Thierry Schwartzmann

Person

Le Versoud, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit comprising a gradually doped bipolar transistor...
- Patent number 8,168,504
- Issue date May 1, 2012
- STMicroelectronics S.A.
- Damien Lenoble
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit comprising a substrate and a resistor
- Patent number 7,714,390
- Issue date May 11, 2010
- STMicroelectronics S.A.
- Denis Cottin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit comprising a gradually doped bipolar transistor
- Patent number 7,705,427
- Issue date Apr 27, 2010
- STMicroelectronics S.A.
- Damien Lenoble
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor manufacturing method
- Patent number 6,864,542
- Issue date Mar 8, 2005
- STMicroelectronics S.A.
- Yvon Gris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure on a deep region formed in a semiconductor substrate
- Patent number 6,847,094
- Issue date Jan 25, 2005
- STMicroelectronics S.A.
- Thierry Schwartzmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a MOS transistor with a drain extension and c...
- Patent number 6,800,514
- Issue date Oct 5, 2004
- STMicroelectronics S.A.
- Thierry Schwartzmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried layer manufacturing method
- Patent number 6,689,672
- Issue date Feb 10, 2004
- STMicroelectronics S.A.
- Yvon Gris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor manufacturing method
- Patent number 6,607,960
- Issue date Aug 19, 2003
- STMicroelectronics S.A.
- Yvon Gris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selectively doping the intrinsic collector of a vertical...
- Patent number 6,265,275
- Issue date Jul 24, 2001
- STMicroelectronics S.A.
- Michel Marty
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT COMPRISING A GRADUALLY DOPED BIPOLAR TRANSISTOR...
- Publication number 20100167488
- Publication date Jul 1, 2010
- STMicroelectronics S.A.
- Damien Lenoble
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT COMPRISING A GRADUALLY DOPED BIPOLAR TRANSISTOR...
- Publication number 20070108555
- Publication date May 17, 2007
- STMicroelectronics S.A.
- Damien Lenoble
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit comprising a substrate and a resistor
- Publication number 20060226512
- Publication date Oct 12, 2006
- STMicroelectronics S.A.
- Denis Cottin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact structure on a deep region formed in a semiconductor substrate
- Publication number 20030042574
- Publication date Mar 6, 2003
- STMicroelectronics S.A.
- Thierry Schwartzmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a MOS transistor with a drain extension and c...
- Publication number 20030008486
- Publication date Jan 9, 2003
- STMicroelectronics S.A.
- Thierry Schwartzmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fast bipolar transistor
- Publication number 20020011649
- Publication date Jan 31, 2002
- Thierry Schwartzmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried layer manufacturing method
- Publication number 20010044195
- Publication date Nov 22, 2001
- Yvon Gris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor manufacturing method
- Publication number 20010034103
- Publication date Oct 25, 2001
- Yvon Gris
- H01 - BASIC ELECTRIC ELEMENTS

Thierry Schwartzmann

Person

Patents Grantslast 30 patents

Integrated circuit comprising a gradually doped bipolar transistor...

Integrated circuit comprising a substrate and a resistor

Integrated circuit comprising a gradually doped bipolar transistor

Bipolar transistor manufacturing method

Contact structure on a deep region formed in a semiconductor substrate

Method of fabricating a MOS transistor with a drain extension and c...

Buried layer manufacturing method

Bipolar transistor manufacturing method

Method of selectively doping the intrinsic collector of a vertical...

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT COMPRISING A GRADUALLY DOPED BIPOLAR TRANSISTOR...

INTEGRATED CIRCUIT COMPRISING A GRADUALLY DOPED BIPOLAR TRANSISTOR...

Integrated circuit comprising a substrate and a resistor

Contact structure on a deep region formed in a semiconductor substrate

Method of fabricating a MOS transistor with a drain extension and c...

Fast bipolar transistor

Buried layer manufacturing method

Bipolar transistor manufacturing method