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Thomas S. Rupp
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Patents Grants
last 30 patents
Information
Patent Grant
Semiconductor device including bonding pad metal layer structure
Patent number
12,183,696
Issue date
Dec 31, 2024
Infineon Technologies AG
Evelyn Napetschnig
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device including bonding pad metal layer structure
Patent number
11,764,176
Issue date
Sep 19, 2023
Infineon Technologies AG
Evelyn Napetschnig
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing a superjunction semiconductor device
Patent number
11,329,126
Issue date
May 10, 2022
Infineon Technologies Austria AG
Armin Tilke
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of reducing erosion of a nitride gate cap layer during react...
Patent number
6,960,523
Issue date
Nov 1, 2005
Infineon Technolgies AG
Michael Maldei
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Semiconductor Device Including Bonding Pad Metal Layer Structure
Publication number
20230395539
Publication date
Dec 7, 2023
INFINEON TECHNOLOGIES AG
Evelyn Napetschnig
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor Device Including Bonding Pad Metal Layer Structure
Publication number
20220059477
Publication date
Feb 24, 2022
INFINEON TECHNOLOGIES AG
Evelyn Napetschnig
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of Manufacturing a Superjunction Semiconductor Device
Publication number
20180374919
Publication date
Dec 27, 2018
Infineon Technologies Austria AG
Armin Tilke
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Trench capacitor with pillar
Publication number
20050048715
Publication date
Mar 3, 2005
Thomas Steffen Rupp
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method to improve bitline contact formation using a line mask
Publication number
20050014332
Publication date
Jan 20, 2005
Infineon Technologies North America Corp.
Michael Maldei
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of reducing erosion of a nitride gate cap layer during react...
Publication number
20040195607
Publication date
Oct 7, 2004
Infineon Technologies North America Corp.
Michael Maldei
H01 - BASIC ELECTRIC ELEMENTS