Tim Minvielle

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional phase change memory arrays and methods of manufac...
- Patent number 10,249,683
- Issue date Apr 2, 2019
- SanDisk Technologies LLC
- Jeffrey S. Lille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming metal oxides and silicides in a memory device
- Patent number 9,343,673
- Issue date May 17, 2016
- Intermolecular, Inc.
- Dipankar Pramanik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device using a tunnel oxide layer and oxygen blo...
- Patent number 9,299,926
- Issue date Mar 29, 2016
- Intermolecular, Inc.
- Mihir Tendulkar
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive switching layers including Hf-Al-O
- Patent number 9,276,203
- Issue date Mar 1, 2016
- Intermolecular, Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level memory array having resistive elements for multi-bit da...
- Patent number 9,275,727
- Issue date Mar 1, 2016
- Intermolecular, Inc.
- Dipankar Pramanik
- G11 - INFORMATION STORAGE
Information Patent Grant
Atomic layer deposition of metal oxides for memory applications
- Patent number 9,246,096
- Issue date Jan 26, 2016
- Intermolecular, Inc.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory cell having three or more resistive...
- Patent number 9,178,148
- Issue date Nov 3, 2015
- Intermolecular, Inc.
- Imran Hashim
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory cells having shared electrodes with...
- Patent number 9,178,000
- Issue date Nov 3, 2015
- Intermolecular, Inc.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal oxide bilayers
- Patent number 9,087,978
- Issue date Jul 21, 2015
- Intermolecular, Inc.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Keyhole-free sloped heater for phase change memory
- Patent number 9,082,969
- Issue date Jul 14, 2015
- Micron Technology, Inc.
- Soonwoo Cha
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory cells having metal alloy current lim...
- Patent number 9,054,307
- Issue date Jun 9, 2015
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Plasma reduction method for modifying metal oxide stoichiometry in...
- Patent number 9,054,308
- Issue date Jun 9, 2015
- Sandisk 3D LLC
- Tong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of metal oxides for memory applications
- Patent number 9,006,026
- Issue date Apr 14, 2015
- Intermolecular, Inc.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory cell having three or more resistive...
- Patent number 9,001,554
- Issue date Apr 7, 2015
- Intermolecular, Inc.
- Imran Hashim
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level memory array having resistive elements for multi-bit da...
- Patent number 8,995,166
- Issue date Mar 31, 2015
- Intermolecular, Inc.
- Dipankar Pramanik
- G11 - INFORMATION STORAGE
Information Patent Grant
Transition metal oxide bilayers
- Patent number 8,987,697
- Issue date Mar 24, 2015
- Intermolecular, Inc.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sequential atomic layer deposition of electrodes and resistive swit...
- Patent number 8,980,766
- Issue date Mar 17, 2015
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell having an integrated two-terminal current limiting resi...
- Patent number 8,975,727
- Issue date Mar 10, 2015
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming metal oxides and silicides in a memory device
- Patent number 8,975,114
- Issue date Mar 10, 2015
- Intermolecular, Inc.
- Dipankar Pramanik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multifunctional electrode
- Patent number 8,906,736
- Issue date Dec 9, 2014
- Intermolecular, Inc.
- Hieu Pham
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Resistive random access memory access cells having thermally isolat...
- Patent number 8,890,109
- Issue date Nov 18, 2014
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multifunctional electrode
- Patent number 8,859,328
- Issue date Oct 14, 2014
- Intermolecular, Inc.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Limited maximum fields of electrode-switching layer interfaces in R...
- Patent number 8,860,002
- Issue date Oct 14, 2014
- Intermolecular, Inc.
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile resistive memory element with a metal nitride containin...
- Patent number 8,853,099
- Issue date Oct 7, 2014
- Intermolecular, Inc.
- Yun Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Carbon doped resistive switching layers
- Patent number 8,852,996
- Issue date Oct 7, 2014
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of metal oxides for memory applications
- Patent number 8,846,443
- Issue date Sep 30, 2014
- Intermolecular, Inc.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ReRAM stacks preparation by using single ALD or PVD chamber
- Patent number 8,846,484
- Issue date Sep 30, 2014
- Intermolecular, Inc.
- Albert Sanghyup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory cells having metal alloy current lim...
- Patent number 8,817,524
- Issue date Aug 26, 2014
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Radiation enhanced resistive switching layers
- Patent number 8,809,159
- Issue date Aug 19, 2014
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sequential atomic layer deposition of electrodes and resistive swit...
- Patent number 8,809,205
- Issue date Aug 19, 2014
