Thai Doan

Person

Burlington, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Deep trench isolation structures
- Patent number 10,224,396
- Issue date Mar 5, 2019
- GLOBALFOUNDRIES Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switches with deep trench depletion and isolation structures
- Patent number 9,922,973
- Issue date Mar 20, 2018
- GLOBALFOUNDRIES Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar cavity MEMS and related structures, methods of manufacture a...
- Patent number 9,406,472
- Issue date Aug 2, 2016
- GLOBALFOUNDRIES Inc.
- Dinh Dang
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Transistor and method of forming the transistor so as to have reduc...
- Patent number 8,846,481
- Issue date Sep 30, 2014
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar cavity MEMS and related structures, methods of manufacture a...
- Patent number 8,722,445
- Issue date May 13, 2014
- International Business Machines Corporation
- Dinh Dang
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
SOI substrate contact with extended silicide area
- Patent number 7,939,896
- Issue date May 10, 2011
- International Business Machines Corporation
- Dinh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI substrate contact with extended silicide area
- Patent number 7,675,121
- Issue date Mar 9, 2010
- International Business Machines Corporation
- Dinh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a recessed polysilicon filled trench
- Patent number 6,559,030
- Issue date May 6, 2003
- International Business Machines Corporation
- Thai Doan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTROSTATIC SUBSTRATE HOLDER WITH NON-PLANAR SURFACE AND METHOD O...
- Publication number 20170069518
- Publication date Mar 9, 2017
- GLOBALFOUNDRIES INC.
- Brett Cucci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD OF FORMING THE TRANSISTOR SO AS TO HAVE REDUC...
- Publication number 20140113426
- Publication date Apr 24, 2014
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD OF FORMING THE TRANSISTOR SO AS TO HAVE REDUC...
- Publication number 20120313146
- Publication date Dec 13, 2012
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE A...
- Publication number 20110315527
- Publication date Dec 29, 2011
- International Business Machines Corporation
- Dinh DANG
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE A...
- Publication number 20110316101
- Publication date Dec 29, 2011
- International Business Machines Corporation
- Dinh DANG
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA
- Publication number 20100084736
- Publication date Apr 8, 2010
- International Business Machines Corporation
- Dinh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA
- Publication number 20090093092
- Publication date Apr 9, 2009
- Dinh Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA
- Publication number 20090090970
- Publication date Apr 9, 2009
- Dinh Dang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Deep trench isolation structures

Switches with deep trench depletion and isolation structures

Planar cavity MEMS and related structures, methods of manufacture a...

Transistor and method of forming the transistor so as to have reduc...

Planar cavity MEMS and related structures, methods of manufacture a...

SOI substrate contact with extended silicide area

SOI substrate contact with extended silicide area

Method of forming a recessed polysilicon filled trench

Patents Applicationslast 30 patents

ELECTROSTATIC SUBSTRATE HOLDER WITH NON-PLANAR SURFACE AND METHOD O...

TRANSISTOR AND METHOD OF FORMING THE TRANSISTOR SO AS TO HAVE REDUC...

TRANSISTOR AND METHOD OF FORMING THE TRANSISTOR SO AS TO HAVE REDUC...

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE A...

PLANAR CAVITY MEMS AND RELATED STRUCTURES, METHODS OF MANUFACTURE A...

SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA

SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA

SOI SUBSTRATE CONTACT WITH EXTENDED SILICIDE AREA