Timothy S. Henderson

Person

Richardson, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a bipolar transistor
- Patent number 6,159,816
- Issue date Dec 12, 2000
- TriQuint Semiconductor Texas, Inc.
- Darrell G. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of dry etching InAlAs and InGaAs lattice matched to InP
- Patent number 5,616,213
- Issue date Apr 1, 1997
- Texas Instruments Incorporated
- Timothy S. Henderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor heterojunction bipolar transistor
- Patent number 5,569,944
- Issue date Oct 29, 1996
- Texas Instruments Incorporated
- Joseph B. Delaney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 5,552,617
- Issue date Sep 3, 1996
- Texas Instruments Incorporated
- Darrell G. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of dry etching InAlAs and InGaAs lattice matched to InP
- Patent number 5,474,652
- Issue date Dec 12, 1995
- Texas Instruments Incorporated
- Timothy S. Henderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce emitter-base leakage current in bipolar transistors
- Patent number 5,455,440
- Issue date Oct 3, 1995
- Texas Instruments Incorporated
- Timothy S. Henderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing bipolar transistor having reduced base-collect...
- Patent number 5,445,976
- Issue date Aug 29, 1995
- Texas Instruments Incorporated
- Timothy S. Henderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral complementary heterojunction bipolar transistor and process...
- Patent number 5,362,657
- Issue date Nov 8, 1994
- Texas Instruments Incorporated
- Timothy S. Henderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating GaInP/GaAs structures
- Patent number 5,330,932
- Issue date Jul 19, 1994
- Texas Instruments Incorporated
- William U. Liu
- H01 - BASIC ELECTRIC ELEMENTS

Timothy S. Henderson

Person

Patents Grantslast 30 patents

Method of fabricating a bipolar transistor

Method of dry etching InAlAs and InGaAs lattice matched to InP

Compound semiconductor heterojunction bipolar transistor

Bipolar transistor

Method of dry etching InAlAs and InGaAs lattice matched to InP

Method to reduce emitter-base leakage current in bipolar transistors

Method for producing bipolar transistor having reduced base-collect...

Lateral complementary heterojunction bipolar transistor and process...

Method for fabricating GaInP/GaAs structures