Thomas Hoffmann

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for improving transistor performance through reducing the sa...
- Patent number 9,876,113
- Issue date Jan 23, 2018
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving transistor performance through reducing the sa...
- Patent number 9,680,016
- Issue date Jun 13, 2017
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing strained device performance by use of multi narrow sectio...
- Patent number 7,482,670
- Issue date Jan 27, 2009
- Intel Corporation
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-induced strain for MOS performance improvement
- Patent number 7,452,764
- Issue date Nov 18, 2008
- Intel Corporation
- Thomas Hoffmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing a stressed MOS transistor structure
- Patent number 7,338,847
- Issue date Mar 4, 2008
- Intel Corporation
- M. Reaz Shaheed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving transistor performance through reducing the sa...
- Patent number 7,274,055
- Issue date Sep 25, 2007
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing strained device performance by use of multi narrow sectio...
- Patent number 7,101,765
- Issue date Sep 5, 2006
- Intel Corporation
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with improved channel stress properties and a me...
- Patent number 7,045,408
- Issue date May 16, 2006
- Intel Corporation
- Thomas Hoffmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving transistor performance through reducing the sa...
- Patent number 6,949,482
- Issue date Sep 27, 2005
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increasing stress-enhanced drive current in a MOS transistor
- Patent number 6,870,179
- Issue date Mar 22, 2005
- Intel Corporation
- M. Reaz Shaheed
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for improving transistor performance through reducing the sa...
- Publication number 20110101418
- Publication date May 5, 2011
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for improving transistor performance through reducing the sa...
- Publication number 20110006344
- Publication date Jan 13, 2011
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for improving transistor performance through reducing the sa...
- Publication number 20080044968
- Publication date Feb 21, 2008
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancing strained device performance by use of multi narrow sectio...
- Publication number 20060208337
- Publication date Sep 21, 2006
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Short channel effect of MOS devices by retrograde well engineering...
- Publication number 20060065937
- Publication date Mar 30, 2006
- Thomas Hoffmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for improving transistor performance through reducing the sa...
- Publication number 20050253200
- Publication date Nov 17, 2005
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancing strained device performance by use of multi narrow sectio...
- Publication number 20050221566
- Publication date Oct 6, 2005
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate-induced strain for MOS performance improvement
- Publication number 20050167652
- Publication date Aug 4, 2005
- Thomas Hoffmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVING TRANSISTOR PERFORMANCE THROUGH REDUCING THE SA...
- Publication number 20050130454
- Publication date Jun 16, 2005
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of manufacturing a stressed MOS transistor structure
- Publication number 20050104057
- Publication date May 19, 2005
- M. Reaz Shaheed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate-induced strain for MOS performance improvement
- Publication number 20040253776
- Publication date Dec 16, 2004
- Thomas Hoffmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit with improved channel stress properties and a me...
- Publication number 20040235236
- Publication date Nov 25, 2004
- Thomas Hoffmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Increasing stress-enhanced drive current in a MOS transistor
- Publication number 20040188670
- Publication date Sep 30, 2004
- M. Reaz Shaheed
- H01 - BASIC ELECTRIC ELEMENTS

Thomas Hoffmann

Person

Patents Grantslast 30 patents

Method for improving transistor performance through reducing the sa...

Method for improving transistor performance through reducing the sa...

Enhancing strained device performance by use of multi narrow sectio...

Gate-induced strain for MOS performance improvement

Methods of manufacturing a stressed MOS transistor structure

Method for improving transistor performance through reducing the sa...

Enhancing strained device performance by use of multi narrow sectio...

Integrated circuit with improved channel stress properties and a me...

Method for improving transistor performance through reducing the sa...

Increasing stress-enhanced drive current in a MOS transistor

Patents Applicationslast 30 patents

Method for improving transistor performance through reducing the sa...

Method for improving transistor performance through reducing the sa...

Method for improving transistor performance through reducing the sa...

Enhancing strained device performance by use of multi narrow sectio...

Short channel effect of MOS devices by retrograde well engineering...

Method for improving transistor performance through reducing the sa...

Enhancing strained device performance by use of multi narrow sectio...

Gate-induced strain for MOS performance improvement

METHOD FOR IMPROVING TRANSISTOR PERFORMANCE THROUGH REDUCING THE SA...

Methods of manufacturing a stressed MOS transistor structure

Gate-induced strain for MOS performance improvement

Integrated circuit with improved channel stress properties and a me...

Increasing stress-enhanced drive current in a MOS transistor