for producing group III nitride compound semiconductor device