Thomas R. Prunty

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 10,854,727
- Issue date Dec 1, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 10,566,439
- Issue date Feb 18, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 10,347,736
- Issue date Jul 9, 2019
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for in-situ etch and regrowth in gallium nitride...
- Patent number 10,319,829
- Issue date Jun 11, 2019
- NEXGEN POWER SYSTEMS, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a merged P-N junction and schottky diode with...
- Patent number 9,525,039
- Issue date Dec 20, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral GaN JFET with vertical drift region
- Patent number 9,472,684
- Issue date Oct 18, 2016
- Avogy, Inc.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based Schottky barrier diode with algan surface layer
- Patent number 9,450,112
- Issue date Sep 20, 2016
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 9,368,582
- Issue date Jun 14, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination by ion implantation in gallium nitride
- Patent number 9,330,918
- Issue date May 3, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GaN vertical JFET utilizing a regrown channel
- Patent number 9,324,844
- Issue date Apr 26, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for diffusion and implantation in gallium nitride...
- Patent number 9,318,331
- Issue date Apr 19, 2016
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for doping control in gallium nitride based devices
- Patent number 9,287,389
- Issue date Mar 15, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for floating guard rings in gallium nitride mater...
- Patent number 9,224,828
- Issue date Dec 29, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode with buried layer in GaN materials
- Patent number 9,196,679
- Issue date Nov 24, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GAN vertical JFET utilizing a regrown gate
- Patent number 9,184,305
- Issue date Nov 10, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated vertical JFET and Schottky diode
- Patent number 9,171,937
- Issue date Oct 27, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for fabricating floating guard rings in GaN mater...
- Patent number 9,171,751
- Issue date Oct 27, 2015
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride merged P-i-N Schottky (MPS)...
- Patent number 9,171,923
- Issue date Oct 27, 2015
- Avogy, Inc.
- Andrew P. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum gallium nitride etch stop layer for gallium nitride based...
- Patent number 9,159,784
- Issue date Oct 13, 2015
- Avogy, Inc.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a merged P-N junction and schottky diode with...
- Patent number 9,159,799
- Issue date Oct 13, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for formation of P-N junctions in gallium nitride...
- Patent number 9,136,116
- Issue date Sep 15, 2015
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for in-situ etch and regrowth in gallium nitride...
- Patent number 9,123,533
- Issue date Sep 1, 2015
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for local control of defect density in gallium ni...
- Patent number 9,093,395
- Issue date Jul 28, 2015
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum gallium nitride etch stop layer for gallium nitride based...
- Patent number 9,093,284
- Issue date Jul 28, 2015
- Avogy, Inc.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a gallium nitride vertical transistor
- Patent number 9,059,199
- Issue date Jun 16, 2015
- Avogy, Inc.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GaN vertical JFET utilizing a regrown channel
- Patent number 8,969,912
- Issue date Mar 3, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for doping control in gallium nitride based devices
- Patent number 8,946,788
- Issue date Feb 3, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated vertical JFET and Schottky diode
- Patent number 8,941,117
- Issue date Jan 27, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode with buried layer in GaN materials
- Patent number 8,933,532
- Issue date Jan 13, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination by ion implantation in GaN
- Patent number 8,927,999
- Issue date Jan 6, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20200273965
- Publication date Aug 27, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20190348522
- Publication date Nov 14, 2019
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...
- Publication number 20180190789
- Publication date Jul 5, 2018
- Nexgen Power Systems, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20180166556
- Publication date Jun 14, 2018
- Nexgen Power Systems, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20170133481
- Publication date May 11, 2017
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...
- Publication number 20160190276
- Publication date Jun 30, 2016
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE
- Publication number 20160190351
- Publication date Jun 30, 2016
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...
- Publication number 20160190296
- Publication date Jun 30, 2016
- AVOGY, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...
- Publication number 20160043182
- Publication date Feb 11, 2016
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
- Publication number 20160043198
- Publication date Feb 11, 2016
- AVOGY, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...
- Publication number 20160005835
- Publication date Jan 7, 2016
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...
- Publication number 20150325677
- Publication date Nov 12, 2015
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR
- Publication number 20150243758
- Publication date Aug 27, 2015
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION BY ION IMPLANTATION IN GALLIUM NITRIDE
- Publication number 20150200097
- Publication date Jul 16, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
- Publication number 20150179733
- Publication date Jun 25, 2015
- AVOGY, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES
- Publication number 20150155372
- Publication date Jun 4, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE
- Publication number 20150140746
- Publication date May 21, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN CHANNEL
- Publication number 20150132899
- Publication date May 14, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20150123138
- Publication date May 7, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE...
- Publication number 20150017792
- Publication date Jan 15, 2015
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER
- Publication number 20140374769
- Publication date Dec 25, 2014
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...
- Publication number 20140312355
- Publication date Oct 23, 2014
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...
- Publication number 20140287570
- Publication date Sep 25, 2014
- Andrew P. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FABRICATING FLOATING GUARD RINGS IN GAN MATER...
- Publication number 20140235030
- Publication date Aug 21, 2014
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR
- Publication number 20140191242
- Publication date Jul 10, 2014
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE
- Publication number 20140159051
- Publication date Jun 12, 2014
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALUMINUM GALLIUM NITRIDE ETCH STOP LAYER FOR GALLIUM NITRIDE BASED...
- Publication number 20140162416
- Publication date Jun 12, 2014
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR GALLIUM NITRIDE VERTICAL JFET WITH SEPARATED...
- Publication number 20140145201
- Publication date May 29, 2014
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL GAN JFET WITH VERTICAL DRIFT REGION
- Publication number 20140131721
- Publication date May 15, 2014
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASE...
- Publication number 20140116328
- Publication date May 1, 2014
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS

Thomas R. Prunty

Person

Patents Grantslast 30 patents

High power gallium nitride electronics using miscut substrates

High power gallium nitride electronics using miscut substrates

High power gallium nitride electronics using miscut substrates

Method and system for in-situ etch and regrowth in gallium nitride...

Method of fabricating a merged P-N junction and schottky diode with...

Lateral GaN JFET with vertical drift region

GaN-based Schottky barrier diode with algan surface layer

High power gallium nitride electronics using miscut substrates

Edge termination by ion implantation in gallium nitride

Method and system for a GaN vertical JFET utilizing a regrown channel

Method and system for diffusion and implantation in gallium nitride...

Method and system for doping control in gallium nitride based devices

Method and system for floating guard rings in gallium nitride mater...

Schottky diode with buried layer in GaN materials

Method and system for a GAN vertical JFET utilizing a regrown gate

Monolithically integrated vertical JFET and Schottky diode

Method and system for fabricating floating guard rings in GaN mater...

Method of fabricating a gallium nitride merged P-i-N Schottky (MPS)...

Aluminum gallium nitride etch stop layer for gallium nitride based...

Method of fabricating a merged P-N junction and schottky diode with...

Method and system for formation of P-N junctions in gallium nitride...

Method and system for in-situ etch and regrowth in gallium nitride...

Method and system for local control of defect density in gallium ni...

Aluminum gallium nitride etch stop layer for gallium nitride based...

Method and system for a gallium nitride vertical transistor

Method and system for a GaN vertical JFET utilizing a regrown channel

Method and system for doping control in gallium nitride based devices

Monolithically integrated vertical JFET and Schottky diode

Schottky diode with buried layer in GaN materials

Edge termination by ion implantation in GaN

Patents Applicationslast 30 patents

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...

METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE

GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...

METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...

METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR

EDGE TERMINATION BY ION IMPLANTATION IN GALLIUM NITRIDE

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES

MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE

METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN CHANNEL

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE...

GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER

METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...

METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...

METHOD AND SYSTEM FOR FABRICATING FLOATING GUARD RINGS IN GAN MATER...

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR

MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE

ALUMINUM GALLIUM NITRIDE ETCH STOP LAYER FOR GALLIUM NITRIDE BASED...

METHOD AND SYSTEM FOR GALLIUM NITRIDE VERTICAL JFET WITH SEPARATED...

LATERAL GAN JFET WITH VERTICAL DRIFT REGION

METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASE...