Theodore G. Hollinger

Person

Bend, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for controlling electrical breakdown in semiconductor power...
- Patent number 5,434,095
- Issue date Jul 18, 1995
- Sundstrand Corporation
- Theodore G. Hollinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask surrogate semiconductor process with polysilicon gate protection
- Patent number 5,256,583
- Issue date Oct 26, 1993
- Advanced Power Technology, Inc.
- Theodore G. Hollinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with doped electrical breakdown control region
- Patent number 5,231,474
- Issue date Jul 27, 1993
- Advanced Power Technology, Inc.
- Theodore G. Hollinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask surrogate semiconductor process employing dopant-opaque region
- Patent number 5,089,434
- Issue date Feb 18, 1992
- Advanced Power Technology, Inc.
- Theodore G. Hollinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Topographic pattern delineated power MOSFET with profile tailored r...
- Patent number 5,045,903
- Issue date Sep 3, 1991
- Advanced Power Technology, Inc.
- Theodore O. Meyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making topographic pattern delineated power MOSFET with p...
- Patent number 5,019,522
- Issue date May 28, 1991
- Advanced Power Technology, Inc.
- Theodore O. Meyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Frequency-independent single-phase to three-phase AC power conversion
- Patent number 4,908,744
- Issue date Mar 13, 1990
- APC-Onsite, Inc.
- Theodore G. Hollinger
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Frequency-dependent single-phase to three-phase AC power conversion
- Patent number 4,899,268
- Issue date Feb 6, 1990
- APC-Onsite, Inc.
- Theodore G. Hollinger
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Iopographic pattern delineated power mosfet with profile tailored r...
- Patent number 4,895,810
- Issue date Jan 23, 1990
- Advanced Power Technology, Inc.
- Theodore O. Meyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor doping process
- Patent number 4,766,094
- Issue date Aug 23, 1988
- Theodore G. Hollinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask-surrogate semiconductor process employing dopant protective re...
- Patent number 4,748,103
- Issue date May 31, 1988
- Advanced Power Technology
- Theodore G. Hollinger
- H01 - BASIC ELECTRIC ELEMENTS

Theodore G. Hollinger

Person

Patents Grantslast 30 patents

Method for controlling electrical breakdown in semiconductor power...

Mask surrogate semiconductor process with polysilicon gate protection

Semiconductor device with doped electrical breakdown control region

Mask surrogate semiconductor process employing dopant-opaque region

Topographic pattern delineated power MOSFET with profile tailored r...

Method of making topographic pattern delineated power MOSFET with p...

Frequency-independent single-phase to three-phase AC power conversion

Frequency-dependent single-phase to three-phase AC power conversion

Iopographic pattern delineated power mosfet with profile tailored r...

Semiconductor doping process

Mask-surrogate semiconductor process employing dopant protective re...