Thoe MICHAELOS

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ribbon or wire transistor stack with selective dipole threshold vol...
- Patent number 12,183,739
- Issue date Dec 31, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors, memory cells, and arrangements thereof
- Patent number 12,148,734
- Issue date Nov 19, 2024
- Intel Corporation
- Sarah Atanasov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plug and recess process for dual metal gate on stacked nanoribbon d...
- Patent number 12,046,652
- Issue date Jul 23, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PLUG AND RECESS PROCESS FOR DUAL METAL GATE ON STACKED NANORIBBON D...
- Publication number 20240332389
- Publication date Oct 3, 2024
- Intel Corporation
- Nicole THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE SPACER IN STACKED GATE-ALL-AROUND (GAA) DEVICE ARCHITECTURE
- Publication number 20240006499
- Publication date Jan 4, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR STRUCTURES WITH DIVERSE GATE MATERIALS
- Publication number 20230197728
- Publication date Jun 22, 2023
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20230090106
- Publication date Mar 23, 2023
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...
- Publication number 20220199620
- Publication date Jun 23, 2022
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS, MEMORY CELLS, AND ARRANGEMENTS THEREOF
- Publication number 20220189913
- Publication date Jun 16, 2022
- Intel Corporation
- Sarah Atanasov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLUG AND RECESS PROCESS FOR DUAL METAL GATE ON STACKED NANORIBBON D...
- Publication number 20210408257
- Publication date Dec 30, 2021
- Intel Corporation
- Nicole THOMAS
- H01 - BASIC ELECTRIC ELEMENTS

Thoe MICHAELOS

Person

Patents Grantslast 30 patents

Ribbon or wire transistor stack with selective dipole threshold vol...

Transistors, memory cells, and arrangements thereof

Plug and recess process for dual metal gate on stacked nanoribbon d...

Patents Applicationslast 30 patents

PLUG AND RECESS PROCESS FOR DUAL METAL GATE ON STACKED NANORIBBON D...

GATE SPACER IN STACKED GATE-ALL-AROUND (GAA) DEVICE ARCHITECTURE

STACKED TRANSISTOR STRUCTURES WITH DIVERSE GATE MATERIALS

GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY

RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...

TRANSISTORS, MEMORY CELLS, AND ARRANGEMENTS THEREOF

PLUG AND RECESS PROCESS FOR DUAL METAL GATE ON STACKED NANORIBBON D...