Thomas J. Haigh JR.

Person

Claverack, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nano multilayer carbon-rich low-k spacer
- Patent number 11,791,398
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Donald Canaperi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming high carbon content flowable dielectric film with low proce...
- Patent number 11,756,786
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer formation for nano-scale semiconductor devices
- Patent number 11,658,062
- Issue date May 23, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition with SAM for fully aligned via
- Patent number 11,171,054
- Issue date Nov 9, 2021
- International Business Machines Corporation
- Son Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallic interconnect structure
- Patent number 11,164,776
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Son Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano multilayer carbon-rich low-k spacer
- Patent number 10,937,892
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Donald Canaperi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer formation for nano-scale semiconductor devices
- Patent number 10,418,277
- Issue date Sep 17, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Robust high performance low hydrogen silicon carbon nitride (SiCNH)...
- Patent number 10,242,865
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Thomas J. Haigh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Robust high performance low hydrogen silicon carbon nitride (SiCNH)...
- Patent number 10,236,176
- Issue date Mar 19, 2019
- International Business Machines Corporation
- Thomas J. Haigh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Air gap spacer formation for nano-scale semiconductor devices
- Patent number 10,115,629
- Issue date Oct 30, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer formation for nano-scale semiconductor devices
- Patent number 9,892,961
- Issue date Feb 13, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Robust high performance low hydrogen silicon carbon nitride (SiCNH)...
- Patent number 9,735,005
- Issue date Aug 15, 2017
- International Business Machines Corporation
- Thomas J. Haigh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an interconnect structure
- Patent number 9,502,288
- Issue date Nov 22, 2016
- GLOBALFOUNDRIES Inc.
- Son Van Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure containing a porous low k interconnect diele...
- Patent number 9,312,224
- Issue date Apr 12, 2016
- International Business Machines Corporation
- Donald F. Canaperi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlevel dielectric stack for interconnect structures
- Patent number 9,105,642
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Griselda Bonilla
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Interlevel dielectric stack for interconnect structures
- Patent number 9,018,767
- Issue date Apr 28, 2015
- International Business Machines Corporation
- Griselda Bonilla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlevel dielectric stack for interconnect structures
- Patent number 8,779,600
- Issue date Jul 15, 2014
- International Business Machines Corporation
- Son Van Nguyen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
C-rich carbon boron nitride dielectric films for use in electronic...
- Patent number 8,652,950
- Issue date Feb 18, 2014
- International Business Machines Corporation
- Son Van Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to form an adhesion layer and multiphase ultra-low k dielec...
- Patent number 8,637,412
- Issue date Jan 28, 2014
- International Business Machines Corporation
- Alfred Grill
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Grant
Multilayered low k cap with conformal gap fill and UV stable compre...
- Patent number 8,536,069
- Issue date Sep 17, 2013
- International Business Machines Corporation
- Mihaela Balseanu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayered low k cap with conformal gap fill and UV stable compre...
- Patent number 8,492,880
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Mihaela Balseanu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
C-rich carbon boron nitride dielectric films for use in electronic...
- Patent number 8,476,743
- Issue date Jul 2, 2013
- International Business Machines Corporation
- Son Van Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered interconnect dielectric caps having compressive stress a...
- Patent number 8,362,596
- Issue date Jan 29, 2013
- International Business Machines Corporation
- Stephan A. Cohen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES
- Publication number 20240079266
- Publication date Mar 7, 2024
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DEPOSITION WITH SAM FOR FULLY ALIGNED VIA
- Publication number 20210313228
- Publication date Oct 7, 2021
- International Business Machines Corporation
- Son Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO MULTILAYER CARBON-RICH LOW-K SPACER
- Publication number 20210151579
- Publication date May 20, 2021
- International Business Machines Corporation
- Donald Canaperi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIC INTERCONNECT STRUCTURE
- Publication number 20210098292
- Publication date Apr 1, 2021
- International Business Machines Corporation
- Son Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING HIGH CARBON CONTENT FLOWABLE DIELECTRIC FILM WITH LOW PROCE...
- Publication number 20200234949
- Publication date Jul 23, 2020
- International Business Machines Corporation
- Benjamin D. Briggs
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NANO MULTILAYER CARBON-RICH LOW-K SPACER
- Publication number 20200083345
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Donald Canaperi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES
- Publication number 20190267279
- Publication date Aug 29, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROBUST HIGH PERFORMANCE LOW HYDROGEN SILICON CARBON NITRIDE (SiCNH)...
- Publication number 20190172704
- Publication date Jun 6, 2019
- International Business Machines Corporation
- Thomas J. Haigh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES
- Publication number 20180261494
- Publication date Sep 13, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES
- Publication number 20180047617
- Publication date Feb 15, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES
- Publication number 20180047615
- Publication date Feb 15, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROBUST HIGH PERFORMANCE LOW HYDROGEN SILICON CARBON NITRIDE (SiCNH)...
- Publication number 20170263449
- Publication date Sep 14, 2017
- International Business Machines Corporation
- Thomas J. Haigh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROBUST HIGH PERFORMANCE LOW HYDROGEN SILICON CARBON NITRIDE (SiCNH)...
- Publication number 20170263451
- Publication date Sep 14, 2017
- International Business Machines Corporation
- Thomas J. Haigh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTERLEVEL DIELECTRIC STACK FOR INTERCONNECT STRUCTURES
- Publication number 20140284815
- Publication date Sep 25, 2014
- International Business Machines Corporation
- Griselda Bonilla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERLEVEL DIELECTRIC STACK FOR INTERCONNECT STRUCTURES
- Publication number 20140256154
- Publication date Sep 11, 2014
- International Business Machines Corporation
- Griselda Bonilla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADHESION LAYER AND MULTIPHASE ULTRA-LOW k DIELECTRIC MATERIAL
- Publication number 20140203336
- Publication date Jul 24, 2014
- International Business Machines Corporation
- ALFRED GRILL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULATED COMPOSITIONAL AND STRESS CONTROLLED MULTILAYER ULTRATHIN...
- Publication number 20130333923
- Publication date Dec 19, 2013
- International Business Machines Corporation
- Mihaela Balseanu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Interlevel Dielectric Stack for Interconnect Structures
- Publication number 20130175697
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Son Van Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
C-RICH CARBON BORON NITRIDE DIELECTRIC FILMS FOR USE IN ELECTRONIC...
- Publication number 20130171839
- Publication date Jul 4, 2013
- International Business Machines Corporation
- Son Van Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
C-RICH CARBON BORON NITRIDE DIELECTRIC FILMS FOR USE IN ELECTRONIC...
- Publication number 20130062753
- Publication date Mar 14, 2013
- International Business Machines Corporation
- Son Van Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPHASE ULTRA LOW K DIELECTRIC MATERIAL
- Publication number 20130043514
- Publication date Feb 21, 2013
- International Business Machines Corporation
- Alfred Grill
- H01 - BASIC ELECTRIC ELEMENTS

