Thomas E. Anderson

Person

Convent Station, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a multilayer substrate comprising a layer of sili...
- Patent number 11,891,691
- Issue date Feb 6, 2024
- II-VI DELAWARE, INC.
- Wen-Qing Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of producing optically-finished thin diamond substrates or...
- Patent number 11,618,945
- Issue date Apr 4, 2023
- II-VI DELAWARE, INC.
- Wen-Qing Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a multilayer substrate comprising a layer of sili...
- Patent number 11,313,037
- Issue date Apr 26, 2022
- II-VI DELAWARE, INC.
- Wen-Qing Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Highly twinned, oriented polycrystalline diamond film and method of...
- Patent number 10,910,127
- Issue date Feb 2, 2021
- II-VI DELAWARE, INC.
- Wen-Qing Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vanadium compensated, SI SiC single crystals of NU and PI type and...
- Patent number RE48378
- Issue date Jan 5, 2021
- II-VI DELAWARE, INC.
- Ilya Zwieback
Information Patent Grant
Substrate comprising a layer of silicon and a layer of diamond havi...
- Patent number 10,584,412
- Issue date Mar 10, 2020
- II-VI DELAWARE, INC.
- Wen-Qing Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming an optically-finished thin diamond film, diamond...
- Patent number 10,494,713
- Issue date Dec 3, 2019
- II-VI Incorporated
- Wen-Qing Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Highly twinned, oriented polycrystalline diamond film and method of...
- Patent number 10,373,725
- Issue date Aug 6, 2019
- II-VI Incorporated
- Wen-Qing Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Composite substrate with alternating pattern of diamond and metal o...
- Patent number 9,812,375
- Issue date Nov 7, 2017
- II-VI Incorporated
- Wen-Qing Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for silicon carbide crystal growth by reacting elemental sil...
- Patent number 9,580,837
- Issue date Feb 28, 2017
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large diameter, high quality SiC single crystals, method and apparatus
- Patent number RE46315
- Issue date Feb 21, 2017
- II-VI Incorporated
- Ilya Zwieback
Information Patent Grant
Method for synthesizing ultrahigh-purity silicon carbide
- Patent number 9,388,509
- Issue date Jul 12, 2016
- II-VI Incorporated
- Ilya Zwieback
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Vanadium doped SiC single crystals and method thereof
- Patent number 9,322,110
- Issue date Apr 26, 2016
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vanadium compensated, SI SiC single crystals of NU and PI type and...
- Patent number 9,090,989
- Issue date Jul 28, 2015
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large diameter, high quality SiC single crystals, method and apparatus
- Patent number 8,741,413
- Issue date Jun 3, 2014
- II-VI Incorporated
- Ilya Zwieback
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Halosilane assisted PVT growth of SiC
- Patent number 8,512,471
- Issue date Aug 20, 2013
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystals with low boron content
- Patent number 8,361,227
- Issue date Jan 29, 2013
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Grant
Guided diameter SiC sublimation growth with multi-layer growth guide
- Patent number 8,313,720
- Issue date Nov 20, 2012
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
OPTICALLY-FINISHED THIN DIAMOND SUBSTRATE OR WINDOW OF HIGH ASPECT...
- Publication number 20230193457
- Publication date Jun 22, 2023
- Wen-Qing XU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING A MULTILAYER SUBSTRATE COMPRISING A LAYER OF SILI...
- Publication number 20220205084
- Publication date Jun 30, 2022
- II-VI Delaware, Inc.
- Wen-Qing Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of Forming a Multilayer Substrate Comprising a Layer of Sili...
- Publication number 20200157676
- Publication date May 21, 2020
- II-VI Delaware, Inc.
- Wen-Qing Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Optically-Finished Thin Diamond Substrate or Window of High Aspect...
- Publication number 20200071818
- Publication date Mar 5, 2020
- II-VI Incorporated
- Wen-Qing Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Highly Twinned, Oriented Polycrystalline Diamond Film and Method of...
- Publication number 20190326030
- Publication date Oct 24, 2019
- II-VI Incorporated
- Wen-Qing Xu
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Substrate Comprising a Layer of Silicon and a Layer of Diamond havi...
- Publication number 20170260625
- Publication date Sep 14, 2017
- II-VI Incorporated
- Wen-Qing Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Optically-Finished Thin Diamond Substrate or Window of High Aspect...
- Publication number 20160333472
- Publication date Nov 17, 2016
- II-VI Incorporated
- Wen-Qing Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Composite Substrate with Alternating Pattern of Diamond and Metal o...
- Publication number 20160233142
- Publication date Aug 11, 2016
- II-VI Incorporated
- Wen-Qing Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Highly Twinned, Oriented Polycrystalline Diamond Film and Method of...
- Publication number 20160130725
- Publication date May 12, 2016
- II-VI Incorporated
- Wen-Qing Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Carbide Crystal Growth by Silicon Chemical Vapor Transport
- Publication number 20160060789
- Publication date Mar 3, 2016
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
Vanadium Doped SiC Single Crystals and Method Thereof
- Publication number 20140234194
- Publication date Aug 21, 2014
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and...
- Publication number 20130320275
- Publication date Dec 5, 2013
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
"Method for Synthesizing Ultrahigh-Purity Silicon Carbide"
- Publication number 20130309496
- Publication date Nov 21, 2013
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
Large Diameter, High Quality SiC Single Crystals, Method and Apparatus
- Publication number 20130280466
- Publication date Oct 24, 2013
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
Halosilane Assisted PVT Growth of SiC
- Publication number 20120225004
- Publication date Sep 6, 2012
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
GUIDED DIAMETER SiC SUBLIMATION GROWTH WITH MULTI-LAYER GROWTH GUIDE
- Publication number 20100061914
- Publication date Mar 11, 2010
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Cry...
- Publication number 20090053125
- Publication date Feb 26, 2009
- Il-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH
Information Patent Application
Chemical-Mechanical Polishing of Sic Surfaces Using Hydrogen Peroxi...
- Publication number 20080261401
- Publication date Oct 23, 2008
- II-VI Incorporated
- Thomas M. Kerr
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
Low-Doped Semi-Insulating Sic Crystals and Method
- Publication number 20080190355
- Publication date Aug 14, 2008
- II-VI Incorporated
- Jihong Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide single crystals with low boron content
- Publication number 20080072817
- Publication date Mar 27, 2008
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH

