Thomas T. Hwang

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Wappingers Falls, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Nitrided ultra thin gate dielectrics
- Patent number 7,109,559
- Issue date Sep 19, 2006
- International Business Machines Corporation
- Mukesh V. Khare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improved plasma nitridation of ultra thin gate dielectrics
- Patent number 6,893,979
- Issue date May 17, 2005
- International Business Machines Corporation
- Mukesh V. Khare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of disposable spacer to introduce gettering in SOI layer
- Patent number 6,635,517
- Issue date Oct 21, 2003
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Nitrided ultrathin gate dielectrics
- Publication number 20050087822
- Publication date Apr 28, 2005
- Mukesh V. Khare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of disposable spacer to introduce gettering in SOI layer
- Publication number 20030032251
- Publication date Feb 13, 2003
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for improved plasma nitridation of ultra thin gate dielectrics
- Publication number 20020130377
- Publication date Sep 19, 2002
- International Business Machines Corporation
- Mukesh V. Khare
- H01 - BASIC ELECTRIC ELEMENTS