Thamarai S. Devarajan

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
High aspect ratio buried power rail metallization
- Patent number 12,148,699
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Sagarika Mukesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approach to bottom dielectric isolation for vertical transport fin...
- Patent number 11,302,797
- Issue date Apr 12, 2022
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon residue removal in nanosheet transistors
- Patent number 10,896,816
- Issue date Jan 19, 2021
- International Business Machines Corporation
- Zhenxing Bi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Approach to bottom dielectric isolation for vertical transport fin...
- Patent number 10,840,354
- Issue date Nov 17, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approach to bottom dielectric isolation for vertical transport fin...
- Patent number 10,629,702
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin type field effect transistors with different pitches and substa...
- Patent number 10,388,571
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybridization fin reveal for uniform fin reveal depth across differ...
- Patent number 10,366,928
- Issue date Jul 30, 2019
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer formation on semiconductor device
- Patent number 10,355,109
- Issue date Jul 16, 2019
- International Business Machines Corporation
- Thamarai Selvi Devarajan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cyclic etch process to remove dummy gate oxide layer for fin field...
- Patent number 10,242,882
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybridization fin reveal for uniform fin reveal depth across differ...
- Patent number 10,163,721
- Issue date Dec 25, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin type field effect transistors with different pitches and substa...
- Patent number 10,020,229
- Issue date Jul 10, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon residue removal in nanosheet MOSFETs
- Patent number 9,997,352
- Issue date Jun 12, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybridization fin reveal for uniform fin reveal depth across differ...
- Patent number 9,935,015
- Issue date Apr 3, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer formation on semiconductor device
- Patent number 9,911,831
- Issue date Mar 6, 2018
- International Business Machines Corporation
- Thamarai Selvi Devarajan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybridization fin reveal for uniform fin reveal depth across differ...
- Patent number 9,754,798
- Issue date Sep 5, 2017
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin type field effect transistors with different pitches and substa...
- Patent number 9,691,765
- Issue date Jun 27, 2017
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon residue removal in nanosheet MOSFETs
- Patent number 9,679,780
- Issue date Jun 13, 2017
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer formation on semiconductor device
- Patent number 9,443,855
- Issue date Sep 13, 2016
- International Business Machines Corporation
- Thamarai Selvi Devarajan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH ASPECT RATIO BURIED POWER RAIL METALLIZATION
- Publication number 20230402378
- Publication date Dec 14, 2023
- International Business Machines Corporation
- Sagarika Mukesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE PATTERNED MICROCOOLER HAVING ALTERNATING FIN WIDTHS
- Publication number 20230163039
- Publication date May 25, 2023
- International Business Machines Corporation
- Fee Li Lie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPROACH TO BOTTOM DIELECTRIC ISOLATION FOR VERTICAL TRANSPORT FIN...
- Publication number 20200212202
- Publication date Jul 2, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON RESIDUE REMOVAL IN NANOSHEET TRANSISTORS
- Publication number 20190096669
- Publication date Mar 28, 2019
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CYCLIC ETCH PROCESS TO REMOVE DUMMY GATE OXIDE LAYER FOR FIN FIELD...
- Publication number 20180358232
- Publication date Dec 13, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN TYPE FIELD EFFECT TRANSISTORS WITH DIFFERENT PITCHES AND SUBSTA...
- Publication number 20180269108
- Publication date Sep 20, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPROACH TO BOTTOM DIELECTRIC ISOLATION FOR VERTICAL TRANSPORT FIN...
- Publication number 20180226491
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPROACH TO BOTTOM DIELECTRIC ISOLATION FOR VERTICAL TRANSPORT FIN...
- Publication number 20180226489
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRIDIZATION FIN REVEAL FOR UNIFORM FIN REVEAL DEPTH ACROSS DIFFER...
- Publication number 20180090367
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRIDIZATION FIN REVEAL FOR UNIFORM FIN REVEAL DEPTH ACROSS DIFFER...
- Publication number 20180090385
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRIDIZATION FIN REVEAL FOR UNIFORM FIN REVEAL DEPTH ACROSS DIFFER...
- Publication number 20180090384
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON RESIDUE REMOVAL IN NANOSHEET MOSFETS
- Publication number 20180090315
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER FORMATION ON SEMICONDUCTOR DEVICE
- Publication number 20180076302
- Publication date Mar 15, 2018
- International Business Machines Corporation
- Thamarai Selvi Devarajan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN TYPE FIELD EFFECT TRANSISTORS WITH DIFFERENT PITCHES AND SUBSTA...
- Publication number 20170263503
- Publication date Sep 14, 2017
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER FORMATION ON SEMICONDUCTOR DEVICE
- Publication number 20170170301
- Publication date Jun 15, 2017
- International Business Machines Corporation
- Thamarai Selvi Devarajan
- H01 - BASIC ELECTRIC ELEMENTS

Thamarai S. Devarajan

Person

Patents Grantslast 30 patents

High aspect ratio buried power rail metallization

Approach to bottom dielectric isolation for vertical transport fin...

Silicon residue removal in nanosheet transistors

Approach to bottom dielectric isolation for vertical transport fin...

Approach to bottom dielectric isolation for vertical transport fin...

Fin type field effect transistors with different pitches and substa...

Hybridization fin reveal for uniform fin reveal depth across differ...

Spacer formation on semiconductor device

Cyclic etch process to remove dummy gate oxide layer for fin field...

Hybridization fin reveal for uniform fin reveal depth across differ...

Fin type field effect transistors with different pitches and substa...

Polysilicon residue removal in nanosheet MOSFETs

Hybridization fin reveal for uniform fin reveal depth across differ...

Spacer formation on semiconductor device

Hybridization fin reveal for uniform fin reveal depth across differ...

Fin type field effect transistors with different pitches and substa...

Polysilicon residue removal in nanosheet MOSFETs

Spacer formation on semiconductor device

Patents Applicationslast 30 patents

HIGH ASPECT RATIO BURIED POWER RAIL METALLIZATION

DOUBLE PATTERNED MICROCOOLER HAVING ALTERNATING FIN WIDTHS

APPROACH TO BOTTOM DIELECTRIC ISOLATION FOR VERTICAL TRANSPORT FIN...

SILICON RESIDUE REMOVAL IN NANOSHEET TRANSISTORS

CYCLIC ETCH PROCESS TO REMOVE DUMMY GATE OXIDE LAYER FOR FIN FIELD...

FIN TYPE FIELD EFFECT TRANSISTORS WITH DIFFERENT PITCHES AND SUBSTA...

APPROACH TO BOTTOM DIELECTRIC ISOLATION FOR VERTICAL TRANSPORT FIN...

APPROACH TO BOTTOM DIELECTRIC ISOLATION FOR VERTICAL TRANSPORT FIN...

HYBRIDIZATION FIN REVEAL FOR UNIFORM FIN REVEAL DEPTH ACROSS DIFFER...

HYBRIDIZATION FIN REVEAL FOR UNIFORM FIN REVEAL DEPTH ACROSS DIFFER...

HYBRIDIZATION FIN REVEAL FOR UNIFORM FIN REVEAL DEPTH ACROSS DIFFER...

POLYSILICON RESIDUE REMOVAL IN NANOSHEET MOSFETS

SPACER FORMATION ON SEMICONDUCTOR DEVICE

FIN TYPE FIELD EFFECT TRANSISTORS WITH DIFFERENT PITCHES AND SUBSTA...

SPACER FORMATION ON SEMICONDUCTOR DEVICE