Thomas Aichinger

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Method of producing a semiconductor device having a ferroelectric g...
- Patent number 12,107,128
- Issue date Oct 1, 2024
- Infineon Technologies AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an optical device degradation sensor
- Patent number 11,940,489
- Issue date Mar 26, 2024
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with silicon carbide body
- Patent number 11,881,512
- Issue date Jan 23, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a ferroelectric gate stack
- Patent number 11,791,383
- Issue date Oct 17, 2023
- Infineon Technologies AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,626,477
- Issue date Apr 11, 2023
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device with channel regions extending along at least one of the...
- Patent number 11,462,611
- Issue date Oct 4, 2022
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a varying gate runner resistivity per area
- Patent number 11,417,747
- Issue date Aug 16, 2022
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide devices, semiconductor devices and methods for form...
- Patent number 11,342,433
- Issue date May 24, 2022
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide band gap semiconductor device and method for forming a wide ba...
- Patent number 11,295,951
- Issue date Apr 5, 2022
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench gate structure and manufactur...
- Patent number 11,251,269
- Issue date Feb 15, 2022
- Infineon Technologies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicon carbide body
- Patent number 11,195,921
- Issue date Dec 7, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,101,343
- Issue date Aug 24, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device and methods of manufacturing thereof
- Patent number 10,896,952
- Issue date Jan 19, 2021
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench gate structure including a gate el...
- Patent number 10,734,514
- Issue date Aug 4, 2020
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with stripe-shaped trench gate structures, tra...
- Patent number 10,714,609
- Issue date Jul 14, 2020
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with transistor cells and a drift structure an...
- Patent number 10,700,182
- Issue date Jun 30, 2020
- Infineon Technologies AG
- Thomas Aichinger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
SiC trench transistor device and methods of manufacturing thereof
- Patent number 10,586,845
- Issue date Mar 10, 2020
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device with offset in trench bottom
- Patent number 10,553,685
- Issue date Feb 4, 2020
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for analyzing ion kinetics in dielectrics
- Patent number 10,393,697
- Issue date Aug 27, 2019
- Infineon Technologies AG
- Sabine Gruber
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device with stripe-shaped trench gate structures, tra...
- Patent number 10,304,953
- Issue date May 28, 2019
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide semiconductor device by r...
- Patent number 10,217,636
- Issue date Feb 26, 2019
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diode region and trench gate structure
- Patent number 10,211,306
- Issue date Feb 19, 2019
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench gate structure including a gate el...
- Patent number 10,074,741
- Issue date Sep 11, 2018
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with stripe-shaped trench gate structures and...
- Patent number 9,960,243
- Issue date May 1, 2018
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide transistor device with a shielded gate
- Patent number 9,960,230
- Issue date May 1, 2018
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide semiconductor device by r...
- Patent number 9,934,972
- Issue date Apr 3, 2018
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide transistor device with a shielded gate
- Patent number 9,923,053
- Issue date Mar 20, 2018
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap semiconductor device
- Patent number 9,923,066
- Issue date Mar 20, 2018
- Infineon Technologies AG
- Daniel Kueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a silicon-carbide device with a shielded gate
- Patent number 9,577,073
- Issue date Feb 21, 2017
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a silicon-carbide device with a shielded gate
- Patent number 9,543,414
- Issue date Jan 10, 2017
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE
- Publication number 20250056869
- Publication date Feb 13, 2025
- INFINEON TECHNOLOGIES AG
- Fabian RASINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE
- Publication number 20250015148
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Thomas AICHINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE
- Publication number 20250006814
- Publication date Jan 2, 2025
- INFINEON TECHNOLOGIES AG
- Wolfgang LEHNERT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A HIGH-K GATE DIELECTRIC MULTILAYER...
- Publication number 20240405092
- Publication date Dec 5, 2024
- INFINEON TECHNOLOGIES AG
- Armin TILKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A SEMICONDUCTOR DEVICE HAVING A FERROELECTRIC G...
- Publication number 20230411460
- Publication date Dec 21, 2023
- INFINEON TECNOLOGIES AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE
- Publication number 20230352520
- Publication date Nov 2, 2023
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH POWER DEVICE WITH ENHANCED CHARGE CARRIER MOBILITY
- Publication number 20230178615
- Publication date Jun 8, 2023
- INFINEON TECHNOLOGIES AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A TRENCH GATE STRUCTURE
- Publication number 20230163167
- Publication date May 25, 2023
- INFINEON TECHNOLOGIES AG
- Michael HELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having an Optical Device Degradation Sensor
- Publication number 20230121426
- Publication date Apr 20, 2023
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A FERROELECTRIC GATE STACK
- Publication number 20230035144
- Publication date Feb 2, 2023
- INFINEON TECHNOLOGIES AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC MOSFET WITH REDUCED ON-RESISTANCE
- Publication number 20220262906
- Publication date Aug 18, 2022
- INFINEON TECHNOLOGIES AG
- Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Devices, Semiconductor Devices and Methods for Form...
- Publication number 20220246745
- Publication date Aug 4, 2022
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Annealing a Gate Insulation Layer on a Wide Band Gap Sem...
- Publication number 20220157607
- Publication date May 19, 2022
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Silicon Carbide Body and Method of Manufa...
- Publication number 20220059659
- Publication date Feb 24, 2022
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20210343835
- Publication date Nov 4, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device with Channel Regions Extending Along at least one of the...
- Publication number 20210118986
- Publication date Apr 22, 2021
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH A VARYING GATE RUNNER RESISTIVITY PER AREA
- Publication number 20210119006
- Publication date Apr 22, 2021
- INFINEON TECHNOLOGIES AG
- Thomas AICHINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device and Methods of Manufacturing Thereof
- Publication number 20200194544
- Publication date Jun 18, 2020
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Devices, Semiconductor Devices and Methods for Form...
- Publication number 20200176580
- Publication date Jun 4, 2020
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Trench Gate Structure and Manufactur...
- Publication number 20200098868
- Publication date Mar 26, 2020
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND TRANSISTOR...
- Publication number 20200006544
- Publication date Jan 2, 2020
- INFINEON TECHNOLOGIES AG
- Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Silicon Carbide Body and Method of Manufa...
- Publication number 20190355819
- Publication date Nov 21, 2019
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20190341447
- Publication date Nov 7, 2019
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide Band Gap Semiconductor Device and Method for Forming a Wide Ba...
- Publication number 20190311903
- Publication date Oct 10, 2019
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Stripe-Shaped Trench Gate Structures, Tra...
- Publication number 20190245075
- Publication date Aug 8, 2019
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Trench Gate Structure Including a Gate El...
- Publication number 20180350968
- Publication date Dec 6, 2018
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Transistor Cells and a Drift Structure an...
- Publication number 20180331204
- Publication date Nov 15, 2018
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SiC Semiconductor Device with Offset in Trench Bottom
- Publication number 20180308938
- Publication date Oct 25, 2018
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Transistor Device with a Variable Gate Dielectric Thickness
- Publication number 20180248000
- Publication date Aug 30, 2018
- INFINEON TECHNOLOGIES AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Silicon Carbide Semiconductor Device by R...
- Publication number 20180204725
- Publication date Jul 19, 2018
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS

Thomas Aichinger

Person

Patents Grantslast 30 patents

Method of producing a semiconductor device having a ferroelectric g...

Semiconductor device having an optical device degradation sensor

Method of manufacturing semiconductor device with silicon carbide body

Semiconductor device having a ferroelectric gate stack

Silicon carbide field-effect transistor including shielding areas

SiC device with channel regions extending along at least one of the...

Transistor device with a varying gate runner resistivity per area

Silicon carbide devices, semiconductor devices and methods for form...

Wide band gap semiconductor device and method for forming a wide ba...

Semiconductor device including trench gate structure and manufactur...

Semiconductor device with silicon carbide body

Silicon carbide field-effect transistor including shielding areas

SiC device and methods of manufacturing thereof

Semiconductor device with trench gate structure including a gate el...

Semiconductor device with stripe-shaped trench gate structures, tra...

Semiconductor device with transistor cells and a drift structure an...

SiC trench transistor device and methods of manufacturing thereof

SiC semiconductor device with offset in trench bottom

Apparatus for analyzing ion kinetics in dielectrics

Semiconductor device with stripe-shaped trench gate structures, tra...

Method of manufacturing a silicon carbide semiconductor device by r...

Semiconductor device with diode region and trench gate structure

Semiconductor device with trench gate structure including a gate el...

Semiconductor device with stripe-shaped trench gate structures and...

Silicon-carbide transistor device with a shielded gate

Method of manufacturing a silicon carbide semiconductor device by r...

Silicon-carbide transistor device with a shielded gate

Wide bandgap semiconductor device

Method of forming a silicon-carbide device with a shielded gate

Method of forming a silicon-carbide device with a shielded gate

Patents Applicationslast 30 patents

WIDE BAND GAP SEMICONDUCTOR DEVICE

TRANSISTOR DEVICE

SILICON CARBIDE DEVICE

SEMICONDUCTOR DEVICE COMPRISING A HIGH-K GATE DIELECTRIC MULTILAYER...

METHOD OF PRODUCING A SEMICONDUCTOR DEVICE HAVING A FERROELECTRIC G...

WIDE BAND GAP SEMICONDUCTOR DEVICE

TRENCH POWER DEVICE WITH ENHANCED CHARGE CARRIER MOBILITY

SEMICONDUCTOR DEVICE INCLUDING A TRENCH GATE STRUCTURE

Semiconductor Device Having an Optical Device Degradation Sensor

SEMICONDUCTOR DEVICE HAVING A FERROELECTRIC GATE STACK

SIC MOSFET WITH REDUCED ON-RESISTANCE

Silicon Carbide Devices, Semiconductor Devices and Methods for Form...

Method for Annealing a Gate Insulation Layer on a Wide Band Gap Sem...

Semiconductor Device with Silicon Carbide Body and Method of Manufa...

Silicon Carbide Semiconductor Component

SiC Device with Channel Regions Extending Along at least one of the...

TRANSISTOR DEVICE WITH A VARYING GATE RUNNER RESISTIVITY PER AREA

SiC Device and Methods of Manufacturing Thereof

Silicon Carbide Devices, Semiconductor Devices and Methods for Form...

Semiconductor Device Including Trench Gate Structure and Manufactur...

SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND TRANSISTOR...

Semiconductor Device with Silicon Carbide Body and Method of Manufa...

Silicon Carbide Semiconductor Component

Wide Band Gap Semiconductor Device and Method for Forming a Wide Ba...

Semiconductor Device with Stripe-Shaped Trench Gate Structures, Tra...

Semiconductor Device with Trench Gate Structure Including a Gate El...

Semiconductor Device with Transistor Cells and a Drift Structure an...

SiC Semiconductor Device with Offset in Trench Bottom

Vertical Transistor Device with a Variable Gate Dielectric Thickness

Method of Manufacturing a Silicon Carbide Semiconductor Device by R...