Thomas Feil

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor package and methods of manufacturing a semiconductor...
- Patent number 12,087,717
- Issue date Sep 10, 2024
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar gate semiconductor device with oxygen-doped Si-layers
- Patent number 11,908,904
- Issue date Feb 20, 2024
- Infineon Technologies Austria AG
- Sylvain Leomant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite wafer, semiconductor device and electronic component
- Patent number 11,848,237
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a field electrode that includes two layers
- Patent number 11,581,409
- Issue date Feb 14, 2023
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device and method of manufacturing the same
- Patent number 11,417,732
- Issue date Aug 16, 2022
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite wafer, semiconductor device and electronic component
- Patent number 11,302,579
- Issue date Apr 12, 2022
- Infineon Technologies AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic circuit with a transistor device and a clamping circuit
- Patent number 11,158,627
- Issue date Oct 26, 2021
- Infineon Technologies Austria AG
- Thomas Feil
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor package and methods of manufacturing a semiconductor...
- Patent number 11,081,457
- Issue date Aug 3, 2021
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor module, electronic component and method of manufactur...
- Patent number 11,069,639
- Issue date Jul 20, 2021
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having body contacts with dielectric spacers a...
- Patent number 11,031,478
- Issue date Jun 8, 2021
- Infineon Technologies Austria AG
- Wei-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a field electrode that includes two layers
- Patent number 10,957,771
- Issue date Mar 23, 2021
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power devices with oxygen inserted Si-layers
- Patent number 10,868,172
- Issue date Dec 15, 2020
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical trench power devices with oxygen inserted Si-layers
- Patent number 10,861,966
- Issue date Dec 8, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a field electrode that includes two layers
- Patent number 10,720,500
- Issue date Jul 21, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite wafer, semiconductor device, electronic component and met...
- Patent number 10,672,664
- Issue date Jun 2, 2020
- Infineon Technologies AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers for reduced contact implant outdiffusion...
- Patent number 10,580,888
- Issue date Mar 3, 2020
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers in vertical trench power devices
- Patent number 10,573,742
- Issue date Feb 25, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,529,845
- Issue date Jan 7, 2020
- Infineon Technologies Austria AG
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a trench with control and field e...
- Patent number 10,529,811
- Issue date Jan 7, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a field electrode that includes two layers
- Patent number 10,243,051
- Issue date Mar 26, 2019
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device trench having field plate and gate elect...
- Patent number 10,236,351
- Issue date Mar 19, 2019
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING A VERTICAL POWER TRANSISTOR WITH A META...
- Publication number 20250107143
- Publication date Mar 27, 2025
- Infineon Technologies Austria AG
- Robert Haase
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250107144
- Publication date Mar 27, 2025
- Infineon Technologies Austria AG
- Thomas Martin Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH REDUCED ON-RESISTANCE
- Publication number 20250096121
- Publication date Mar 20, 2025
- Infineon Technologies Austria AG
- Thomas Martin Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240290877
- Publication date Aug 29, 2024
- Infineon Technologies Austria AG
- Britta Wutte
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Die with a Vertical Power Transistor Device
- Publication number 20240243130
- Publication date Jul 18, 2024
- Infineon Technologies Austria AG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND CORRESPONDING METHODS OF MANUFACTURE
- Publication number 20240194754
- Publication date Jun 13, 2024
- Infineon Technologies Austria AG
- Weichun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR GATE SEMICONDUCTOR DEVICE WITH OXYGEN-DOPED SI-LAYERS
- Publication number 20230047420
- Publication date Feb 16, 2023
- Sylvain Leomant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE WITH A VERTICAL TRANSISTOR DEVICE
- Publication number 20220375929
- Publication date Nov 24, 2022
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE WITH A TRANSISTOR DEVICE AND METHOD OF MANUFACTUR...
- Publication number 20220376063
- Publication date Nov 24, 2022
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Wafer, Semiconductor Device and Electronic Component
- Publication number 20220181211
- Publication date Jun 9, 2022
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PACKAGE AND METHODS OF MANUFACTURING A SEMICONDUCTOR...
- Publication number 20210335739
- Publication date Oct 28, 2021
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BODY CONTACT REGIONS AND CORRESPONDING...
- Publication number 20210273067
- Publication date Sep 2, 2021
- Wei-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device with a Field Electrode that Includes Two Layers
- Publication number 20210167175
- Publication date Jun 3, 2021
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Transistor Device and Method of Manufacturing the Same
- Publication number 20210005715
- Publication date Jan 7, 2021
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Wafer, Semiconductor Device and Electronic Component
- Publication number 20200273750
- Publication date Aug 27, 2020
- INFINEON TECHNOLOGIES AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device with a Field Electrode that Includes Two Layers
- Publication number 20200273956
- Publication date Aug 27, 2020
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Power Devices with Oxygen Inserted Si-Layers
- Publication number 20200127134
- Publication date Apr 23, 2020
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Trench Power Devices with Oxygen Inserted Si-Layers
- Publication number 20200127135
- Publication date Apr 23, 2020
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device and Method for Forming a Recess for a Trench Gate...
- Publication number 20200111896
- Publication date Apr 9, 2020
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN INSERTED SI-LAYERS FOR REDUCED CONTACT IMPLANT OUTDIFFUSION...
- Publication number 20200052109
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen Inserted Si-Layers in Vertical Trench Power Devices
- Publication number 20200052110
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Circuit with a Transistor Device and a Clamping Circuit
- Publication number 20190326277
- Publication date Oct 24, 2019
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20190280117
- Publication date Sep 12, 2019
- Infineon Technologies Austria AG
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Package and Methods of Manufacturing a Semiconductor...
- Publication number 20190267362
- Publication date Aug 29, 2019
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Module, Electronic Component and Method of Manufactur...
- Publication number 20190267343
- Publication date Aug 29, 2019
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Body Contacts with Dielectric Spacers a...
- Publication number 20190229198
- Publication date Jul 25, 2019
- Infineon Technologies Austria AG
- Wei-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device with a Field Electrode that Includes Two Layers
- Publication number 20190172917
- Publication date Jun 6, 2019
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Trench with Control and Field E...
- Publication number 20190172916
- Publication date Jun 6, 2019
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Wafer, Semiconductor Device, Electronic Component and Met...
- Publication number 20190088550
- Publication date Mar 21, 2019
- INFINEON TECHNOLOGIES AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device with a Field Electrode that Includes Two Layers
- Publication number 20180033859
- Publication date Feb 1, 2018
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS

Thomas Feil

Person

Patents Grantslast 30 patents

Semiconductor package and methods of manufacturing a semiconductor...

Planar gate semiconductor device with oxygen-doped Si-layers

Composite wafer, semiconductor device and electronic component

Transistor device with a field electrode that includes two layers

Semiconductor transistor device and method of manufacturing the same

Composite wafer, semiconductor device and electronic component

Electronic circuit with a transistor device and a clamping circuit

Semiconductor package and methods of manufacturing a semiconductor...

Semiconductor module, electronic component and method of manufactur...

Semiconductor device having body contacts with dielectric spacers a...

Transistor device with a field electrode that includes two layers

Vertical power devices with oxygen inserted Si-layers

Vertical trench power devices with oxygen inserted Si-layers

Transistor device with a field electrode that includes two layers

Composite wafer, semiconductor device, electronic component and met...

Oxygen inserted Si-layers for reduced contact implant outdiffusion...

Oxygen inserted Si-layers in vertical trench power devices

Semiconductor device

Power semiconductor device having a trench with control and field e...

Transistor device with a field electrode that includes two layers

Power semiconductor device trench having field plate and gate elect...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING A VERTICAL POWER TRANSISTOR WITH A META...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

TRANSISTOR DEVICE WITH REDUCED ON-RESISTANCE

SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME

Semiconductor Die with a Vertical Power Transistor Device

SEMICONDUCTOR DEVICE AND CORRESPONDING METHODS OF MANUFACTURE

PLANAR GATE SEMICONDUCTOR DEVICE WITH OXYGEN-DOPED SI-LAYERS

SEMICONDUCTOR DIE WITH A VERTICAL TRANSISTOR DEVICE

SEMICONDUCTOR DIE WITH A TRANSISTOR DEVICE AND METHOD OF MANUFACTUR...

Composite Wafer, Semiconductor Device and Electronic Component

SEMICONDUCTOR PACKAGE AND METHODS OF MANUFACTURING A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE HAVING BODY CONTACT REGIONS AND CORRESPONDING...

Transistor Device with a Field Electrode that Includes Two Layers

Semiconductor Transistor Device and Method of Manufacturing the Same

Composite Wafer, Semiconductor Device and Electronic Component

Transistor Device with a Field Electrode that Includes Two Layers

Vertical Power Devices with Oxygen Inserted Si-Layers

Vertical Trench Power Devices with Oxygen Inserted Si-Layers

Transistor Device and Method for Forming a Recess for a Trench Gate...

OXYGEN INSERTED SI-LAYERS FOR REDUCED CONTACT IMPLANT OUTDIFFUSION...

Oxygen Inserted Si-Layers in Vertical Trench Power Devices

Electronic Circuit with a Transistor Device and a Clamping Circuit

Semiconductor Device

Semiconductor Package and Methods of Manufacturing a Semiconductor...

Semiconductor Module, Electronic Component and Method of Manufactur...

Semiconductor Device Having Body Contacts with Dielectric Spacers a...

Transistor Device with a Field Electrode that Includes Two Layers

Power Semiconductor Device Having a Trench with Control and Field E...

Composite Wafer, Semiconductor Device, Electronic Component and Met...

Transistor Device with a Field Electrode that Includes Two Layers