Thomas E. Anderson

Person

Patents Grantslast 30 patents

Method of forming a multilayer substrate comprising a layer of sili...

Methods of producing optically-finished thin diamond substrates or...

Method of forming a multilayer substrate comprising a layer of sili...

Highly twinned, oriented polycrystalline diamond film and method of...

Vanadium compensated, SI SiC single crystals of NU and PI type and...

Substrate comprising a layer of silicon and a layer of diamond havi...

Method of forming an optically-finished thin diamond film, diamond...

Highly twinned, oriented polycrystalline diamond film and method of...

Composite substrate with alternating pattern of diamond and metal o...

Method for silicon carbide crystal growth by reacting elemental sil...

Large diameter, high quality SiC single crystals, method and apparatus

Method for synthesizing ultrahigh-purity silicon carbide

Vanadium doped SiC single crystals and method thereof

Vanadium compensated, SI SiC single crystals of NU and PI type and...

Large diameter, high quality SiC single crystals, method and apparatus

Halosilane assisted PVT growth of SiC

Silicon carbide single crystals with low boron content

Guided diameter SiC sublimation growth with multi-layer growth guide

Patents Applicationslast 30 patents

OPTICALLY-FINISHED THIN DIAMOND SUBSTRATE OR WINDOW OF HIGH ASPECT...

METHOD OF FORMING A MULTILAYER SUBSTRATE COMPRISING A LAYER OF SILI...

Method of Forming a Multilayer Substrate Comprising a Layer of Sili...

Optically-Finished Thin Diamond Substrate or Window of High Aspect...

Highly Twinned, Oriented Polycrystalline Diamond Film and Method of...

Substrate Comprising a Layer of Silicon and a Layer of Diamond havi...

Optically-Finished Thin Diamond Substrate or Window of High Aspect...

Composite Substrate with Alternating Pattern of Diamond and Metal o...

Highly Twinned, Oriented Polycrystalline Diamond Film and Method of...

Silicon Carbide Crystal Growth by Silicon Chemical Vapor Transport

Vanadium Doped SiC Single Crystals and Method Thereof

Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and...

"Method for Synthesizing Ultrahigh-Purity Silicon Carbide"

Large Diameter, High Quality SiC Single Crystals, Method and Apparatus

Halosilane Assisted PVT Growth of SiC

GUIDED DIAMETER SiC SUBLIMATION GROWTH WITH MULTI-LAYER GROWTH GUIDE

Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Cry...

Chemical-Mechanical Polishing of Sic Surfaces Using Hydrogen Peroxi...

Low-Doped Semi-Insulating Sic Crystals and Method

Silicon carbide single crystals with low boron content