Thomas Christian Roedle

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Nijmegen, NL

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Patents Grantslast 30 patents

Information Patent Grant
Electronic device comprising a field effect transistor for high-fre...
- Patent number 8,357,979
- Issue date Jan 22, 2013
- NXP B.V.
- Thomas Christian Roedle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving inversion layer mobility in a silicon carbide...
- Patent number 8,012,818
- Issue date Sep 6, 2011
- NXP B.V.
- Thomas C. Roedle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor (DMOS) device for use as a power amplifier
- Patent number 7,652,316
- Issue date Jan 26, 2010
- DSP Group Switzerland AG
- Radjindrepersad Gajadharsing
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR IMPROVING INVERSION LAYER MOBILITY IN A SILICON CARBIDE...
- Publication number 20100006860
- Publication date Jan 14, 2010
- NXP, B.V.
- Thomas C. Roedle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device comprising a field effect transistor for high-fre...
- Publication number 20060231905
- Publication date Oct 19, 2006
- Thomas Christian Roedle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device comprising a field-effect transitor and method...
- Publication number 20060220154
- Publication date Oct 5, 2006
- Koninklijke Philips Electronics N.V.
- Radjindrepersad Gajadharsing
- H01 - BASIC ELECTRIC ELEMENTS