Thomas Schulz

Person

Munchen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor with a fin structure
- Patent number 7,646,046
- Issue date Jan 12, 2010
- Infineon Technologies AG
- Christian Russ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a vertical semiconductor transistor component...
- Patent number 6,909,141
- Issue date Jun 21, 2005
- Infineon Technologies AG
- Wolfgang Rösner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM memory cell, memory cell arrangement and method for fabricatin...
- Patent number 6,882,007
- Issue date Apr 19, 2005
- Infineon Technologies AG
- Erhard Landgraf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate MOSFET transistor and method for the production thereof
- Patent number 6,864,129
- Issue date Mar 8, 2005
- Infineon Technologies AG
- Lothar Risch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory cell and method for fabricating th...
- Patent number 6,614,069
- Issue date Sep 2, 2003
- Infineon Technologies AG
- Wolfgang Rösner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gated transistor
- Patent number 6,503,784
- Issue date Jan 7, 2003
- Infineon Technologies Richmond, LP
- Gerhard Enders
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random access memory (SRAM)
- Patent number 6,472,767
- Issue date Oct 29, 2002
- Infineon Technologies AG
- Gerhard Enders
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gated transistor
- Patent number 6,459,123
- Issue date Oct 1, 2002
- Infineon Technologies Richmond, LP
- Gerhard Enders
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM cell circuit
- Patent number 6,362,502
- Issue date Mar 26, 2002
- Infineon Technologies AG
- Wolfgang Rösner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a vertical MOS transistor
- Patent number 6,337,247
- Issue date Jan 8, 2002
- Infineon Technologies AG
- Thomas Schulz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit arrangement with at least four transistors, and method for...
- Patent number 6,060,911
- Issue date May 9, 2000
- Siemens Aktiengesellschaft
- Thomas Schulz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell configuration and method for its fabrication
- Patent number 6,038,164
- Issue date Mar 14, 2000
- Siemens Aktiengesellschaft
- Thomas Schulz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Vertical integrated component, component arrangement and method for...
- Publication number 20060128088
- Publication date Jun 15, 2006
- Andrew Graham
- B82 - NANO-TECHNOLOGY
Information Patent Application
Fin field-effect transistor and method for producing a fin field ef...
- Publication number 20040217408
- Publication date Nov 4, 2004
- Infineon Technologies AG
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterostructure component
- Publication number 20040214786
- Publication date Oct 28, 2004
- Franz Hofmann
- B82 - NANO-TECHNOLOGY
Information Patent Application
SRAM memory cell, memory cell arrangement and method for fabricatin...
- Publication number 20040099902
- Publication date May 27, 2004
- Erhard Landgraf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile semiconductor memory cell and method for fabricating th...
- Publication number 20020125525
- Publication date Sep 12, 2002
- Wolfgang Rosner
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for producing a vertical semiconductor transistor component...
- Publication number 20020121662
- Publication date Sep 5, 2002
- Wolfgang Rosner
- B82 - NANO-TECHNOLOGY
Information Patent Application
Optoelectronic microelectronic system
- Publication number 20020110329
- Publication date Aug 15, 2002
- Thomas Schulz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double gate MOSFET transistor and method for the production thereof
- Publication number 20020081791
- Publication date Jun 27, 2002
- Lothar Risch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing a vertical MOS transistor
- Publication number 20010024858
- Publication date Sep 27, 2001
- Infineon Technologies AG
- Thomas Schulz
- H01 - BASIC ELECTRIC ELEMENTS

Thomas Schulz

Person

Patents Grantslast 30 patents

Field effect transistor with a fin structure

Method for producing a vertical semiconductor transistor component...

SRAM memory cell, memory cell arrangement and method for fabricatin...

Double gate MOSFET transistor and method for the production thereof

Nonvolatile semiconductor memory cell and method for fabricating th...

Double gated transistor

Static random access memory (SRAM)

Double gated transistor

DRAM cell circuit

Method of producing a vertical MOS transistor

Circuit arrangement with at least four transistors, and method for...

SRAM cell configuration and method for its fabrication

Patents Applicationslast 30 patents

Vertical integrated component, component arrangement and method for...

Fin field-effect transistor and method for producing a fin field ef...

Heterostructure component

SRAM memory cell, memory cell arrangement and method for fabricatin...

Nonvolatile semiconductor memory cell and method for fabricating th...

Method for producing a vertical semiconductor transistor component...

Optoelectronic microelectronic system

Double gate MOSFET transistor and method for the production thereof

Method for producing a vertical MOS transistor