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Multi-Level Memory Array Having Resistive Elements for Multi-Bit Da...
- Publication number 20150310910
- Publication date Oct 29, 2015
- INTERMOLECULAR INC.
- Dipankar Pramanik
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Random Access Memory Cells Having Shared Electrodes with...
- Publication number 20150311257
- Publication date Oct 29, 2015
- INTERMOLECULAR INC.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transition Metal Oxide Bilayers
- Publication number 20150200361
- Publication date Jul 16, 2015
- INTERMOLECULAR INC.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic Layer Deposition of Metal Oxides for Memory Applications
- Publication number 20150179935
- Publication date Jun 25, 2015
- INTERMOLECULAR INC.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Random Access Memory Cell Having Three or More Resistive...
- Publication number 20150171323
- Publication date Jun 18, 2015
- INTERMOLECULAR INC.
- Imran Hashim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Metal Oxides and Silicides in a Memory Device
- Publication number 20150123071
- Publication date May 7, 2015
- INTERMOLECULAR INC.
- Dipankar Pramanik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIFUNCTIONAL ELECTRODE
- Publication number 20140374240
- Publication date Dec 25, 2014
- Hieu Pham
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Atomic Layer Deposition of Metal Oxides for Memory Applications
- Publication number 20140363920
- Publication date Dec 11, 2014
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile Resistive Memory Element With A Metal Nitride Containin...
- Publication number 20140361235
- Publication date Dec 11, 2014
- Yun Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Sequential Atomic Layer Deposition of Electrodes and Resistive Swit...
- Publication number 20140319443
- Publication date Oct 30, 2014
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Random Access Memory Cells Having METAL ALLOY Current Lim...
- Publication number 20140315369
- Publication date Oct 23, 2014
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS AND APPARATUS FOR METAL OXIDE REVERSIBLE RESISTANCE-SWITCHI...
- Publication number 20140252298
- Publication date Sep 11, 2014
- SanDisk 3D LLC
- Yubao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIFUNCTIONAL ELECTRODE
- Publication number 20140224645
- Publication date Aug 14, 2014
- INTERMOLECULAR INC.
- Hieu Pham
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Transition Metal Oxide Bilayers
- Publication number 20140217348
- Publication date Aug 7, 2014
- INTERMOLECULAR INC.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Random Access Memory Cell Having Three or More Resistive...
- Publication number 20140192585
- Publication date Jul 10, 2014
- INTERMOLECULAR INC.
- Imran Hashim
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Level Memory Array Having Resistive Elements For Multi-Bit Da...
- Publication number 20140177315
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Dipankar Pramanik
- G11 - INFORMATION STORAGE
Information Patent Application
RADIATION ENHANCED RESISTIVE SWITCHING LAYERS
- Publication number 20140175364
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEQUENTIAL ATOMIC LAYER DEPOSITION OF ELECTRODES AND RESISTIVE SWIT...
- Publication number 20140175354
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Switching Layers Including Hf-Al-O
- Publication number 20140175361
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bilayered Oxide Structures for ReRAM Cells
- Publication number 20140175360
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming Nonvolatile Memory Elements By Diffusing Oxygen Into Electr...
- Publication number 20140175363
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Random Access Memory Access Cells Having Thermally Isolat...
- Publication number 20140175356
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Limited Maximum Fields of Electrode-Switching Layer Interfaces in R...
- Publication number 20140175362
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon Doped Resistive Switching Layers
- Publication number 20140175355
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Materials for Thin Resisive Switching Layers of Re-RAM Cells
- Publication number 20140175367
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Random Access Memory Cells Having METAL ALLOY Current Lim...
- Publication number 20140117303
- Publication date May 1, 2014
- INTERMOLECULAR INC.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Multifunctional Electrode
- Publication number 20140038380
- Publication date Feb 6, 2014
- Kabushiki Kaisha Toshiba
- Hieu Pham
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Nonvolatile Memory Device Using a Tunnel Nitride As A Current Limit...
- Publication number 20130337606
- Publication date Dec 19, 2013
- INTERMOLECULAR INC.
- Mihir Tendulkar
- G11 - INFORMATION STORAGE
Information Patent Application
Transition Metal Oxide Bilayers
- Publication number 20130334490
- Publication date Dec 19, 2013
- INTERMOLECULAR INC.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
KEYHOLE-FREE SLOPED HEATER FOR PHASE CHANGE MEMORY
- Publication number 20130286726
- Publication date Oct 31, 2013
- Soonwoo Cha
- G11 - INFORMATION STORAGE

