Tim Baldauf

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Reconfigurable nanowire field effect transistor, a nanowire array a...
- Patent number 10,347,760
- Issue date Jul 9, 2019
- Technische Universitát Dresden
- Tim Baldauf
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods of forming a nanowire transistor device
- Patent number 9,484,407
- Issue date Nov 1, 2016
- GLOBALFOUNDRIES Inc.
- Tim Baldauf
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Strain engineering in three-dimensional transistors based on strain...
- Patent number 8,941,187
- Issue date Jan 27, 2015
- GLOBALFOUNDRIES Inc.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment in a fin transistor by corner implanta...
- Patent number 8,916,928
- Issue date Dec 23, 2014
- GLOBALFOUNDRIES Inc.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having protruding source and drain regions and...
- Patent number 8,912,606
- Issue date Dec 16, 2014
- GLOBALFOUNDRIES Inc.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure including a vertical na...
- Patent number 8,835,255
- Issue date Sep 16, 2014
- GLOBALFOUNDRIES Inc.
- Tim Baldauf
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Threshold voltage adjustment in a Fin transistor by corner implanta...
- Patent number 8,580,643
- Issue date Nov 12, 2013
- GLOBALFOUNDRIES Inc.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RECONFIGURABLE NANOWIRE FIELD EFFECT TRANSISTOR, A NANOWIRE ARRAY A...
- Publication number 20180012996
- Publication date Jan 11, 2018
- Technische Universitat Dresden
- Tim BALDAUF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR DEVICE
- Publication number 20150129964
- Publication date May 14, 2015
- GLOBALFOUNDRIES INC.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A VERTICAL NA...
- Publication number 20140206157
- Publication date Jul 24, 2014
- GLOBALFOUNDRIES INC.
- Tim Baldauf
- B82 - NANO-TECHNOLOGY
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT IN A FIN TRANSISTOR BY CORNER IMPLANTA...
- Publication number 20140027825
- Publication date Jan 30, 2014
- GLOBALFOUNDRIES INC.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING PROTRUDING SOURCE AND DRAIN REGIONS AND...
- Publication number 20130277746
- Publication date Oct 24, 2013
- GLOBALFOUNDRIES INC.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain Engineering in Three-Dimensional Transistors Based on Strain...
- Publication number 20130181299
- Publication date Jul 18, 2013
- GLOBALFOUNDRIES INC.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Threshold Voltage Adjustment in a Fin Transistor by Corner Implanta...
- Publication number 20130049121
- Publication date Feb 28, 2013
- GLOBALFOUNDRIES INC.
- Tim Baldauf
- H01 - BASIC ELECTRIC ELEMENTS

Tim Baldauf

Person

Patents Grantslast 30 patents

Reconfigurable nanowire field effect transistor, a nanowire array a...

Methods of forming a nanowire transistor device

Strain engineering in three-dimensional transistors based on strain...

Threshold voltage adjustment in a fin transistor by corner implanta...

Integrated circuits having protruding source and drain regions and...

Method of forming a semiconductor structure including a vertical na...

Threshold voltage adjustment in a Fin transistor by corner implanta...

Patents Applicationslast 30 patents

RECONFIGURABLE NANOWIRE FIELD EFFECT TRANSISTOR, A NANOWIRE ARRAY A...

NANOWIRE TRANSISTOR DEVICE

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A VERTICAL NA...

THRESHOLD VOLTAGE ADJUSTMENT IN A FIN TRANSISTOR BY CORNER IMPLANTA...

INTEGRATED CIRCUITS HAVING PROTRUDING SOURCE AND DRAIN REGIONS AND...

Strain Engineering in Three-Dimensional Transistors Based on Strain...

Threshold Voltage Adjustment in a Fin Transistor by Corner Implanta...