Thomas N. Adam

Person

Slingerlands, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated photonics including waveguiding material
- Patent number 11,703,643
- Issue date Jul 18, 2023
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Integrated photonics including germanium
- Patent number 10,830,952
- Issue date Nov 10, 2020
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- G02 - OPTICS
Information Patent Grant
Integrated photonics including waveguiding material
- Patent number 10,571,631
- Issue date Feb 25, 2020
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Integrated photonics including germanium
- Patent number 10,295,745
- Issue date May 21, 2019
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- G02 - OPTICS
Information Patent Grant
Integrated photonics including germanium
- Patent number 9,864,138
- Issue date Jan 9, 2018
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- G02 - OPTICS
Information Patent Grant
Semiconductor device including embedded crystalline back-gate bias...
- Patent number 9,728,649
- Issue date Aug 8, 2017
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with varying threshold voltages
- Patent number 9,673,196
- Issue date Jun 6, 2017
- GLOBALFOUNDRIES, INC.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a source and a drain with reverse fa...
- Patent number 9,673,296
- Issue date Jun 6, 2017
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having an epitaxially grown semiconductor on the fin in the...
- Patent number 9,530,843
- Issue date Dec 27, 2016
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of bulk SiGe fin with dielectric isolation by anodization
- Patent number 9,508,851
- Issue date Nov 29, 2016
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to reduce crystal defects in epitaxial fin mer...
- Patent number 9,496,282
- Issue date Nov 15, 2016
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to reduce crystal defects in epitaxial fin mer...
- Patent number 9,472,576
- Issue date Oct 18, 2016
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-conductor device with epitaxial source/drain facetting provide...
- Patent number 9,437,679
- Issue date Sep 6, 2016
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated passive devices for finFET technologies
- Patent number 9,406,665
- Issue date Aug 2, 2016
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk semiconductor fins with self-aligned shallow trench isolation...
- Patent number 9,406,545
- Issue date Aug 2, 2016
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-fin finFETs with merged-fin source/drains and replacement gates
- Patent number 9,401,373
- Issue date Jul 26, 2016
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device structure with increased contact area and reduced gate capac...
- Patent number 9,385,231
- Issue date Jul 5, 2016
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial semiconductor resistor with semiconductor structures on s...
- Patent number 9,373,637
- Issue date Jun 21, 2016
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a FinFET device using a sacrificial epitaxy...
- Patent number 9,362,310
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and method of fabrication
- Patent number 9,362,309
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with aspect ratio trapping capabilities
- Patent number 9,330,908
- Issue date May 3, 2016
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to reduce crystal defects in epitaxial fin mer...
- Patent number 9,312,273
- Issue date Apr 12, 2016
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device including embedded cry...
- Patent number 9,281,198
- Issue date Mar 8, 2016
- GLOBALFOUNDRIES, INC.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with crystalline insulator
- Patent number 9,257,536
- Issue date Feb 9, 2016
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compressive strained III-V complementary metal oxide semiconductor...
- Patent number 9,236,463
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having fin structures, and methods of forming...
- Patent number 9,219,139
- Issue date Dec 22, 2015
- GLOBALFOUNDRIES Inc.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with improved sigma-shaped embedded stressor and method...
- Patent number 9,202,689
- Issue date Dec 1, 2015
- International Business Machines Corporation
- Thomas N Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a source and a drain with reverse fa...
- Patent number 9,190,471
- Issue date Nov 17, 2015
- GlobalFoundries U.S. 2 LLC
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Prevention of fin erosion for semiconductor devices
- Patent number 9,190,487
- Issue date Nov 17, 2015
- GLOBALFOUNDRIES Inc.
- Ali Khakifirooz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin hetereostructure channel device
- Patent number 9,093,260
- Issue date Jul 28, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED PHOTONICS INCLUDING WAVEGUIDING MATERIAL
- Publication number 20200158954
- Publication date May 21, 2020
- Douglas Coolbaugh
- G02 - OPTICS
Information Patent Application