Tim Minvielle

Person

Patents Grantslast 30 patents

Three-dimensional phase change memory arrays and methods of manufac...

Method for forming metal oxides and silicides in a memory device

Nonvolatile memory device using a tunnel oxide layer and oxygen blo...

Resistive switching layers including Hf-Al-O

Multi-level memory array having resistive elements for multi-bit da...

Atomic layer deposition of metal oxides for memory applications

Resistive random access memory cell having three or more resistive...

Resistive random access memory cells having shared electrodes with...

Transition metal oxide bilayers

Keyhole-free sloped heater for phase change memory

Resistive random access memory cells having metal alloy current lim...

Plasma reduction method for modifying metal oxide stoichiometry in...

Atomic layer deposition of metal oxides for memory applications

Resistive random access memory cell having three or more resistive...

Multi-level memory array having resistive elements for multi-bit da...

Transition metal oxide bilayers

Sequential atomic layer deposition of electrodes and resistive swit...

Memory cell having an integrated two-terminal current limiting resi...

Method for forming metal oxides and silicides in a memory device

Multifunctional electrode

Resistive random access memory access cells having thermally isolat...

Multifunctional electrode

Limited maximum fields of electrode-switching layer interfaces in R...

Nonvolatile resistive memory element with a metal nitride containin...

Carbon doped resistive switching layers

Atomic layer deposition of metal oxides for memory applications

ReRAM stacks preparation by using single ALD or PVD chamber

Resistive random access memory cells having metal alloy current lim...

Radiation enhanced resistive switching layers

Sequential atomic layer deposition of electrodes and resistive swit...

Patents Applicationslast 30 patents

Multi-Level Memory Array Having Resistive Elements for Multi-Bit Da...

Resistive Random Access Memory Cells Having Shared Electrodes with...

Transition Metal Oxide Bilayers

Atomic Layer Deposition of Metal Oxides for Memory Applications

Resistive Random Access Memory Cell Having Three or More Resistive...

Method for Forming Metal Oxides and Silicides in a Memory Device

MULTIFUNCTIONAL ELECTRODE

Atomic Layer Deposition of Metal Oxides for Memory Applications

Nonvolatile Resistive Memory Element With A Metal Nitride Containin...

Sequential Atomic Layer Deposition of Electrodes and Resistive Swit...

Resistive Random Access Memory Cells Having METAL ALLOY Current Lim...

METHODS AND APPARATUS FOR METAL OXIDE REVERSIBLE RESISTANCE-SWITCHI...

MULTIFUNCTIONAL ELECTRODE

Transition Metal Oxide Bilayers

Resistive Random Access Memory Cell Having Three or More Resistive...

Multi-Level Memory Array Having Resistive Elements For Multi-Bit Da...

RADIATION ENHANCED RESISTIVE SWITCHING LAYERS

SEQUENTIAL ATOMIC LAYER DEPOSITION OF ELECTRODES AND RESISTIVE SWIT...

Resistive Switching Layers Including Hf-Al-O

Bilayered Oxide Structures for ReRAM Cells

Forming Nonvolatile Memory Elements By Diffusing Oxygen Into Electr...

Resistive Random Access Memory Access Cells Having Thermally Isolat...

Limited Maximum Fields of Electrode-Switching Layer Interfaces in R...

Carbon Doped Resistive Switching Layers

Materials for Thin Resisive Switching Layers of Re-RAM Cells

Resistive Random Access Memory Cells Having METAL ALLOY Current Lim...

Multifunctional Electrode

Nonvolatile Memory Device Using a Tunnel Nitride As A Current Limit...

Transition Metal Oxide Bilayers

KEYHOLE-FREE SLOPED HEATER FOR PHASE CHANGE MEMORY