Thomas J. Haigh JR.

Person

Patents Grantslast 30 patents

Nano multilayer carbon-rich low-k spacer

Forming high carbon content flowable dielectric film with low proce...

Air gap spacer formation for nano-scale semiconductor devices

Selective deposition with SAM for fully aligned via

Metallic interconnect structure

Nano multilayer carbon-rich low-k spacer

Air gap spacer formation for nano-scale semiconductor devices

Robust high performance low hydrogen silicon carbon nitride (SiCNH)...

Robust high performance low hydrogen silicon carbon nitride (SiCNH)...

Air gap spacer formation for nano-scale semiconductor devices

Air gap spacer formation for nano-scale semiconductor devices

Robust high performance low hydrogen silicon carbon nitride (SiCNH)...

Method of forming an interconnect structure

Interconnect structure containing a porous low k interconnect diele...

Interlevel dielectric stack for interconnect structures

Interlevel dielectric stack for interconnect structures

Interlevel dielectric stack for interconnect structures

C-rich carbon boron nitride dielectric films for use in electronic...

Process to form an adhesion layer and multiphase ultra-low k dielec...

Multilayered low k cap with conformal gap fill and UV stable compre...

Multilayered low k cap with conformal gap fill and UV stable compre...

C-rich carbon boron nitride dielectric films for use in electronic...

Engineered interconnect dielectric caps having compressive stress a...

Patents Applicationslast 30 patents

AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES

SELECTIVE DEPOSITION WITH SAM FOR FULLY ALIGNED VIA

NANO MULTILAYER CARBON-RICH LOW-K SPACER

METALLIC INTERCONNECT STRUCTURE

FORMING HIGH CARBON CONTENT FLOWABLE DIELECTRIC FILM WITH LOW PROCE...

NANO MULTILAYER CARBON-RICH LOW-K SPACER

AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES

ROBUST HIGH PERFORMANCE LOW HYDROGEN SILICON CARBON NITRIDE (SiCNH)...

AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES

AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES

AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES

ROBUST HIGH PERFORMANCE LOW HYDROGEN SILICON CARBON NITRIDE (SiCNH)...

ROBUST HIGH PERFORMANCE LOW HYDROGEN SILICON CARBON NITRIDE (SiCNH)...

INTERLEVEL DIELECTRIC STACK FOR INTERCONNECT STRUCTURES

INTERLEVEL DIELECTRIC STACK FOR INTERCONNECT STRUCTURES

ADHESION LAYER AND MULTIPHASE ULTRA-LOW k DIELECTRIC MATERIAL

MODULATED COMPOSITIONAL AND STRESS CONTROLLED MULTILAYER ULTRATHIN...

Interlevel Dielectric Stack for Interconnect Structures

C-RICH CARBON BORON NITRIDE DIELECTRIC FILMS FOR USE IN ELECTRONIC...

C-RICH CARBON BORON NITRIDE DIELECTRIC FILMS FOR USE IN ELECTRONIC...

MULTIPHASE ULTRA LOW K DIELECTRIC MATERIAL