Thierry Poiroux

Person

Voiron, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Computer implemented method for determining intrinsic parameter in...
- Patent number 10,914,703
- Issue date Feb 9, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Olivier Rozeau
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Computer implemented method for calculating a charge density at a g...
- Patent number 9,235,668
- Issue date Jan 12, 2016
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Thierry Poiroux
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Manufacturing method for a device with transistors strained by sili...
- Patent number 9,093,552
- Issue date Jul 28, 2015
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Fabrice Nemouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing an integrated circuit
- Patent number 8,877,622
- Issue date Nov 4, 2014
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Thierry Poiroux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with alternate electrical contacts
- Patent number 8,866,225
- Issue date Oct 21, 2014
- Commissariat a l'Energie Atomique
- Frederic Mayer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a device with transistors strained by means of...
- Patent number 8,664,104
- Issue date Mar 4, 2014
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Fabrice Nemouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an electromechanical component using graphene
- Patent number 8,656,584
- Issue date Feb 25, 2014
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Jean-Christophe Gabriel
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Process for producing two interleaved patterns on a substrate
- Patent number 8,598,038
- Issue date Dec 3, 2013
- Yves Morand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a strained channel MOS transistor
- Patent number 8,530,292
- Issue date Sep 10, 2013
- STMicroelectronics (Grenoble 2) SAS
- Yves Morand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making asymmetric double-gate transistors
- Patent number 8,399,316
- Issue date Mar 19, 2013
- Commissariat a l'Energie Atomique
- Maud Vinet
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for stabilizing germanium nanowires obtained by condensation
- Patent number 8,349,667
- Issue date Jan 8, 2013
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Emeline Saracco
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for fabricating asymmetric double-gate transistors by which...
- Patent number 8,324,057
- Issue date Dec 4, 2012
- Commissariat a l'Energie Atomique
- Maud Vinet
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for making asymmetric double-gate transistors by which asymm...
- Patent number 8,232,168
- Issue date Jul 31, 2012
- Commissariat a l'Energie Atomique
- Maud Vinet
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating asymmetric double-gate transistors by which...
- Patent number 8,105,906
- Issue date Jan 31, 2012
- Commissariat a l'Energie Atomique
- Maud Vinet
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for producing a transistor with metallic source and drain
- Patent number 8,021,986
- Issue date Sep 20, 2011
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Bernard Previtali
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for making a transistor with metallic source and drain
- Patent number 8,021,934
- Issue date Sep 20, 2011
- Commissariat a l'Energie Atomique
- Maud Vinet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic device provided with transistors coated with a piez...
- Patent number 7,968,945
- Issue date Jun 28, 2011
- Commissariat a l'Energie Atomique
- Jerome Lolivier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with a germanium-based channel encased by a gate electro...
- Patent number 7,829,916
- Issue date Nov 9, 2010
- Commissariat a l'Energie Atomique
- Yves Morand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for insulating patterns formed in a thin film of oxidizable...
- Patent number 7,473,588
- Issue date Jan 6, 2009
- Commissariat a l'Energie Atomique
- Maud Vinet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a component comprising at least one germanium-...
- Patent number 7,361,592
- Issue date Apr 22, 2008
- Commissariat a l'Energie Atomique
- Yves Morand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process and device for evaluating a CMOS logical cell
- Patent number 6,779,161
- Issue date Aug 17, 2004
- STMicroelectronics S.A.
- Thierry Poiroux
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
COMPUTER IMPLEMENTED METHOD FOR DETERMINING INTRINSIC PARAMETER IN...
- Publication number 20180156749
- Publication date Jun 7, 2018
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Olivier ROZEAU
- B82 - NANO-TECHNOLOGY
Information Patent Application
FDSOI-TYPE FIELD-EFFECT TRANSISTORS
- Publication number 20180097014
- Publication date Apr 5, 2018
- STMicroelectronics (Crolles 2) SAS
- Vincent Barral
- B82 - NANO-TECHNOLOGY
Information Patent Application
COMPUTER IMPLEMENTED METHOD FOR CALCULATING A CHARGE DENSITY AT A G...
- Publication number 20160019327
- Publication date Jan 21, 2016
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Thierry POIROUX
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROCESS FOR PRODUCING AN INTEGRATED CIRCUIT
- Publication number 20130252412
- Publication date Sep 26, 2013
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Thierry Poiroux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR A DEVICE WITH TRANSISTORS STRAINED BY SILI...
- Publication number 20130214363
- Publication date Aug 22, 2013
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Fabrice NEMOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A DEVICE WITH TRANSISTORS STRAINED BY MEANS OF...
- Publication number 20130214362
- Publication date Aug 22, 2013
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Fabrice NEMOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A STRAINED CHANNEL MOS TRANSISTOR
- Publication number 20120153394
- Publication date Jun 21, 2012
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Yves Morand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR PRODUCING TWO INTERLEAVED PATTERNS ON A SUBSTRATE
- Publication number 20120021606
- Publication date Jan 26, 2012
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Yves Morand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCEPTION OF AN ELECTRO-MECHANICAL COMPONENT FOR A MICRO- OR NANO-...
- Publication number 20110067985
- Publication date Mar 24, 2011
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Jean-Christophe GABRIEL
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
METHOD FOR STABILIZING GERMANIUM NANOWIRES OBTAINED BY CONDENSATION
- Publication number 20110059598
- Publication date Mar 10, 2011
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Emeline SARACCO
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR PRODUCING A TRANSISTOR WITH METALLIC SOURCE AND DRAIN
- Publication number 20110003443
- Publication date Jan 6, 2011
- COMMISS. A L'ENERGIE ATOM ET AUX ENERG ALTERNA
- Bernard Previtali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING ASYMMETRIC DOUBLE-GATE TRANSISTORS BY WHICH...
- Publication number 20100320541
- Publication date Dec 23, 2010
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Maud Vinet
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MAKING ASYMMETRIC DOUBLE-GATE TRANSISTORS BY WHICH ASYMM...
- Publication number 20100317167
- Publication date Dec 16, 2010
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Maud Vinet
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MAKING ASYMMETRIC DOUBLE-GATE TRANSISTORS
- Publication number 20100178743
- Publication date Jul 15, 2010
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Maud Vinet
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ALTERNATE ELECTRICAL CONTACTS
- Publication number 20100155843
- Publication date Jun 24, 2010
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Frederic Mayer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING ASYMMETRIC DOUBLE-GATE TRANSISTORS BY WHICH...
- Publication number 20100096700
- Publication date Apr 22, 2010
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Maud Vinet
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MAKING A TRANSISTOR WITH METALLIC SOURCE AND DRAIN
- Publication number 20090286363
- Publication date Nov 19, 2009
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Maud VINET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor with a germanium-based channel encased by a gate electro...
- Publication number 20090127584
- Publication date May 21, 2009
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Yves Morand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Microelectronic Device Provided with Transistors Coated with a Piez...
- Publication number 20080290384
- Publication date Nov 27, 2008
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Jerome Lolivier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing a component comprising at least one germanium-...
- Publication number 20060276052
- Publication date Dec 7, 2006
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Yves Morand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for insulating patterns formed in a thin film of oxidizable...
- Publication number 20060121653
- Publication date Jun 8, 2006
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Maud Vinet
- H01 - BASIC ELECTRIC ELEMENTS

