Thomas A. Wallner

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for embedded diamond-shaped stress element
- Patent number 9,412,843
- Issue date Aug 9, 2016
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passive devices for FinFET integrated circuit technologies
- Patent number 9,236,398
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET formation with late fin reveal
- Patent number 9,171,935
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES Inc.
- Seong-Dong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with buried silicon germanium for improved proximity con...
- Patent number 8,946,064
- Issue date Feb 3, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passive devices for FinFET integrated circuit technologies
- Patent number 8,916,426
- Issue date Dec 23, 2014
- International Business Machines Corporation
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random access memory test structure
- Patent number 8,787,074
- Issue date Jul 22, 2014
- International Business Machines Corporation
- Oliver D. Patterson
- G11 - INFORMATION STORAGE
Information Patent Grant
Bipolar transistor integrated with metal gate CMOS devices
- Patent number 8,569,840
- Issue date Oct 29, 2013
- International Business Machines Corporation
- Thomas A. Wallner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress enhanced transistor devices and methods of making
- Patent number 8,232,172
- Issue date Jul 31, 2012
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming bipolar transistor integrated with metal gate CMO...
- Patent number 8,129,234
- Issue date Mar 6, 2012
- International Business Machines Corporation
- Thomas A. Wallner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple exposure and single etch integration method
- Patent number 8,124,534
- Issue date Feb 28, 2012
- International Business Machines Corporation
- Jin Wallner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase effective MOSFET width
- Patent number 8,062,951
- Issue date Nov 22, 2011
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for manufacturing trench capacitance
- Patent number 7,858,485
- Issue date Dec 28, 2010
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monocrystalline extrinsic base and emitter heterojunction bipolar t...
- Patent number 7,521,772
- Issue date Apr 21, 2009
- International Business Machines Corporation
- Thomas N Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous silicon for isolation region formation and related structure
- Patent number 7,511,317
- Issue date Mar 31, 2009
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors (BJTS) with second shallow trench isol...
- Patent number 7,342,293
- Issue date Mar 11, 2008
- International Business Machines Corporation
- Thomas A. Wallner
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR EMBEDDED DIAMOND-SHAPED STRESS ELEMENT
- Publication number 20150340465
- Publication date Nov 26, 2015
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET FORMATION WITH LATE FIN REVEAL
- Publication number 20150255569
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Seong-Dong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVE DEVICES FOR FINFET INTEGRATED CIRCUIT TECHNOLOGIES
- Publication number 20150054027
- Publication date Feb 26, 2015
- International Business Machines Corporation
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVE DEVICES FOR FINFET INTEGRATED CIRCUIT TECHNOLOGIES
- Publication number 20130256748
- Publication date Oct 3, 2013
- International Business Machines Corporation
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STATIC RANDOM ACCESS MEMORY TEST STRUCTURE
- Publication number 20130094315
- Publication date Apr 18, 2013
- International Business Machines Corporation
- Oliver D. Patterson
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR WITH BURIED SILICON GERMANIUM FOR IMPROVED PROXIMITY CON...
- Publication number 20120326168
- Publication date Dec 27, 2012
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH BURIED SILICON GERMANIUM FOR IMPROVED PROXIMITY CON...
- Publication number 20120319166
- Publication date Dec 20, 2012
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR INTEGRATED WITH METAL GATE CMOS DEVICES
- Publication number 20120139056
- Publication date Jun 7, 2012
- International Business Machines Corporation
- Thomas A. Wallner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ENHANCED TRANSISTOR DEVICES AND METHODS OF MAKING
- Publication number 20110159655
- Publication date Jun 30, 2011
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR INTEGRATED WITH METAL GATE CMOS DEVICES
- Publication number 20110057266
- Publication date Mar 10, 2011
- International Business Machines Corporation
- Thomas A. Wallner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED STRESS ELEMENTS ON SURFACE THIN DIRECT SILICON BOND SUBSTR...
- Publication number 20100200896
- Publication date Aug 12, 2010
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MANUFACTURING TRENCH CAPACITANCE
- Publication number 20100038751
- Publication date Feb 18, 2010
- International Business Machines Corporation
- HUILONG ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE EXPOSURE AND SINGLE ETCH INTEGRATION METHOD
- Publication number 20100022088
- Publication date Jan 28, 2010
- International Business Machines Corporation
- Jin Wallner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ENHANCED TRANSISTOR DEVICES AND METHODS OF MAKING
- Publication number 20090302348
- Publication date Dec 10, 2009
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ge/Xe IMPLANTS TO REDUCE JUNCTION CAPACITANCE AND LEAKAGE
- Publication number 20090294872
- Publication date Dec 3, 2009
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE WITH EMBEDDED STRESSOR
- Publication number 20090242989
- Publication date Oct 1, 2009
- KEVIN K. CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO INCREASE EFFECTIVE MOSFET WIDTH
- Publication number 20090146263
- Publication date Jun 11, 2009
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOCRYSTALLINE EXTRINSIC BASE AND EMITTER HETEROJUNCTION BIPOLAR T...
- Publication number 20080121930
- Publication date May 29, 2008
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH MONOCRYSTALLINE BASE AND REL...
- Publication number 20080121937
- Publication date May 29, 2008
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POROUS SILICON FOR ISOLATION REGION FORMATION AND RELATED STRUCTURE
- Publication number 20070284674
- Publication date Dec 13, 2007
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS (BJTS) WITH SECOND SHALLOW TRENCH ISOL...
- Publication number 20070126080
- Publication date Jun 7, 2007
- International Business Machines Corporation
- Thomas A. Wallner
- H01 - BASIC ELECTRIC ELEMENTS