INTEGRATED PHOTONICS INCLUDING GERMANIUM
- Publication number 20200026003
- Publication date Jan 23, 2020
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PHOTONICS INCLUDING GERMANIUM
- Publication number 20190025513
- Publication date Jan 24, 2019
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS
- Publication number 20170229450
- Publication date Aug 10, 2017
- GLOBALFOUNDRIES INC.
- Thomas N. ADAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PHOTONICS INCLUDING WAVEGUIDING MATERIAL
- Publication number 20160223749
- Publication date Aug 4, 2016
- Douglas Coolbaugh
- G02 - OPTICS
Information Patent Application
INTEGRATED PHOTONICS INCLUDING GERMANIUM
- Publication number 20160197111
- Publication date Jul 7, 2016
- Douglas Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING EMBEDDED CRYSTALLINE BACK-GATE BIAS...
- Publication number 20160163879
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING A SOURCE AND A DRAIN WITH REVERSE FA...
- Publication number 20160064523
- Publication date Mar 3, 2016
- GLOBALFOUNDRIES INC.
- Thomas N. ADAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO REDUCE CRYSTAL DEFECTS IN EPITAXIAL FIN MER...
- Publication number 20150348995
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED CHANNEL FOR DEPLETED CHANNEL SEMICONDUCTOR DEVICES
- Publication number 20150279936
- Publication date Oct 1, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK SEMICONDUCTOR FINS WITH SELF-ALIGNED SHALLOW TRENCH ISOLATION...
- Publication number 20150279723
- Publication date Oct 1, 2015
- International Business Machines Corporation
- THOMAS N. ADAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A FinFET DEVICE USING A SACRIFICIAL EPITAXY...
- Publication number 20150228671
- Publication date Aug 13, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PASSIVE DEVICES FOR FINFET TECHNOLOGIES
- Publication number 20150221631
- Publication date Aug 6, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FIN FINFETS WITH MERGED-FIN SOURCE/DRAINS AND REPLACEMENT GATES
- Publication number 20150187815
- Publication date Jul 2, 2015
- International Business Machines Corporation
- THOMAS N. ADAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO REDUCE CRYSTAL DEFECTS IN EPITAXIAL FIN MER...
- Publication number 20150155307
- Publication date Jun 4, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE WITH MULTIPLE SiGe REGIONS HAVING DIFFERENT...
- Publication number 20150155301
- Publication date Jun 4, 2015
- International Business Machines Corporation
- THOMAS N. ADAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO REDUCE CRYSTAL DEFECTS IN EPITAXIAL FIN MER...
- Publication number 20150155306
- Publication date Jun 4, 2015
- INTERNATIONAL BUSINESS MACHINES CORPPORATION
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH VARYING THRESHOLD VOLTAGES
- Publication number 20150145063
- Publication date May 28, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALO REGION FORMATION BY EPITAXIAL GROWTH
- Publication number 20150145033
- Publication date May 28, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MERGED FIN FINFET WITH (100) SIDEWALL SURFACES AND METHOD OF MAKING...
- Publication number 20150102428
- Publication date Apr 16, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Raised Source/Drain and Gate Portion with Dielectric Spacer or Air...
- Publication number 20150087120
- Publication date Mar 26, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FIN FINFETS WITH MERGED-FIN SOURCE/DRAINS AND REPLACEMENT GATES
- Publication number 20150084101
- Publication date Mar 26, 2015
- International Business Machines Corporation
- THOMAS N. ADAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE STRUCTURE WITH INCREASED CONTACT AREA AND REDUCED GATE CAPAC...
- Publication number 20150060944
- Publication date Mar 5, 2015
- International Business Machines Corporation
- THOMAS N. ADAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMI-CONDUCTOR DEVICE WITH EPITAXIAL SOURCE/DRAIN FACETTING PROVIDE...
- Publication number 20150061021
- Publication date Mar 5, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND METHOD OF FABRICATION
- Publication number 20150056792
- Publication date Feb 26, 2015
- Intemational Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SEMICONDUCTOR RESISTOR WITH SEMICONDUCTOR STRUCTURES ON...
- Publication number 20150054081
- Publication date Feb 26, 2015
- International Business Machines Corporation
- THOMAS N. ADAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A FinFET DEVICE USING A SACRIFICIAL EPITAXY...
- Publication number 20150041908
- Publication date Feb 12, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ASPECT RATIO TRAPPING CAPABILITIES
- Publication number 20140374796
- Publication date Dec 25, 2014
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ALLOY FIN FIELD EFFECT TRANSISTOR
- Publication number 20140361314
- Publication date Dec 11, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALO REGION FORMATION BY EPITAXIAL GROWTH
- Publication number 20140353732
- Publication date Dec 4, 2014
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS

Thomas N. Adam

Person

Patents Grantslast 30 patents

Integrated photonics including waveguiding material

Integrated photonics including germanium

Integrated photonics including waveguiding material

Integrated photonics including germanium

Integrated photonics including germanium

Semiconductor device including embedded crystalline back-gate bias...

Field effect transistors with varying threshold voltages

Semiconductor structure having a source and a drain with reverse fa...

FinFET having an epitaxially grown semiconductor on the fin in the...

Formation of bulk SiGe fin with dielectric isolation by anodization

Structure and method to reduce crystal defects in epitaxial fin mer...

Structure and method to reduce crystal defects in epitaxial fin mer...

Semi-conductor device with epitaxial source/drain facetting provide...

Integrated passive devices for finFET technologies

Bulk semiconductor fins with self-aligned shallow trench isolation...

Multi-fin finFETs with merged-fin source/drains and replacement gates

Device structure with increased contact area and reduced gate capac...

Epitaxial semiconductor resistor with semiconductor structures on s...

Method of manufacturing a FinFET device using a sacrificial epitaxy...

FinFET and method of fabrication

Semiconductor structure with aspect ratio trapping capabilities

Structure and method to reduce crystal defects in epitaxial fin mer...

Method of fabricating a semiconductor device including embedded cry...

FinFET with crystalline insulator

Compressive strained III-V complementary metal oxide semiconductor...

Semiconductor devices having fin structures, and methods of forming...

Transistor with improved sigma-shaped embedded stressor and method...

Semiconductor structure having a source and a drain with reverse fa...

Prevention of fin erosion for semiconductor devices

Thin hetereostructure channel device

Patents Applicationslast 30 patents

INTEGRATED PHOTONICS INCLUDING WAVEGUIDING MATERIAL

INTEGRATED PHOTONICS INCLUDING GERMANIUM

INTEGRATED PHOTONICS INCLUDING GERMANIUM

FIELD EFFECT TRANSISTORS

INTEGRATED PHOTONICS INCLUDING WAVEGUIDING MATERIAL

INTEGRATED PHOTONICS INCLUDING GERMANIUM

SEMICONDUCTOR DEVICE INCLUDING EMBEDDED CRYSTALLINE BACK-GATE BIAS...

SEMICONDUCTOR STRUCTURE HAVING A SOURCE AND A DRAIN WITH REVERSE FA...

STRUCTURE AND METHOD TO REDUCE CRYSTAL DEFECTS IN EPITAXIAL FIN MER...

STRAINED CHANNEL FOR DEPLETED CHANNEL SEMICONDUCTOR DEVICES

BULK SEMICONDUCTOR FINS WITH SELF-ALIGNED SHALLOW TRENCH ISOLATION...

METHOD OF MANUFACTURING A FinFET DEVICE USING A SACRIFICIAL EPITAXY...

INTEGRATED PASSIVE DEVICES FOR FINFET TECHNOLOGIES

MULTI-FIN FINFETS WITH MERGED-FIN SOURCE/DRAINS AND REPLACEMENT GATES

STRUCTURE AND METHOD TO REDUCE CRYSTAL DEFECTS IN EPITAXIAL FIN MER...

SEMICONDUCTOR SUBSTRATE WITH MULTIPLE SiGe REGIONS HAVING DIFFERENT...

STRUCTURE AND METHOD TO REDUCE CRYSTAL DEFECTS IN EPITAXIAL FIN MER...

FIELD EFFECT TRANSISTORS WITH VARYING THRESHOLD VOLTAGES

HALO REGION FORMATION BY EPITAXIAL GROWTH

MERGED FIN FINFET WITH (100) SIDEWALL SURFACES AND METHOD OF MAKING...

Raised Source/Drain and Gate Portion with Dielectric Spacer or Air...

MULTI-FIN FINFETS WITH MERGED-FIN SOURCE/DRAINS AND REPLACEMENT GATES

DEVICE STRUCTURE WITH INCREASED CONTACT AREA AND REDUCED GATE CAPAC...

SEMI-CONDUCTOR DEVICE WITH EPITAXIAL SOURCE/DRAIN FACETTING PROVIDE...

FINFET AND METHOD OF FABRICATION

EPITAXIAL SEMICONDUCTOR RESISTOR WITH SEMICONDUCTOR STRUCTURES ON...

METHOD OF MANUFACTURING A FinFET DEVICE USING A SACRIFICIAL EPITAXY...

SEMICONDUCTOR STRUCTURE WITH ASPECT RATIO TRAPPING CAPABILITIES

SEMICONDUCTOR ALLOY FIN FIELD EFFECT TRANSISTOR

HALO REGION FORMATION BY EPITAXIAL GROWTH