Thierry Poiroux

Person

Patents Grantslast 30 patents

Computer implemented method for determining intrinsic parameter in...

Computer implemented method for calculating a charge density at a g...

Manufacturing method for a device with transistors strained by sili...

Process for producing an integrated circuit

Field effect transistor with alternate electrical contacts

Method of producing a device with transistors strained by means of...

Method of fabricating an electromechanical component using graphene

Process for producing two interleaved patterns on a substrate

Method for manufacturing a strained channel MOS transistor

Method for making asymmetric double-gate transistors

Method for stabilizing germanium nanowires obtained by condensation

Method for fabricating asymmetric double-gate transistors by which...

Method for making asymmetric double-gate transistors by which asymm...

Method for fabricating asymmetric double-gate transistors by which...

Method for producing a transistor with metallic source and drain

Method for making a transistor with metallic source and drain

Microelectronic device provided with transistors coated with a piez...

Transistor with a germanium-based channel encased by a gate electro...

Method for insulating patterns formed in a thin film of oxidizable...

Method for producing a component comprising at least one germanium-...

Process and device for evaluating a CMOS logical cell

Patents Applicationslast 30 patents

COMPUTER IMPLEMENTED METHOD FOR DETERMINING INTRINSIC PARAMETER IN...

FDSOI-TYPE FIELD-EFFECT TRANSISTORS

COMPUTER IMPLEMENTED METHOD FOR CALCULATING A CHARGE DENSITY AT A G...

PROCESS FOR PRODUCING AN INTEGRATED CIRCUIT

MANUFACTURING METHOD FOR A DEVICE WITH TRANSISTORS STRAINED BY SILI...

METHOD OF PRODUCING A DEVICE WITH TRANSISTORS STRAINED BY MEANS OF...

METHOD FOR MANUFACTURING A STRAINED CHANNEL MOS TRANSISTOR

PROCESS FOR PRODUCING TWO INTERLEAVED PATTERNS ON A SUBSTRATE

CONCEPTION OF AN ELECTRO-MECHANICAL COMPONENT FOR A MICRO- OR NANO-...

METHOD FOR STABILIZING GERMANIUM NANOWIRES OBTAINED BY CONDENSATION

METHOD FOR PRODUCING A TRANSISTOR WITH METALLIC SOURCE AND DRAIN

METHOD FOR FABRICATING ASYMMETRIC DOUBLE-GATE TRANSISTORS BY WHICH...

METHOD FOR MAKING ASYMMETRIC DOUBLE-GATE TRANSISTORS BY WHICH ASYMM...

METHOD FOR MAKING ASYMMETRIC DOUBLE-GATE TRANSISTORS

FIELD EFFECT TRANSISTOR WITH ALTERNATE ELECTRICAL CONTACTS

METHOD FOR FABRICATING ASYMMETRIC DOUBLE-GATE TRANSISTORS BY WHICH...

METHOD FOR MAKING A TRANSISTOR WITH METALLIC SOURCE AND DRAIN

Transistor with a germanium-based channel encased by a gate electro...

Microelectronic Device Provided with Transistors Coated with a Piez...

Method for producing a component comprising at least one germanium-...

Method for insulating patterns formed in a thin film of oxidizable...