Thomas A. Wallner

Person

Patents Grantslast 30 patents

Method for embedded diamond-shaped stress element

Passive devices for FinFET integrated circuit technologies

FinFET formation with late fin reveal

Transistor with buried silicon germanium for improved proximity con...

Passive devices for FinFET integrated circuit technologies

Static random access memory test structure

Bipolar transistor integrated with metal gate CMOS devices

Stress enhanced transistor devices and methods of making

Method of forming bipolar transistor integrated with metal gate CMO...

Multiple exposure and single etch integration method

Method to increase effective MOSFET width

Structure and method for manufacturing trench capacitance

Monocrystalline extrinsic base and emitter heterojunction bipolar t...

Porous silicon for isolation region formation and related structure

Bipolar junction transistors (BJTS) with second shallow trench isol...

Patents Applicationslast 30 patents

METHOD FOR EMBEDDED DIAMOND-SHAPED STRESS ELEMENT

FinFET FORMATION WITH LATE FIN REVEAL

PASSIVE DEVICES FOR FINFET INTEGRATED CIRCUIT TECHNOLOGIES

PASSIVE DEVICES FOR FINFET INTEGRATED CIRCUIT TECHNOLOGIES

STATIC RANDOM ACCESS MEMORY TEST STRUCTURE

TRANSISTOR WITH BURIED SILICON GERMANIUM FOR IMPROVED PROXIMITY CON...

TRANSISTOR WITH BURIED SILICON GERMANIUM FOR IMPROVED PROXIMITY CON...

BIPOLAR TRANSISTOR INTEGRATED WITH METAL GATE CMOS DEVICES

STRESS ENHANCED TRANSISTOR DEVICES AND METHODS OF MAKING

BIPOLAR TRANSISTOR INTEGRATED WITH METAL GATE CMOS DEVICES

EMBEDDED STRESS ELEMENTS ON SURFACE THIN DIRECT SILICON BOND SUBSTR...

STRUCTURE AND METHOD FOR MANUFACTURING TRENCH CAPACITANCE

MULTIPLE EXPOSURE AND SINGLE ETCH INTEGRATION METHOD

STRESS ENHANCED TRANSISTOR DEVICES AND METHODS OF MAKING

Ge/Xe IMPLANTS TO REDUCE JUNCTION CAPACITANCE AND LEAKAGE

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE WITH EMBEDDED STRESSOR

STRUCTURE AND METHOD TO INCREASE EFFECTIVE MOSFET WIDTH

MONOCRYSTALLINE EXTRINSIC BASE AND EMITTER HETEROJUNCTION BIPOLAR T...

HETEROJUNCTION BIPOLAR TRANSISTOR WITH MONOCRYSTALLINE BASE AND REL...

POROUS SILICON FOR ISOLATION REGION FORMATION AND RELATED STRUCTURE

BIPOLAR JUNCTION TRANSISTORS (BJTS) WITH SECOND SHALLOW TRENCH ISOL...